J/SST201 Series N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 Product Summary Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 –0.3 to –1.5 –40 0.5 0.2 J/SST202 –0.8 to –4 –40 1 0.9 J/SST204 –0.3 to –2 –25 0.5 0.2 Features Benefits Applications Full Performance from Low Voltage Power Supply: Down to 1.5 V Low Signal Loss/System Error High System Sensitivity High Quality Low-Level Signal Amplification High-Gain, Low-Noise Amplifiers Low-Current, Low-Voltage Battery-Powered Amplifiers Infrared Detector Amplifiers Ultra High Input Impedance Pre-Amplifiers Low Cutoff Voltage: J201 <1.5 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 A Description The J/SST201 series features low leakage, very low noise, and low cutoff voltage for use with low-level power supplies. The J/SST201 is excellent for battery powered equipment and low current amplifiers. For similar products in TO-206AA (TO-18) packaging, see the 2N4338/4339/4340/4341 data sheet. The J series, TO-226 (TO-92) plastic package, provides low cost, while the SST series, TO-236 (SOT-23) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-226AA (TO-92) TO-236 (SOT-23) 1 D D S 1 3 2 S G G 2 3 Top View Top View J201 J202 J204 SST201 (P1)* SST202 (P2)* SST204 (P4)* *Marking Code for TO-236 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70233. Applications information may also be obtained via FaxBack, request document #70595 and document #70599. Siliconix P-37995—Rev. D, 11-Aug-94 1 J/SST201 Series Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . –40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . –55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C Specificationsa Limits J/SST201 Parameter Typb Symbol Test Conditions Min V(BR)GSS IG = –1 A , VDS = 0 V –40 VGS(off) VDS = 15 V, ID = 10 nA –0.3 Max J/SST202 Min Max J/SST204d Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current IDSS IGSS VDS = 15 V, VGS = 0 V VGS = –20 V, VDS = 0 V TA = 125_C 0.2 –2 –40 –1.5 –0.8 1 0.9 –100 –25 –4 –0.3 4.5 0.2 –100 V –2 3 mA –100 pA –1 IG VDG = 10 V, ID = 0.1 mA –2 Drain Cutoff Current ID(off) VDS = 15 V, VGS = –5 V 2 Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 Common-Source Forward Transconductance gfs VDS = 15 V, VGS = 0 V f = 1 kHz Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en nA pA V Dynamic VDS = 15 V,, VGS = 0 V f = 1 MHz MH VDS = 10 V, VGS = 0 V f = 1 kHz 0.5 1 0.5 4.5 pF 1.3 nV⁄ √Hz 6 Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW 300 s duty cycle 3%. d. See 2N/SST5484 Series for J204 typical characteristic curves. 2 mS NPA NH Siliconix P-37995—Rev. D, 11-Aug-94 J/SST201 Series Typical Characteristics (25_C Unless Noted) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 4 6 3 gfs IDSS 4 2 2 1 0 1500 –1 –2 –3 –4 IG @ ID = 500 mA ID = 100 mA 1 nA TA = 125_C IGSS @ 125_C 100 pA ID = 500 mA 10 pA ID = 100 mA TA = 25_C 1 pA IGSS @ 25_C 0.1 pA 0 0 –5 0 15 VDG – Drain-Gate Voltage (V) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance vs. Drain Current 2 10 gos 1200 8 6 900 rDS 4 600 2 300 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz g fs – Forward Transconductance (mS) VGS(off) = –1.5 V 0 0 0 –1 –2 –3 –4 VDS = 10 V f = 1 kHz 1.6 