ETC TPV8100B_D

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by TPV8100B/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
The TPV8100B is designed for output stages in band IV and V TV transmitter
amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
Including double input and output matching networks, the TPV8100B
features high impedances. It can easily operate in a full 470 MHz to 860 MHz
bandwidth in a single and simple circuit.
ARCHIVE INFORMATION
• To be used class AB for TV band IV and V.
• Specified 28 Volts, 860 MHz Characteristics
Output Power = 125 Watts (peak sync.)
Output Power = 100 Watts (CW)
Minimum Gain = 8.5 dB
• Specified 32 Volts, 860 MHz Characteristics
Output Power = 150 Watts (peak sync.)
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CASE 398–03, STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Voltage
Rating
VCER
40
Vdc
Collector–Base Voltage
VCBO
65
Vdc
Emitter–Base Voltage
VEBO
4
Vdc
Collector–Current — Continuous
IC
12
Adc
Total Device Dissipation @ 25°C Case
Derate above 25°C
PD
215
1.25
Watts
W/°C
Operating Junction Temperature
TJ
200
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Symbol
Max
Unit
RθJC
0.8
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 10 mA, Rbe = 75 Ω)
V(BR)CER
30
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)EBO
4
—
—
Vdc
Collector–Base Breakdown Voltage
(IE = 20 mAdc)
V(BR)CBO
65
—
—
Vdc
ICER
—
—
10
mA
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Leakage
(VCE = 28 V, Rbe = 75 Ω)
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
(continued)
REV 6
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 1994
TPV8100B
1
ARCHIVE INFORMATION
150 W, 470–860 MHz
NPN SILICON
RF POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
hFE
30
—
120
—
Cob
—
44
—
pF
Common–Emitter Amplifier Power Gain
(VCC = 28 V, Pout = 100 W, ICQ = 2 x 50 mA, f = 860 MHz)
Gp
8.5
9.5
—
dB
Collector Efficiency
(VCC = 28 V, Pout = 100 W, IQ = 2 x 50 mA, f = 860 MHz)
η
55
58
—
%
Pout
100
110
—
W
Peak Output Power (synch.)
(VCC = 28 V, ICQ = 2 x 50 mA, f = 860 MHz)
Pout
125
135
—
W
Peak Output Power (synch.)
(VCC = 32 V, ICQ = 2 x 25 mA, f = 860 MHz)
Pout
150
160
—
W
Recommended Quiescent Current
ICQ
—
—
2 x 0.3
A
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 2 Adc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance (each side) (2)
(VCB = 28 V, IE = 0, f = 1 MHz)
FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL)
NOTE:
2. Value of “Cob” is that of die only. It is not measurable in TPV8100B because of internal matching network.
Ω
f
(MHz)
Zin
(Ohms)
ZOL*
(Ohms)
470
665
860
1.95 + j3.67
3.65 + j6.82
6.66 + j13.8
10.0 + j9.50
9.23 + j1.30
4.45 + j5.22
ZOL* = Conjugate of optimum load impedance into which
ZOL* = the device operates at a given output power,
ZOL* = voltage, current and frequency.
NOTE: Zin & ZOL* are given from base–to–base and
NOTE: collector–to–collector respectively.
Input and Output impedances with circuit tuned for maximum linearity @ VCC = 28 V / ICQ = 2 x 50 mA / Pout = 100 W
Figure 1. Series Equivalent Input/Output Impedances
TPV8100B
2
MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
Output Power @ 1 dB Compression (Pref = 25 W)
(VCC = 28 V, ICQ = 2 x 50 mA, f = 860 MHz)
ARCHIVE INFORMATION
FUNCTIONAL TESTS IN CW (SOUND)
!
Ω
0!
C1, C9 — Chip Capacitor 15 nF
C2, C10 — Chip Capacitor 100 nF
C3, C11 — Chip Capacitor 100 µF/40 V
C4 — Chip Capacitor 15 pF ATC 100A
C5 — Chip Capacitor 5.6 pF ATC 100A
C6 — Trimmer Capacitor 1–4 pF
C7 — Chip Capacitor 12 pF ATC 100B
C8 — Chip Capacitor 15 pF ATC 100A
C12 — Chip Capacitor 12 pF ATC 100A
L1, L3 — Coaxial Wire 25 Ω/85 Mils/40 mm
L2, L4 — Printed Board Inductance
R1, R2 — Chip Resistor 1 Ω 0805 5%
Figure 2. Test Circuit
TYPICAL CHARACTERISTICS
CW — WIDEBAND
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ARCHIVE INFORMATION
*12 +
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Figure 3. Power Gain versus Frequency
Figure 4. Collector Efficiency versus Frequency
MOTOROLA RF DEVICE DATA
TPV8100B
3
ARCHIVE INFORMATION
Ω
TYPICAL VIDEO CHARACTERISTICS @ f = 800 MHz
VCE = 28 V
$
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;-$ ;% 3 4;$ Figure 5. Peak Output Power versus Peak
Input Power
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Figure 6. Peak Output Power versus Peak
Input Power
TEST CONDITIONS:
DIFF. Gain, 10 Steps
Channel 61
VCE = 28 V
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$
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0$ 5,-
*12 +
/
% 3 4-
*12 +
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Figure 7. Gain versus Output Power
TPV8100B
4
MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
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ARCHIVE INFORMATION
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TYPICAL VIDEO CHARACTERISTICS @ f = 800 MHz
VCE = 32 V
$
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VCE = 32 V, ICQ = 2 x 25 mA
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Pout
Gain
25 W
50 W
100 W
120 W
130 W
140 W
150 W
160 W
10.6 dB
11.1 dB
11.3 dB
11.1 dB
11.0 dB
10.7 dB
10.5 dB
10.2 dB
(see curve on left)
Figure 8. Peak Output Power versus Peak
Input Power
TEST CONDITIONS:
DIFF. Gain, 10 Steps
Channel 61
VCE = 32 V
ICQ = 2 x 25 mA
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$
/
/
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*12 +
Figure 9. Differential Gain
MOTOROLA RF DEVICE DATA
TPV8100B
5
ARCHIVE INFORMATION
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ARCHIVE INFORMATION
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Figure 10. Components View
PACKAGE DIMENSIONS
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CASE 398–03
ISSUE C
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TPV8100B
6
◊
MOTOROLA RF DEVICE TPV8100B/D
DATA
*TPV8100B/D*