Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA0683 (2SA683) and 2SA0684 (2SA684) Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0683 and 2SA0684. ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SC1383 base voltage 2SC1384 Collector to 2SC1383 Ratings 25 V 50 +0.2 VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Conditions ICBO 2SC1383 voltage 2SC1384 Collector to emitter 2SC1383 voltage 2SC1384 Emitter to base voltage 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package min typ VCB = 20V, IE = 0 VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 hFE1 Forward current transfer ratio 1.27 (Ta=25˚C) Symbol Collector to base 0.45–0.1 1.27 1 Parameter Collector cutoff current +0.2 0.45–0.1 Emitter to base voltage ■ Electrical Characteristics +0.3 V 60 VCEO 2.54±0.15 Unit 30 VCBO emitter voltage 2SC1384 0.7–0.2 0.7±0.1 (Ta=25˚C) 13.5±0.5 ● 3.2 ● 8.6±0.2 ■ Features *1 VCE = 10V, IC = 500mA*2 max Unit 0.1 µA 30 V 60 25 V 50 5 V 85 160 50 100 340 hFE2 VCE = 5V, IB = 1A*2 Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA*2 0.2 0.4 V Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA*2 0.85 1.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11 MHz 20 *2 *1h FE1 pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SC1383, 2SC1384 Transistor PC — Ta IC — VCE 1.2 IC — IB 1.5 1.2 1.25 0.8 0.6 0.4 0.2 8mA 1.0 7mA 6mA 0.75 5mA 4mA 3mA 0.5 2mA 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 3 3 25˚C 75˚C 0.3 0.1 0.03 0.3 140 120 100 80 60 40 20 1 3 Emitter current IE (mA) –100 8 10 12 500 400 300 Ta=75˚C 200 25˚C –25˚C 100 0 0.01 0.03 10 0.1 0.3 1 3 10 Collector current IC (A) VCER — RBE 120 IE=0 f=1MHz Ta=25˚C 45 40 35 30 25 20 15 10 5 0 –30 6 VCE=10V Cob — VCB Collector output capacitance Cob (pF) Transition frequency fT (MHz) Ta=–25˚C 1 0.1 4 600 50 –10 2 Base current IB (mA) Collector current IC (A) VCB=10V Ta=25˚C –3 0 hFE — IC 10 0.01 0.01 0.03 10 160 0 –1 10 30 fT — I E 180 8 IC/IB=10 Collector current IC (A) 200 6 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 3 0.1 4 VBE(sat) — IC IC/IB=10 0.3 0.4 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 0.6 0 0 Forward current transfer ratio hFE 40 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter voltage VCER (V) 20 0.8 0.2 1mA 0 0 2 1.0 IB=10mA 9mA 0.25 0 VCE=10V Ta=25˚C Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C IC=10mA Ta=25˚C 100 80 60 2SC1384 40 2SC1383 20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) 2SC1383, 2SC1384 Transistor ICEO — Ta 104 Area of safe operation (ASO) 10 VCE=10V Single pulse Ta=25˚C 3 10 IC t=10ms 0.3 t=1s 0.1 0.03 0.01 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 2SC1384 ICEO (Ta) ICEO (Ta=25˚C) 102 1 2SC1383 Collector current IC (A) ICP 103 30 100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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