Transistor 2SC3941 Silicon NPN triple diffusion planer type For high breakdown voltage general amplification For small TV video output Complementary to 2SB1221 Unit: mm 4.0±0.2 ● High collector to emitter voltage VCEO. High transition frequency fT. Allowing supply with the radial taping. ■ Absolute Maximum Ratings 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Peak collector current ICP 100 mA Collector current IC 70 mA Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 13.5±0.5 ● +0.15 0.45 –0.1 1.27 1.27 +0.15 0.45 –0.1 2.3±0.2 ● 0.7±0.2 ■ Features 8.0±0.2 5.0±0.2 1:Emitter 2:Collector 3:Base TO–92NL Package 1 2 3 2.54±0.15 (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 2 µA Collector cutoff current ICBO VCB = 100V, IE = 0 Collector to emitter voltage VCEO IC = 100µA, IB = 0 300 V Emitter to base voltage VEBO IE = 1µA, IC = 0 7 V Forward current transfer ratio hFE * VCB = 10V, IC = 5mA 30 Collector to emitter saturation voltage VCE(sat) IC = 50mA, IB = 5mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz *h FE 220 1.2 50 80 4 V MHz 8 pF Rank classification Rank P Q R hFE 30 ~ 100 60 ~ 150 100 ~ 220 1 2SC3941 Transistor IC — VCE 1.0 0.8 0.6 0.4 0.2 1.4mA 1.0mA 80 0.8mA 0.6mA 60 0.4mA 40 0.2mA 40 60 80 100 120 140 160 0.4 Collector to emitter saturation voltage VCE(sat) (V) 80 60 40 20 0 0.8 0.8 1.2 1.6 2.0 1.2 1.6 2.0 10 3 1 Ta=75˚C 0.3 25˚C –25˚C 0.1 Transition frequency fT (MHz) –25˚C 60 0.01 0.1 0 0.3 1 3 10 30 100 0 3 10 0.2 30 Collector current IC (mA) 100 0.6 0.8 1.0 Cob — VCB 10 140 120 100 80 60 40 0 –1 0.4 Base to emitter voltage VBE (V) 20 1 1.0 0.5 VCB=10V Ta=25˚C 25˚C 0.3 1.5 0.03 VCE=10V Ta=75˚C 2.0 2.0 fT — I E 180 1.6 2.5 160 240 1.2 VCE=10V Ta=25˚C 30 hFE — IC 300 0.8 3.0 IC/IB=10 Collector current IC (mA) 360 120 0.4 Base to emitter voltage VBE (V) IB — VBE 100 Base current IB (mA) 0 0.1 0 Collector output capacitance Cob (pF) Collector current IC (mA) 100 0.4 40 VCE(sat) — IC VCE=10V Ta=25˚C 0 60 Collector to emitter voltage VCE (V) IC — IB 120 –25˚C 0 0 Ambient temperature Ta (˚C) Ta=75˚C 80 20 Base current IB (mA) 20 25˚C 100 1.2mA 0 0 Forward current transfer ratio hFE VCE=10V Ta=25˚C IB=2mA 20 0 2 IC — VBE 120 1.8mA 1.6mA 100 Collector current IC (mA) Collector power dissipation PC (W) 120 Collector current IC (mA) PC — Ta 1.2 IE=0 f=1MHz Ta=25˚C 8 6 4 2 0 –3 –10 –30 Emitter current IE (mA) –100 1 3 10 30 100 Collector to base voltage VCB (V) 2SC3941 Transistor ICBO — Ta 104 IEBO — Ta 104 VCB=250V Area of safe operation (ASO) 1000 VEB=5V Single pulse Ta=25˚C 103 IEBO (Ta) IEBO (Ta=25˚C) ICBO (Ta) ICBO (Ta=25˚C) 103 Collector current IC (mA) 300 102 10 102 10 ICP 100 t=10ms IC t=1ms 30 DC 10 3 1 0.3 1 1 0 40 80 120 160 200 Ambient temperature Ta (˚C) 0.1 0 40 80 120 160 200 Ambient temperature Ta (˚C) 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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