Power Transistors 2SA0794, 2SA0794A (2SA794, 2SA794A) Silicon PNP epitaxial planar type Unit: mm For low-frequency output driver Complementary to 2SC1567 and 2SC1567A 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 ■ Absolute Maximum Ratings TC = 25°C 0.5±0.1 0.5±0.1 4.6±0.2 Parameter Collector to base voltage 2SA0794 Collector to emitter voltage 2SA0794 Symbol Rating Unit VCBO −100 V 1 2 −100 VCEO 1.76±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3 −120 2SA0794A 3.05±0.1 • High collector to emitter voltage VCEO • Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier • TO-126B package which requires no insulation plate for installation to the heat sink 11.0±0.5 ■ Features 16.0±1.0 3.8±0.3 φ 3.16±0.1 V −120 2SA0794A −5 Emitter to base voltage VEBO V Peak collector current ICP −1 A Collector current IC − 0.5 A Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Collector to emitter voltage Symbol 2SA0794 Conditions VCEO IC = −100 µA, IB = 0 VEBO IE = −1 µA, IC = 0 Typ Max Unit V −120 2SA0794A Emitter to base voltage Min −100 −5 V VCE = −10 V, IC = −150 mA 90 160 hFE2 VCE = −5 V, IC = −500 mA 50 100 Collector to emitter saturation voltage VCE(sat) IC = −500 mA, IB = −50 mA − 0.2 − 0.4 V Base to emitter saturation voltage VBE(sat) IC = −500 mA, IB = −50 mA − 0.85 −1.2 V Forward current transfer ratio Transition frequency hFE1 * fT Collector output capacitance Cob VCB = −10 V, IE = 50 mA, f = 200 MHz 120 VCB = −10 V, IE = 0, f = 1 MHz 20 220 MHz 30 pF Note) *: Rank classification Rank Q R hFE1 90 to 155 130 to 220 Note.) The Part numbers in the Parenthesis show conventional part number. 67 2SA0794, 2SA0794A Power Transistors PC T a IC VCE (1)With a 100×100×2mm Al heat sink (2)Without heat sink TC=25˚C –18mA IB=–20mA –16mA –12mA –14mA –10mA –8mA –6mA –1.0 4 3 –1.2 (1) 2 (2) 1 –0.8 –0.6 –4mA –0.4 –2mA –1.0 –0.2 0 0 20 40 60 80 100 120 140 160 180 –2 –4 Collector to emitter saturation voltage VCE(sat) (V) VCE=–10V –0.5 Ta=125˚C –0.4 –25˚C 75˚C –0.3 –0.2 –6 –8 –10 –12 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –3 IC/IB=10 –1 –0.3 TC=100˚C 25˚C –25˚C –0.1 –0.01 –0.01 –0.03 –0.1 –0.3 –1 100 –25˚C 25˚C 30 100˚C –0.3 25˚C –0.1 –0.03 –1 –0.1 –0.3 –1 Cob VCB 50 VCB=–10V 180 f=200MHz TC=25˚C 160 140 120 100 80 60 40 0 –0.3 Collector current IC (A) 68 TC=–25˚C Collector current IC (A) 20 –0.1 –1 –0.01 –0.01 Collector output capacitance Cob (pF) Transition frequency fT (MHz) Forward current transfer ratio hFE TC=100˚C –0.03 IC/IB=10 fT IE 300 –10 –12 –14 –0.03 200 1000 –8 –3 Collector current IC (A) VCE=–10V –6 VBE(sat) IC hFE IC 10 –0.01 –4 VCE(sat) IC Base to emitter voltage VBE (V) 3000 –2 Base current IB (mA) –0.03 –0.1 –0.4 Collector to emitter voltage VCE (V) IC VBE –0.6 –0.6 0 0 Ambient temperature Ta (˚C) –0.8 –0.2 Base to emitter saturation voltage VBE(sat) (V) 0 Collector current IC (A) VCE=–10V TC=25˚C Collector current IC (A) 5 IC I B –1.2 Collector current IC (A) Collector power dissipation PC (W) 6 1 3 10 30 Emitter current IE (mA) 100 IE=0 f=1MHz TC=25˚C 40 30 20 10 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Power Transistors 2SA0794, 2SA0794A ICEO Ta 105 ICBO Ta 104 VCE=–20V Area of safe operation (ASO) –10 VCB=–20V Single pulse TC=25˚C –3 Collector current IC (A) 104 ICBO (Ta) ICBO (Ta=25˚C) ICEO (Ta) ICEO (Ta=25˚C) 103 103 102 102 –1 –0.3 ICP IC t=1s t=10ms –0.1 –0.03 –0.01 10 10 –0.003 1 1 0 20 40 60 80 100 120 140 160 180 200 Ambient temperature Ta (˚C) 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) –0.001 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) 69 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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