Ordering number:EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions · High breakdown voltage (VCBO=1000V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm 2079B [2SC5304] 4.5 10.0 2.8 0.6 16.1 16.0 7.2 3.5 3.2 0.7 14.0 3.6 0.9 1.2 0.75 2 1:Base 2:Collector 3:Emitter 3 2.4 1 2.55 2.55 SANYO:TO-220FI (LS) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-Emitter Voltage VCEO VEBO 450 V 9 V IC 7 A Collector Current (pulse) ICP 14 A Collector Dissipation PC 2 W Junction Temperature Tj Storage Temperature Tstg Emitter-to-Base Voltage Collector Current 35 W 150 ˚C –55 to +150 ˚C Tc=25˚C Electrical Characteristics at Ta=25˚C Parameter Symbol Conditons Ratings min typ max Unit Collector Cutoff Current ICBO VCB=450V, IE=0 10 µA Collector Cutoff Current ICES VCE=1000V, RBE=0 1.0 mA 1.0 mA 1.0 V 1.5 V Collector Saturation Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Storage Time Fall Time VCEO(sus) IC=100mA, IB=0 IEBO VEB=9V, IC=0 VCE(sat) IC=3.5A, IB=0.7A VBE(sat) hFE1 hFE2 tstg tf IC=3.5A, IB=0.7A VCE=5V, IC=0.3A VCE=5V, IC=3.0A IC=3.5A, IB1=0.7A, IB2=–1.4A IC=3.5A, IB1=0.7A, IB2=–1.4A 450 30 V 40 50 10 2.5 µs 0.15 µs SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61598TS (KOTO) TA-1238 No.5883-1/3 2SC5304 Switching Time Test Circuit RC IB1 IB2 IB1 VOUT VCC IB2 0.9 VOUT VOUT 0.1 VOUT tstg I C – VCE 1.8A 1.6A VCE =5V 6 0.2A 4 2 4 3 2 – 40°C 0.4A 5 C 6 Collector Current, IC – A 1.2A 1.0A 0.8A 0.6A 25°C 8 20° 2.0A I C - VBE 7 1.4A Ta = 1 10 Collector Current, IC – A tf 1 IB = 0 2 4 6 8 0 0 10 0.2 2 10 7 5 3 2 1.0 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 120 °C 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 10 3 5 7 0.1 Switching Time, SW Time – µs Base–to–Emitter Saturation Voltage, VCE (sat) – V 7 5 3 2 Ta=–40°C 7 25°C 120°C 3 2 0.1 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC – A 3 5 7 1.0 2 3 5 7 10 3 5 7 SW Time - I C 10 7 5 IC /IB =5 5 2 Collector Current, IC – A VBE(sat) - I C 1.0 1.4 VCE(sat) - I C 10 I /I =5 7 C B 5 Collector Current, IC – A 10 1.2 Ta = –40°C 1.0 °C 25°C 3 0.8 40 Ta=120°C 5 Collector–to–Emitter Saturation Voltage, VCE (sat) –V DC Current Gain,hFE VCE =5V 7 0.6 – hFE - I C 100 0.4 Base-to-Emitter Voltage, VBE – V Collector-to-Emitter Voltage, VCE – V C 0 25° 0 10 3 2 VCC =200V IC /IB1=5 IB2/IB1=2 R load t stg 1.0 7 5 3 2 tf 0.1 7 5 3 2 0.01 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC – A No.5883-2/3 2SC5304 SW Time - I B2 5 7 2 1.0 3 5 Base Current, IB2 – A op er at io n 5 7 10 2 3 5 7 100 2 3 5 7 Collector–to–Emitter Voltage, VCE – V Reverse Bias A S O 5 C Tc = 25 °C 3 1pulse 2 2 3 7 s 3 D 3 2 0.1 7 5 0µ 2 0.1 s 0.01 7 0µ 3 2 1.0 7 5 s 0.1 7 5 =3 5W 3 2 s tf PC 1m 3 2 PT<50µs I CP 10 I C 7 5 30 1.0 7 5 Collector Current, IC – A t stg 3 2 Forward Bias A S O 3 2 10 VCC = 200V IC = 3.5A IB1 =0.7A R load m 10 Switching Time, SW Time – µs 10 7 5 P C - Ta 2.5 3 Collector Dissipation, PC – W Collector Current, IC – A 2 10 7 5 3 2 1.0 7 5 L=200µH 3 IB2=–1A 2 Tc=25°C 0.1 1pulse 5 7 2 100 3 5 7 2 1000 1.5 No he at 1.0 sin k 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – °C Collector-to-Emitter Voltage, VCE – V P C - Tc 40 Collector Dissipation, PC – W 2.0 35 30 20 10 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc – °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 1998. Specifications and information herein are subject to change without notice. PS No.5883-3/3