2SC4648 Silicon NPN Epitaxial High Speed Medium Power Switching Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————– Collector to base voltage VCBO 70 V ——————————————————————– Collector to emitter voltage VCEO 50 V ——————————————————————– Emitter to base voltage VEBO 5 V ——————————————————————– Collector current IC 0.5 A ——————————————————————– Collector power dissipation PC 0.5 W ——————————————————————– Junction temperature Tj 150 °C ——————————————————————– Storage temperature Tstg –55 to +150 °C ——————————————————————– TO-92 (1) 3 1 2 1. Emitter 2. Collector 3. Base Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ———————————————————————————————————————————————– Collector to base breakdown voltage V(BR)CBO 70 — — V IC = 100 µA, IE = 0 ———————————————————————————————————————————————– Collector to emitter breakdown voltage V(BR)CEO 50 — — V IC = 10 mA, RBE = ∞ ———————————————————————————————————————————————– Emitter to base breakdown voltage V(BR)EBO 5 — — V IE = 100 µA, IC = 0 ———————————————————————————————————————————————– Collector cutoff current ICBO — — 100 µA VCB = 60 V, IE = 0 ———————————————————————————————————————————————– DC current transfer ratio hFE1 30 — — — VCE = 1 V, IC = 60 mA ———————————————————————————————————————————————– DC current transfer ratio hFE2 20 — — — VCE = 1 V, IC = 500 mA ———————————————————————————————————————————————– Collector to emitter saturation voltage VCE(sat) — — 0.8 V IC = 500 mA, IB = 25 mA ———————————————————————————————————————————————– Base to emitter saturation voltage VBE(sat) 0.8 — 1.2 V IC = 500 mA, IB = 25 mA ———————————————————————————————————————————————– Turn on time ton — — 45 ns IC = 10IB1 = –10IB2 = 300 mA ———————————————————————————————————————————————– Turn off time toff — — 70 ns IC = 10IB1 = –10IB2 = 300 mA ———————————————————————————————————————————————–