ETC 2SD1752/2SD1752A

Power Transistors
2SD1752, 2SD1752A
Silicon NPN epitaxial planar type
For power amplification and low-voltage switching
Complementary to 2SB1148 and 2SB1148A
Unit: mm
7.0±0.3
0.8±0.2
1.0±0.2
3.5±0.2
2.0±0.2
20
VCEO
emitter voltage 2SD1752A
7.0±0.3
3.0±0.2
VEBO
5
V
Peak collector current
ICP
20
A
Collector current
IC
10
A
2.5
0.75±0.1
dissipation
Ta=25°C
Junction temperature
W
1.3
Tj
150
1
Tstg
–55 to +150
3
˚C
■ Electrical Characteristics
Conditions
Symbol
2SD1752
current
2SD1752A
Emitter cutoff current
ICBO
IEBO
Collector to emitter
2SD1752
voltage
2SD1752A
Forward current transfer ratio
4.6±0.4
1:Base
2:Collector
3:Emitter
I Type Package (Y)
(TC=25˚C)
Parameter
Collector cutoff
˚C
0.9±0.1
0 to 0.15
2
2.3±0.2
Storage temperature
0.5 max.
1.1±0.1
15
PC
0 to 0.15
V
40
Emitter to base voltage
Collector power TC=25°C
Unit: mm
1.0
2SD1752
Unit
V
50
1:Base
2:Collector
3:Emitter
I Type Package
3
2.5±0.2
Collector to
40
VCBO
2
1.0
2SD1752A
Ratings
1
2.5±0.2
2SD1752
base voltage
+0.3
(TC=25˚C)
Symbol
Collector to
2.3±0.2
4.6±0.4
■ Absolute Maximum Ratings
Parameter
0.85±0.1
0.4±0.1
1.0 max.
●
10.0 –0.
●
1.1±0.1
0.75±0.1
7.2±0.3
●
Low collector to emitter saturation voltage VCE(sat)
High-speed switching
Satisfactory linearity of foward current transfer ratio hFE
Large collector current IC
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
10.2±0.3
●
7.2±0.3
■ Features
●
3.5±0.2
3.0±0.2
min
50
VCB = 50V, IE = 0
50
VEB = 5V, IC = 0
50
20
IC = 10mA, IB = 0
hFE1
VCE = 2V, IC = 0.1A
45
VCE = 2V, IC = 3A
90
hFE2
max
VCB = 40V, IE = 0
VCEO
*
typ
Unit
µA
µA
V
40
260
Collector to emitter saturation voltage
VCE(sat)
IC = 10A, IB = 0.33A
Base to emitter saturation voltage
VBE(sat)
IC = 10A, IB = 0.33A
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 10MHz
120
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
200
pF
Turn-on time
ton
0.3
µs
Storage time
tstg
0.4
µs
Fall time
tf
0.1
µs
*h
FE2
IC = 3A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 20V
0.6
1.5
V
V
Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
1
Power Transistors
2SD1752, 2SD1752A
PC — Ta
IC — VCE
VCE(sat) — IC
TC=25˚C
(1) TC=Ta
(2) Without heat sink
(PC=1.3W)
(1)
15
Collector to emitter saturation voltage VCE(sat) (V)
10
IB=100mA
Collector current IC (A)
Collector power dissipation PC (W)
20
10
5
90mA
80mA
8
70mA
60mA
50mA
6
40mA
4
30mA
20mA
2
10mA
(2)
0
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
1
2
3
4
5
6
3
TC=100˚C
1
25˚C
0.3
–25˚C
0.1
0.03
0.01
0.1
Collector to emitter voltage VCE (V)
VBE(sat) — IC
IC/IB=20
10
0.3
1
3
10
30
Collector current IC (A)
hFE — IC
fT — IC
IC/IB=20
25˚C
1
–25˚C
TC=100˚C
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
300
TC=100˚C
25˚C
100
–25˚C
30
10
3
0.3
Collector current IC (A)
ton
0.3
tstg
0.1
tf
1ms
3
300ms
1
0.3
0.1
0.01
0.01
2
3
4
Collector current IC (A)
2
t=10ms
0.03
0.03
5
100
30
10
3
1
1
3
10
30
100
300
0.1
0.01 0.03
0.1
0.3
1
3
Collector current IC (A)
IC
10
2SD1752
1
1
30
Non repetitive pulse
TC=25˚C
30 ICP
3
0
10
Area of safe operation (ASO)
Collector current IC (A)
Switching time ton,tstg,tf (µs)
10
3
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=30(IB1=–IB2)
VCC=20V
TC=25˚C
30
1
Collector current IC (A)
ton, tstg, tf — IC
100
300
0.3
1
0.1
30
Transition frequency fT (MHz)
3
VCE=10V
f=1MHz
TC=25˚C
VCE=2V
1000
2SD1752A
10
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
1000
1000
Collector to emitter voltage VCE (V)
10
Power Transistors
2SD1752, 2SD1752A
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
103
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
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2001 MAR