STW26NM60 STU26NM60, STU26NM60I N-CHANNEL 600V - 0.125Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS(on) ID STW26NM60 STU26NM60 STU26NM60I 600 V 600 V 600 V < 0.135 Ω < 0.135 Ω < 0.135 Ω 30 A 26 A 26 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 1 TO-247 2 3 Max220 Max220I DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STW26NM60 W26NM60 TO-247 TUBE STU26NM60 U26NM60 Max220 TUBE STU26NM60I U26NM60I Max220I TUBE February 2002 1/11 STW26NM60, STU26NM60, STU26NM60I ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STW 26NM60 VDS VDGR VGS Unit STU26NM60 STU26NM60I Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuos) at TC = 25°C 30 26 26 (*) A ID A Drain Current (continuos) at TC = 100°C 18.9 16.38 16.38 (*) IDM (l ) Drain Current (pulsed) 120 104 104 (*) A PTOT Total Dissipation at TC = 25°C 313 192 73 W Derating Factor 2.5 1.54 0.58 W/°C VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) dv/dt (1) Peak Diode Recovery voltage slope Tj Tstg Operating Junction Temperature Storage Temperature 6000 V 15 V/ns -55 to 150 -55 to 150 °C °C ( l ) Pulse width limi ted by safe operating area (1) ISD ≤26A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-247 Max220 Max220I 0.4 0.65 1.7 °C/W Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 13 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 740 mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igss=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/11 STW26NM60, STU26NM60, STU26NM60I ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 10 100 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 13 A V(BR)DSS 600 3 V 4 5 V 0.125 0.135 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) C iss Coss Crss Parameter Test Conditions Forward Transconductance VDS = 15 V, ID = 13 A Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Min. 20 S 2900 900 40 pF pF pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 300V, I D = 13 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 35 22 Qg Qgs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, I D = 26 A, VGS = 10V 73 20 37 102 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Condition s Min. VDD = 480V, ID = 26 A, R G = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 14 20 40 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 26 A, V GS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 26 A, di/dt = 100A/µs VDD = 60V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Min. Typ. 560 9 32.5 Max. Unit 26 104 A A 1.5 V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/11 STW26NM60, STU26NM60, STU26NM60I Safe Operating Area For TO-247 Thermal Impedance For TO-247 Safe Operating Area For Max220 Thermal Impedance For Max220 Safe Operating Area For Max220I Thermal Impedance For Max220I 4/11 STW26NM60, STU26NM60, STU26NM60I Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 5/11 STW26NM60, STU26NM60, STU26NM60I Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics 6/11 Normalized On Resistance vs Temperature STW26NM60, STU26NM60, STU26NM60I Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/11 STW26NM60, STU26NM60, STU26NM60I TO-247 MECHANICAL DATA DIM. mm. MIN. MAX. MIN. A 4.85 5.15 0.19 0.20 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 0.05 TYP. F1 3 0.11 F2 2 0.07 MAX. F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13 G 10.90 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 L2 L3 18.50 14.20 0.17 0.72 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21 M 2 3 0.07 0.11 V 5º 5º V2 60º 60º Dia 8/11 TYP inch 3.55 3.65 0.14 0.143 STW26NM60, STU26NM60, STU26NM60I Max220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.2 2.4 0.087 0.094 A2 2.9 3.1 0.114 0.122 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 c 0.45 0.6 0.054 0.18 0.023 0.626 0.641 D 15.9 16.3 D1 9 9.35 0.354 0.368 D2 0.8 1.2 0.031 0.047 D3 2.8 3.2 0.110 0.126 e 2.44 2.64 0.096 0.104 E 10.05 10.35 0.396 0.407 L 13.2 13.6 0.520 0.535 L1 3 3.4 0.118 0.133 D1 D2 A1 A2 A C D3 b b2 b1 D e E L1 L P011R 9/11 STW26NM60, STU26NM60, STU26NM60I I-Max220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. 4.3 4.6 0.169 0.181 A1 2.6 2.75 0.102 0.108 A2 1.95 2.15 0.077 0.084 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.017 0.023 A TYP. inch TYP. MAX. D 15.9 16.3 0.626 0.641 D1 12.5 12.9 0.492 0.508 D2 0.6 1 0.023 0.039 D3 1.75 2.15 0.069 0.084 e 2.44 2.64 0.096 0.104 E 10.05 10.35 0.396 0.407 L 13.2 13.6 0.520 0.535 L1 3 3.4 0.118 0.133 P011S 10/11 STW26NM60, STU26NM60, STU26NM60I Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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