SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SC4669 Case : E-pack (TE10S4) Unit : mm 10A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Symbol Tstg Tj VCBO VCEO VEBO IC I CP IB I BP PT Electrical Characteristics (Tc=25) Item Symbol Collector to Emitter Sustaining Voltage VCEO(sus) Collector Cutoff Current I CBO I CEO Emitter Cutoff Current I EBO DC Current Gain hFE Collector to Emitter Saturation Voltage VCE(sat) Base to Emitter Saturation Voltage VBE(sat) Thermal Resistance Æjc Transition Frequency fT Turn on Time ton Storage Time ts Fall Time tf Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Tc = 25 Conditions I C = 0.1A At rated Voltage At rated Voltage VCE = 2V, I C = 5A I C = 5A I B = 0.5A Junction to case VCE = 10V, I C = 1A I C = 5A I B1 = 0.5A, I B2 = 0.5A RL = 5¶, VBB2 = 4V Ratings -55`150 150 60 40 7 10 20 1.5 2 10 Unit V V V A A A A Ratings Min 40 Max 0.1 Max 0.1 Max 0.1 Min 70 Max 0.3 Max 1.2 Max 12.5 TYP 50 Max 0.3 Unit V mA Max 1.5 Max 0.5 W mA V V /W MHz Ês DC Current Gain hFE 0.01 −55°C −25°C 0°C 25°C 50°C 100°C Tc = 150°C 10 0.001 100 1000 hFE - I C Collector Current IC [A] 0.1 2SC4669 1 10 VCE = 2V 20 Collector-Emitter Voltage VCE [V] 7A 7A 10A 10A 15A 15A 1 2 2.5 Tc = 25°C 0 0.001 0.5 1 0.01 Base Current IB [A] 0.1 0 0.5 1 1.5 5A 5A 1.5 3A 3A 3 2 IC = 1A IC = 1A Saturation Voltage 2 2.5 3 2SC4669 Base-Emitter Voltage VBE [V] 2SC4669 Switching Time tSW [µs] 1 Switching Time - IC ts tf 0.1 ton IB1 = 0.1IC IB2 = 0.1IC VBB2 = 4V VCC = 25V Tc = 25°C 0.01 0 2 4 6 Collector Current IC [A] 8 10 2SC4669 Switching Time - Tc 1 Switching Time tSW [µs] ts tf ton 0.1 IC = 5A IB1 = 0.5A IB2 = 0.5A VBB2 = 4V R L = 5Ω 0.01 0 50 100 Case Temperature Tc [°C] 150 Transient Thermal Impedance θjc(t) [°C/W] 0.1 10-5 1 10 100 10-4 10-3 2SC4669 10-1 Time t [s] 10-2 100 Transient Thermal Impedance 101 102 2SC4669 20 10ms 1ms Forward Bias SOA 100µs 10 Collector Current IC [A] DC PT limit 1 IS/B limit Tc = 25°C Single Pulse 0.1 1 10 Collector-Emitter Voltage VCE [V] 40 2SC4669 Collector Current Derating Collector Current Derating [%] 100 IS/B limit 80 60 40 PT limit 20 VCE = fixed 0 0 50 100 Case Temperature Tc [°C] 150 2SC4669 Reverse Bias SOA 20 Collector Current IC [A] 15 10 5 IB1 = 0.04IC IB2 = 0.4A VBB2 = 5V Tc < 150°C 0 0 10 20 30 40 Collector-Emitter Voltage VCE [V] 50