ST13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CES Collector-Emitter Voltage (V BE = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitt er-Base Voltage o (I C = 0, IB = 0.75 A, t p < 10µs, Tj < 150 C) Collector Current IC I CM Collector Peak Current (tp < 5 ms) Value Uni t 700 V 400 V BV EBO V 1.5 A 3 A A Base Current 0.75 I BM Base Peak Current (t p < 5 ms) 1.5 A P t ot Total Dissipation at T c = 25 o C 40 W T stg St orage Temperature IB Tj August 2001 Max. Operating Junction T emperature -65 to 150 o C 150 o C 1/7 ST13003 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.12 89 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEV Parameter Test Cond ition s Min. Collector Cut-off Current (V BE = -1.5V) V CE = 700V V CE = 700V Emitter-Base Breakdown Voltage (I C = 0) I E = 10 mA 9 V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 10 mA L = 25 mH 400 BV EBO Typ . T j = 125 o C Max. Un it 1 5 mA mA 18 V V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 0.5 A IC = 1 A I C = 1.5 A I B = 0.1 A IB = 0.25 A I B = 0.5 A 0.5 1 3 V V V V BE(s at)∗ Base-Emitter Saturation Voltage I C = 0.5 A IC = 1 A I B = 0.1 A IB = 0.25 A 1 1.2 V V DC Current G ain I C = 0.5 A Group A Group B IC = 1 A V CE = 2 V IC = 1 A I B1 = 0.2 A T p = 25 µs V CC = 125 V I B2 = -0.2 A IC = 1 A V BE = -5 V V c la mp = 300 V I B1 = 0.2 A L = 50 mH h FE∗ tr ts tf RESISTIVE LO AD Rise Time Storage Time Fall Time ts INDUCTIVE LOAD Storage Time VCE = 2 V 8 15 5 20 35 25 1 4 0.7 0.8 µs µs µs µs ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % Note: Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. 2/7 ST13003 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 ST13003 Inductive Fall Time Reverse Biased SOA 4/7 Inductive Storage Time ST13003 Figure 1: Inductive Load Switching Test Circuits. 1) F ast electr onic switch 2) Non-inductive Resistor 3) F ast recovery rectifier Figure 2: Resistive Load Switching Test Circuits. 1) F ast electr onic switch 2) Non-inductive Resistor 5/7 ST13003 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.425 b 0.7 0.9 0.028 0.035 b1 0.40 0.65 0.015 0.025 C 2.4 2.7 0.094 0.106 c1 1.0 1.3 0.039 0.051 D 15.4 16.0 0.606 0.630 e 2.2 0.087 e3 4.4 0.173 F G 3.8 3 0.150 3.2 H 0.118 0.126 2.54 0.100 H2 2.15 0.084 I 1.27 0.05 O 0.3 0.011 V o 10 10o 1: Base 2: Collector 3: Emitter 0016114/B 6/7 ST13003 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7