ETC 2SD1754/2SD1754A

Power Transistors
2SD1754, 2SD1754A
Silicon NPN triple diffusion planar type
Unit: mm
7.0±0.3
For power amplification with high forward current transfer ratio
+0.3
1.0±0.2
10.0 –0.
High foward current transfer ratio hFE
Satisfactory linearity of foward current transfer ratio hFE
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
2.3±0.2
4.6±0.4
1
2SD1754A
Collector to
2SD1754
emitter voltage 2SD1754A
100
V
80
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
6
A
Collector current
IC
3
A
Base current
IB
1
A
Collector power TC=25°C
dissipation
Ta=25°C
15
PC
Junction temperature
Tj
Storage temperature
Tstg
■ Electrical Characteristics
Parameter
2SD1754
current
2SD1754A
W
150
˚C
–55 to +150
˚C
0.75±0.1
0.5 max.
1.1±0.1
1
0.9±0.1
0 to 0.15
2
3
4.6±0.4
1:Base
2:Collector
3:Emitter
I Type Package (Y)
(TC=25˚C)
Symbol
Collector cutoff
0 to 0.15
2.5
2.3±0.2
1.3
Unit: mm
V
3.0±0.2
60
VCEO
3.5±0.2
1.0
base voltage
7.0±0.3
2.0±0.2
80
VCBO
Unit
2.5±0.2
2SD1754
Ratings
1.0 max.
Symbol
Collector to
1:Base
2:Collector
3:Emitter
I Type Package
3
7.2±0.3
Parameter
2
(TC=25˚C)
10.2±0.3
■ Absolute Maximum Ratings
0.85±0.1
0.4±0.1
1.0
●
1.1±0.1
0.75±0.1
2.5±0.2
●
0.8±0.2
7.2±0.3
■ Features
●
3.5±0.2
3.0±0.2
ICBO
Conditions
min
typ
max
VCB = 80V, IE = 0
100
VCB = 100V, IE = 0
100
Unit
µA
Collector cutoff current
ICEO
VCE = 40V, IB = 0
100
µA
Emitter cutoff current
IEBO
VEB = 6V, IC = 0
100
µA
VCEO
IC = 25mA, IB = 0
Forward current transfer ratio
hFE*
VCE = 4V, IC = 0.5A
Collector to emitter saturation voltage
VCE(sat)
IC = 2A, IB = 0.05A
Transition frequency
fT
VCE = 12V, IC = 0.2A, f = 10MHz
Collector to emitter
2SD1754
voltage
2SD1754A
*h
FE
60
V
80
500
1500
1
30
V
MHz
Rank classification
Rank
hFE
Q
P
500 to 1000 800 to 1500
1
Power Transistors
2SD1754, 2SD1754A
PC — Ta
IC — VCE
TC=25˚C
1mA
10
5
0.8
0.7mA
0.6mA
0.6
0.5mA
0.4mA
0.4
0.3mA
0.2mA
0.2
20
40
60
80 100 120 140 160
2
4
2
6
8
10
12
0
Collector to emitter voltage VCE (V)
VCE(sat) — IC
hFE — IC
3000
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03
0.1
0.3
1
3
25˚C
300
100
30
10
3
0.1
0.3
1
3
10 I
CP
t=1ms
300ms
1
10ms
0.3
3
10
30
2SD1754A
2SD1754
0.1
0.01
100
300
Collector to emitter voltage VCE
10
1000
(V)
0.1
0.3
1
3
Collector current IC (A)
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
Non repetitive pulse
TC=25˚C
0.03
30
1
0.01 0.03
10
103
IC
100
3
Area of safe operation (ASO)
30
300
Collector current IC (A)
100
1.2
1000
–25˚C
1
0.01 0.03
10
1.0
VCE=12V
f=10MHz
TC=25˚C
3000
TC=100˚C
Transition frequency fT (MHz)
25˚C
1
0.8
fT — IC
1000
TC=100˚C
0.6
VCE=4V
Forward current transfer ratio hFE
10
0.4
10000
IC/IB=40
30
3
0.2
Base to emitter voltage VBE (V)
10000
100
Collector current IC (A)
Collector current IC (A)
–25˚C
0
0
Ambient temperature Ta (˚C)
1
TC=100˚C
3
1
0
3
25˚C
4
0.1mA
(2)
0
2
Collector current IC (A)
(1)
15
5
IB=1.2mA
(1) TC=Ta
(2) Without heat sink
(PC=1.3W)
0
Collector to emitter saturation voltage VCE(sat) (V)
IC — VBE
1.0
Collector current IC (A)
Collector power dissipation PC (W)
20
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–4
10–3
10–2
10–1
1
Time t (s)
10
102
103
104
10
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2001 MAR