ETC 2SC1573BQ

Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SC1573 and 2SA0879 (2SA879)
Unit: mm
5.9±0.2
4.9±0.2
High collector to emitter voltage VCEO.
High transition frequency fT.
■ Absolute Maximum Ratings
Parameter
(Ta=25˚C)
Symbol
0.7±0.1
Ratings
+0.3
●
0.7–0.2
●
8.6±0.2
■ Features
Unit
250
2SC1573A
base voltage
Collector to
VCBO
2SC1573B
400
2SC1573
200
2SC1573A
emitter voltage
300
V
300
VCEO
V
2SC1573B
VEBO
Peak collector current
7
V
ICP
100
mA
Collector current
IC
70
mA
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
Symbol
Conditions
ICBO
VCB = 12V, IE = 0
VCEO
IC = 100µA, IB = 0
2SC1573
VEBO
IE = 1µA, IC = 0
Forward current transfer ratio
hFE*
VCE = 10V, IC = 5mA
Collector to emitter saturation voltage
VCE(sat)
IC = 50mA, IB = 5mA
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
2SC1573B
2SC1573
2SC1573A
capacitance
*h
FE
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
min
typ
max
Unit
2
µA
V
300
5
2SC1573A
Collector output
3
400
2SC1573
voltage
2
200
2SC1573A
2SC1573B
Emitter to base
1
(Ta=25˚C)
Parameter
Collector cutoff current
voltage
+0.2
0.45–0.1
1.27
400
Emitter to base voltage
Collector to emitter
+0.2
0.45–0.1
1.27
3.2
Collector to
13.5±0.5
2.54±0.15
2SC1573
Cob
VCB = 10V, IE = 0, f = 1MHz
2SC1573B
V
7
30
220
1.2
50
80
V
MHz
5
10
4
8
pF
Rank classification
Rank
P
Q
R
hFE
30 ~ 100
60 ~ 150
100 ~ 220
*2SC1573 for Ranks Q and R only
Note.) The Part numbers in the Parenthesis show conventional part number.
1
2SC1573, 2SC1573A, 2SC1573B
Transistor
IC — VCE
1.0
0.8
0.6
0.4
0.2
1.4mA
1.0mA
80
0.8mA
0.6mA
60
0.4mA
40
0.2mA
40
60
80 100 120 140 160
2
Collector to emitter saturation voltage VCE(sat) (V)
80
60
40
20
0
0.8
4
6
8
10
1.2
1.6
2.0
10
3
1
25˚C
0.3
Ta=75˚C
0.1
–25˚C
Transition frequency fT (MHz)
–25˚C
60
0.01
0.1
0
0.3
1
3
10
30
100
0
3
10
0.2
30
Collector current IC (mA)
100
0.6
0.8
1.0
Cob — VCB
10
140
120
100
80
60
40
0
–1
0.4
Base to emitter voltage VBE (V)
20
1
1.0
0.5
VCB=10V
Ta=25˚C
25˚C
0.3
1.5
0.03
VCE=10V
Ta=75˚C
2.0
2.0
fT — I E
180
1.6
2.5
160
240
1.2
VCE=10V
Ta=25˚C
30
hFE — IC
300
0.8
3.0
IC/IB=10
Collector current IC (mA)
360
120
0.4
Base to emitter voltage VBE (V)
IB — VBE
100
Base current IB (mA)
0
0.1
0
Collector output capacitance Cob (pF)
Collector current IC (mA)
100
0.4
40
VCE(sat) — IC
VCE=10V
Ta=25˚C
0
60
Collector to emitter voltage VCE (V)
IC — IB
120
–25˚C
0
0
Ambient temperature Ta (˚C)
Ta=75˚C
80
20
Base current IB (mA)
20
25˚C
100
1.2mA
0
0
Forward current transfer ratio hFE
VCE=10V
Ta=25˚C
IB=2mA
20
0
2
IC — VBE
120
1.8mA
1.6mA
100
Collector current IC (mA)
Collector power dissipation PC (W)
120
Collector current IC (mA)
PC — Ta
1.2
IE=0
f=1MHz
Ta=25˚C
9
8
7
6
5
4
3
2
1
0
–3
–10
–30
Emitter current IE (mA)
–100
1
3
10
30
100
Collector to base voltage VCB (V)
2SC1573, 2SC1573A, 2SC1573B
Transistor
ICBO — Ta
104
IEBO — Ta
104
VCB=250V
Area of safe operation (ASO)
1000
VEB=5V
Single pulse
Ta=25˚C
103
ICEO (Ta)
ICEO (Ta=25˚C)
ICBO (Ta)
ICBO (Ta=25˚C)
103
Collector current IC (A)
300
102
10
102
10
ICP
100
t=10ms
IC
t=1ms
30
DC
10
3
1
0.3
1
1
0
40
80
120
160
200
Ambient temperature Ta (˚C)
0.1
0
40
80
120
160
200
Ambient temperature Ta (˚C)
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
3
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2001 MAR