ETC 2SA1889C

2SA1889
Silicon PNP Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics
fT = 300 MHz typ
• High voltage and low output capacitance
VCEO = –200 V, Cob = 5.0 pF typ
• Suitable for wide band video amplifier
• Complimentary pair of 2SC5024
Outline
TO-126FM
1
2
1. Emitter
2. Collector
3. Base
3
2SA1889
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–200
V
Collector to emitter voltage
VCEO
–200
V
Emitter to base voltage
VEBO
–4
V
Collector current
IC
–0.2
A
Collector peak current
IC(peak)
–0.5
A
Collector power dissipation
PC
1.4
W
8
W
1
Collector power dissipation
PC*
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–200
—
—
V
IC = –10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
–200
—
—
V
IC = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–4
—
—
V
IE = –10 µA, IC = 0
Collector cutoff current
ICBO
—
—
–10
µA
VCB = –160 V, IE = 0
DC current
transfer ratio
2SA1889B
hFE
60
—
120
2SA1889C
hFE
100
—
200
Base to emitter voltage
VBE
—
—
–1.0
V
VCE = –5 V, IC = –30 mA
Collector to emitter saturation
voltage
VCE(sat)
—
—
–1.0
V
IC = –30 mA, IB = –3 mA
Gain bandwidth product
fT
200
300
—
MHz
VCE = –20 V, IC = –30 mA
Collector output capacitance
Cob
—
5.0
—
pF
VCB = –30 V, IE = 0, f = 1 MHz
See characteristic curves of 2SA1810.
2
VCE = –5 V, IC = –10 mA
2SA1889
Maximum Collector Power Dissipation Curve
Collector Power Dissipation Pc (W)
8
Tc
6
4
2
0
Ta
50
100
150
Temperature T (°C)
200
3
2SA1889
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
4
2SA1889
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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Semiconductor & IC Div.
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Brisbane, CA. 94005-1835
USA
Tel: 415-589-8300
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München
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
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United Kingdom
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Tel: 535-2100
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World Finance Centre,
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Hong Kong
Tel: 27359218
Fax: 27306071
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