ETC 2SA720R

Transistor
2SA0719, 2SA0720 (2SA719, 2SA720)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification and driver amplification
Complementary to 2SC1317 and 2SC1318
4.0±0.2
5.1±0.2
5.0±0.2
• Complementary pair with 2SC1317 and 2SC1318.
0.7±0.2
■ Features
12.9±0.5
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
2SA0719
Collector to
emitter voltage
2SA0719
Symbol
Rating
Unit
VCBO
−30
V
2.5+0.6
–0.2
−60
2SA0720
−25
VCEO
0.45+0.15
–0.1
0.45+0.15
–0.1
V
2.5+0.6
–0.2
1
2 3
2.3±0.2
Collector to
base voltage
−50
2SA0720
−5
Emitter to base voltage
VEBO
V
Peak collector current
ICP
−1
A
Collector current
IC
−500
mA
Collector power dissipation
PC
625
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Collector cutoff current
Collector to base
voltage
2SA0719
Collector to emitter
voltage
2SA0719
Conditions
ICBO
VCB = −20 V, IE = 0
VCBO
IC = −10 µA, IE = 0
VCEO
IC = −10 mA, IB = 0
VEBO
IE = −10 µA, IC = 0
−5
Typ
Max
Unit
− 0.1
µA
−30
V
−60
2SA0720
−25
V
−50
2SA0720
Emitter to base voltage
Min
V
VCE = −10 V, IC = −150 mA
85
hFE2
VCE = −10 V, IC = −500 mA
40
Collector to emitter saturation voltage
VCE(sat)
IC = −300 mA, IB = −30 mA
− 0.35
− 0.6
V
Base to emitter saturation voltage
VBE(sat)
IC = −300 mA, IB = −30 mA
−1.1
−1.5
V
VCB = −10 V, IE = 50 mA, f = 200 MHz
200
Forward current transfer ratio
hFE1
Transition frequency
*
fT
Collector output capacitance
VCB = −10 V, IE = 0, f = 1 MHz
Cob
340
6
MHz
15
pF
Note) *: hFE1 Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2002
SJC00002BED
1
2SA0719, 2SA0720
PC  Ta
IC  VCE
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
−600
400
300
−400
200
− 0.3 mA
− 0.2 mA
−200
100
20
40
60
0
80 100 120 140 160
Ambient temperature Ta (°C)
−2
0
−1
Ta = 75°C
25°C
−25°C
− 0.03
−100
Base to emitter saturation voltage VBE(sat) (V)
0
0
−2
−4
−10
25°C
Ta = −25°C
−1
−8
−10
hFE  IC
−30
−3
−6
Base current IB (mA)
600
IC / IB = 10
75°C
− 0.1
− 0.003
VCE = −10 V
500
400
300
Ta = 75°C
25°C
−25°C
200
100
− 0.03
− 0.001
−1
−3
−10
−30
−100 −300 −1 000
− 0.01
−1
Collector current IC (mA)
−3
−10
−30
fT  I E
200
160
120
80
40
3
10
30
Emitter current IE (mA)
100
Collector output capacitance Cob (pF)
VCB = −10 V
Ta = 25°C
40
30
20
10
−3
−10
−30
−100
Collector to base voltage VCB (V)
SJC00002BED
−3
−10
VCER  RBE
IE = 0
f = 1 MHz
Ta = 25°C
0
−1
−1
Collector current IC (A)
Cob  VCB
50
1
0
− 0.01 − 0.03 − 0.1 − 0.3
−100 −300 −1000
Collector current IC (mA)
240
Transition frequency fT (MHz)
−100
−12
− 0.3
− 0.01
2
−10
−200
−120
Collector to emitter voltage VCER (V)
Collector to emitter saturation voltage VCE(sat) (V)
−3
− 0.1
−8
−300
VBE(sat)  IC
IC / IB = 10
− 0.3
−6
−400
Collector to emitter voltage VCE (V)
VCE(sat)  IC
−10
−4
−500
Forward current transfer ratio hFE
0
− 0.1 mA
Collector current IC (mA)
−600
−800
500
VCE = −10 V
Ta = 25°C
−700
−1 000
600
0
−800
Ta = 25°C
Collector current IC (mA)
Collector power dissipation PC (mW)
700
0
IC  IB
−1 200
800
IC = −2 mA
Ta = 25°C
−100
−80
−60
2SA0720
−40
2SA0719
−20
0
1
3
10
30
100
300
1 000
Base to emitter resistance RBE (kΩ)
2SA0719, 2SA0720
ICEO  Ta
104
Area of safe operation (ASO)
−10
VCE = −10 V
Single pulse
Ta = 25°C
Collector current IC (mA)
−3
ICEO (Ta)
ICEO (Ta = 25°C)
103
102
ICP
IC
−1
t = 10 ms
t=1s
− 0.3
− 0.1
− 0.03
− 0.01
10
− 0.003
1
0
40
80
120
160
Ambient temperature Ta (°C)
200
− 0.001
− 0.1 − 0.3
−1
−3
−10
−30
−100
Collector to emitter voltage VCE (V)
SJC00002BED
3
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2001 MAR