2SC5024 Silicon NPN Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier • Complimentary pair of 2SA1889 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————————————————————————— Collector to base voltage VCBO 200 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 200 V ——————————————————————————————————————————— Emitter to base voltage VEBO 4 V ——————————————————————————————————————————— Collector current IC 0.2 A ——————————————————————————————————————————— Collector peak current ic(peak) 0.5 A ——————————————————————————————————————————— Collector power dissipation PC 1.4 W ——————————————————————————————————————————— Collector power dissipation PC*1 8 W ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— Note: 1. Value at TC = 25°C. 2SC5024 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 200 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 200 — — V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO 4 — — V IE = 10 µA, IC = 0 ——————————————————————————————————————————— Collector cutoff current ICBO — — 10 µA VCB = 160 V, IE = 0 ——————————————————————————————————————————— DC current transfer ratio 2SC5024B hFE 60 — 120 VCE = 5 V, IC = 10 mA —————————————————————— 2SC5024C hFE 100 — 200 ——————————————————————————————————————————— Base to emitter voltage VBE — — 1.0 V VCE = 5 V, IC = 30 mA ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) — — 1.0 V IC = 30 mA, IB = 3 mA ——————————————————————————————————————————— Gain bandwidth product fT 200 300 — MHz VCE = 20 V, IC = 30 mA ——————————————————————————————————————————— Collector output capacitance Cob — 5.0 — pF VCB = 30 V, IE = 0, f = 1 MHz ——————————————————————————————————————————— See characteristic curves of 2SC4704. 2SC5024 Maximum Collector Power Dissipation Curve Collector Power Dissipation Pc (W) 8 Tc 6 4 2 0 Ta 50 100 150 Temperature T (°C) 200