ETC XN01504

Composite Transistors
XN01504 (XN1504)
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of low frequency output
+0.2
2.8 -0.3
+0.25
0.65±0.15
1.45±0.1
3
0.65±0.15
1
2
0 to 0.1
2SD1915F × 2 elements
+0.1
+0.2
1.1 -0.1
●
0.8
■ Basic Part Number of Element
0.16 -0.06
+0.1
0.3 -0.05
0.95
+0.2
4
0.95
●
Two elements incorporated into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
2.9 -0.05
●
5
1.9±0.1
■
Features
1.5 -0.05
■ Absolute Maximum Ratings
Parameter
(Ta=25˚C)
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
VCEO
20
V
VEBO
25
V
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
IC
300
mA
ICP
500
mA
Total power dissipation
PT
300
mW
5
Overall Junction temperature
Tj
150
˚C
4
Tstg
–55 to +150
˚C
■ Electrical Characteristics
Parameter
0.4±0.2
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 5S
Peak collector current
Storage temperature
0.1 to 0.3
Internal Connection
3
Tr1
Tr2
1
2
(Ta=25˚C)
Symbol
Conditions
min
typ
max
VCEO
IC = 1mA, IB = 0
Collector cutoff current
ICBO
VCB = 50V, IE = 0
0.1
µA
Emitter cutoff current
IEBO
VEB = 25V, IC = 0
0.1
µA
Forward current transfer ratio
hFE
VCE = 2V, IC = 4mA
500
Forward current transfer hFE ratio
hFE (small/large)*1
VCE = 2V, IC = 4mA
0.5
Collector to emitter saturation voltage
VCE(sat)
IC = 30mA, IB = 3mA
Base to emitter voltage
VBE
VCE = 2V, IC = 4mA
0.6
Transition frequency
fT
VCB = 6V, IE = –4mA, f = 200MHz
80
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
ON Resistance
Ron*2
*1
Ratio between 2 elements
*2
Ron test circuit
20
Unit
Collector to emitter voltage
V
2500
0.99
0.1
V
MHz
7
1.0
V
pF
Ω
1kΩ
IB=1mA
VB
VV
VA
f=1kHz
V=0.3V
VB
✕1000(Ω)
Ron=
VA–VB
Note.) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
XN01504
PT — Ta
IC — VCE
500
IC — VBE
120
24
VCE=2V
200
100
0
IB=10µA
16
8µA
12
6µA
8
4µA
4
2µA
80
120
160
Ambient temperature Ta (˚C)
2
Ta=75˚C
25˚C
–25˚C
10
100
Collector current IC (mA)
Collector output capacitance Cob (pF)
f=1MHz
Ta=25˚C
16
12
8
4
0
10
10
0
12
0.2
100
Collector to base voltage VCB (V)
0.4
0.6
1600
Ta=75˚C
25˚C
–25˚C
800
400
1
1.0
fT — I E
1200
0
0.1
0.8
Base to emitter voltage VBE (V)
200
10
Collector current IC (mA)
Cob — VCB
1
8
VCB=6V
Ta=25˚C
VCE=2V
Forward current transfer ratio hFE
Collector to emitter saturation voltage VCE(sat) (V)
0.1
20
6
hFE — IC
1
1
4
2000
IC/IB=10
0.001
0.1
40
Collector to emitter voltage VCE (V)
VCE(sat) — IC
10
0.01
–25˚C
60
0
0
Transition frequency fT (MHz)
40
Ta=75˚C
80
20
0
0
2
Collector current IC (mA)
300
25˚C
100
20
400
Collector current IC (mA)
Total power dissipation PT (mW)
Ta=25˚C
100
160
120
80
40
0
–0.1
–1
–10
Emitter current IE (mA)
–100
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2001 MAR