TA = –55_C 1.2 25_C 0.8 125_C 0.4 0 –5 0.01 0.1 VGS(off) – Gate-Source Cutoff Voltage (V) 1 ID – Drain Current (mA) Output Characteristics Output Characteristics 400 2 VGS(off) = –0.7 V VGS(off) = –1.5 V VGS = 0 V 360 1.6 I D – Drain Current (mA) I D – Drain Current ( m A) 30 VGS(off) – Gate-Source Cutoff Voltage (V) g – Output Conductance ( mS) rDS(on) – Drain-Source On-Resistance ( W ) 10 nA I G – Gate Leakage (A) IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 8 Gate Leakage Current 5 g fs – Forward Transconductance (mS) I DSS – Saturation Drain Current (mA) 10 –0.1 V 240 –0.2 V 160 –0.3 V 80 VGS = 0 V 1.2 –0.3 V 0.8 –0.6 V 0.4 –0.4 V –0.5 V –0.9 V –1.2 V 0 0 0 4 8 12 16 VDS – Drain-Source Voltage (V) Siliconix P-37995—Rev. D, 11-Aug-94 20 0 4 8 12 16 20 VDS – Drain-Source Voltage (V) 3 J/SST201 Series Typical Characteristics (25_C Unless Noted) Transfer Characteristics VGS(off) = –1.5 V VDS = 10 V TA = –55_C 300 25_C 200 125_C 100 TA = –55_C 1.2 25_C 0.8 0.4 0 125_C 0 0 –0.1 –0.2 –0.3 –0.4 –0.5 0 –0.4 VGS – Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage VDS = 10 V f = 1 kHz 1.2 TA = –55_C 25_C 0.9 0.6 125_C 0.3 0 VGS(off) = –1.5 V –2 VDS = 10 V f = 1 kHz 3.2 2.4 TA = –55_C 25_C 1.6 0.8 125_C –0.1 –0.2 –0.3 –0.4 0 –0.5 VGS – Gate-Source Voltage (V) Circuit Voltage Gain vs. Drain Current 160 g fs R L AV + 1 ) R g L os 120 Assume VDD = 15 V, VDS = 5 V 10 V RL + I D 80 –0.4 –0.8 –1.2 –1.6 –2 VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current 2000 rDS(on) – Drain-Source On-Resistance ( W ) A V – Voltage Gain –1.6 0 0 VGS(off) = –0.7 V –1.5 V 40 0 1600 VGS(off) = –0.7 V 1200 800 –1.5 V 400 0 0.01 0.1 ID – Drain Current (mA) 4 –1.2 Transconductance vs. Gate-Source Voltage 4 g fs – Forward Transconductance (mS) g fs – Forward Transconductance (mS) VGS(off) = –0.7 V –0.8 VGS – Gate-Source Voltage (V) 1.5 200 VDS = 10 V 1.6 400 I D – Drain Current (mA) I D – Drain Current ( m A) VGS(off) = –0.7 V Transfer Characteristics 2 500 1 0.01 0.1 ID – Drain Current (mA) Siliconix P-37995—Rev. D, 11-Aug-94 1 J/SST201 Series Typical Characteristics (25_C Unless Noted) Common-Source Input Capacitance vs. Gate-Source Voltage 5 C rss – Reverse Feedback Capacitance (pF) 10 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage C iss – Input Capacitance (pF) f = 1 MHz 8 6 VDS = 0 V 4 10 V 2 0 f = 1 MHz 4 3 VDS = 0 V 2 1 10 V 0 0 –4 –8 –12 –16 –20 0 VGS – Gate-Source Voltage (V) 20 VDS = 10 V f = 1 kHz –12 –16 –20 Equivalent Input Noise Voltage vs. Frequency (nV / √ Hz) VDS = 10 V 2.4 1.8 16 ID @ 100 A 12 TA = –55_C e n – Noise Voltage g – Output Conductance ( S) VGS(off) = –1.5 V –8 VGS – Gate-Source Voltage (V) Output Conductance vs. Drain Current 3 –4 0.8 25_C 0.4 8 VGS = 0 V 4 125_C 0 0 0.01 0.1 1 10 100 ID – Drain Current (mA) VGS(off) = –0.7 V VGS(off) = –1.5 V VGS = 0 V 0.8 I D – Drain Current (mA) I D – Drain Current ( A) 100 k Output Characteristics 1.0 240 –0.1 180 –0.2 120 –0.3 –0.5 60 10 k f – Frequency (Hz) Output Characteristics 300 1k VGS = 0 V –0.3 0.6 0.4 –0.6 0.2 –0.4 –0.9 –1.2 0 0 0 0.1 0.2 0.3 0.4 VDS – Drain-Source Voltage (V) Siliconix P-37995—Rev. D, 11-Aug-94 0.5 0 0.2 0.4 0.6 1.0 0.8 VDS – Drain-Source Voltage (V) 5