Transistor 2SC3965 Silicon NPN triple diffusion planer type For small TV video output Unit: mm 5.0±0.2 4.0±0.2 ● ● High collector to emitter voltage VCEO. Small collector output capacitance Cob. Allowing supply with the radial taping. 0.7±0.2 ● 8.0±0.2 ■ Features (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter +0.15 0.45 –0.1 1.27 1.27 +0.15 0.45 –0.1 2.3±0.2 ■ Absolute Maximum Ratings 13.5±0.5 0.7±0.1 1:Emitter 2:Collector 3:Base TO–92NL Package 1 2 3 2.54±0.15 (Ta=25˚C) Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 300 V Collector to emitter voltage VCEO IC = 100µA, IB = 0 300 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V Forward current transfer ratio hFE VCE = 50V, IC = 5mA 50 Base to emitter voltage VBE VCE = 10V, IC = 30mA Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA Transition frequency fT VCB = 30V, IE = –20mA, f = 200MHz Collector output capacitance Cob VCB = 30V, IE = 0, f = 1MHz 250 1.2 1.5 70 V V 140 MHz 2.4 pF 1 Transistor 2SC3965 PC — Ta IC — VCE 1.2 IC — VBE 120 240 VCE=5V 0.8 0.6 0.4 0.2 100 1.2mA 80 1.0mA 0.8mA 0.6mA 60 0.4mA 40 0.2mA 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 10 10 Ta=75˚C 25˚C –25˚C 0.3 0.1 0.03 30 40 50 60 10 30 100 300 25˚C 160 –25˚C 120 80 40 1 3 10 30 100 300 1000 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 4 Ta=25˚C Single pulse 300 Collector current IC (A) 6 ICP t=2.0ms 100 IC t=1s 30 10 3 1 2 0.3 0 0.1 3 10 30 100 300 1000 Collector to base voltage VCB (V) 1.6 2.0 VCB=30V Ta=25˚C 1 3 10 30 100 300 200 160 120 80 40 0 –1 –3 –10 –30 Emitter current IE (mA) Area of safe operation (ASO) 1000 8 1.2 Ta=75˚C 200 1000 10 0.8 240 Collector current IC (mA) 1 0.4 Base to emitter voltage VBE (V) fT — I E 0 3 0 VCE=50V 0.01 1 Collector output capacitance Cob (pF) 20 240 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 30 1 80 hFE — IC IC/IB=10 3 120 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 –25˚C 0 0 Transition frequency fT (MHz) 20 Ta=75˚C 160 40 0 0 25˚C 200 20 0 2 1.6mA Collector current IC (mA) 1.0 Collector current IC (mA) Collector power dissipation PC (W) Ta=25˚C IB=2.0mA 1000 Collector to emitter voltage VCE (V) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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