Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency output amplification ● 0.5±0.08 1.5±0.1 2.5±0.1 0.4±0.04 3.0±0.15 3 ■ Absolute Maximum Ratings +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ■ 1.5±0.1 4.5±0.1 1.6±0.2 Features 2 1 (Ta=25˚C) marking * Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Marking symbol : P Internal Connection * Collector power dissipation PC Junction temperature Tj Storage temperature Tstg 1 W 150 ˚C –55 ~ +150 ˚C 1:Base 2:Collector 3:Emitter C Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter EIAJ:SC–62 Mini Power Type Package B E (Ta=25˚C) Symbol Conditions min typ VCB = 25V, IE = 0 max Unit 100 nA 100 nA Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 4V, IC = 0 Collector to base voltage VCBO IC = 100µA, IE = 0 100 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 80 V Emitter to base voltage VEBO IE = 100µA, IC = 0 5 V *1 VCE = 10V, IC = 1A*2 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = 1.0A, IB = 1.0mA*2 Base to emitter saturation voltage VBE(sat) IC = 1.0A, IB = 1.0mA*2 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 4000 40000 1.8 2.2 150 FE V MHz *2 *1h V Pulse measurement Rank classification Rank hFE Marking Symbol Q R S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 PQ PR PS 1 Transistor 2SD1511 PC — Ta IC — VCE 1.0 2.0 0.8 0.6 0.4 0.2 1.6 180µA 160µA 140µA 120µA 100µA 1.2 IB=200µA 80µA 0.8 60µA 0.4 40µA 0 40 80 120 160 200 0 Ambient temperature Ta (˚C) 2 Forward current transfer ratio hFE 10 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 10 IC/IB=1000 30 10 3 25˚C 3 Collector current IC (A) 10 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Cob — VCB 30 VCE=10V Ta=75˚C 25˚C 104 –25˚C 103 102 10 0.01 0.03 Ta=–25˚C 1 hFE — IC 30 1 8 105 IC/IB=1000 3 6 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 4 Collector output capacitance Cob (pF) 0 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 2.4 Collector current IC (A) Collector power dissipation PC (W) 1.2 IE=0 f=1MHz Ta=25˚C 25 20 15 10 5 0 0.1 0.3 1 3 Collector current IC (A) 10 1 3 10 30 100 Collector to base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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