Power Transistors 2SD1771, 2SD1771A Silicon NPN triple diffusion planar type 3.4±0.3 8.5±0.2 1.0±0.1 1.5±0.1 10.0±0.3 6.0±0.5 ■ Features 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 ■ Absolute Maximum Ratings 2SD1771 200 150 VCEO emitter voltage 2SD1771A 180 V V Emitter to base voltage VEBO 6 V Peak collector current ICP 2 A Collector current IC 1 3.4±0.3 6.0±0.3 1.0±0.1 +0.4 Collector to VCBO Unit: mm 8.5±0.2 +0 2SD1771A 200 Unit 1.5–0.4 base voltage Ratings 10.0±0.3 2SD1771 1:Base 2:Collector 3:Emitter N Type Package 3 2.0 Symbol Collector to 2 (TC=25˚C) 4.4±0.5 Parameter 0.5max. 3.0–0.2 ● 1.1max. 0.8±0.1 4.4±0.5 ● 1.5max. High collector to emitter VCEO Large collector power dissipation PC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● Unit: mm R0.5 R0.5 0 to 0.4 2.54±0.3 A 14.7±0.5 For power amplification For TV vertical deflection output Complementary to 2SB1191 and 2SB1191A 1.1 max. 5.08±0.5 Collector power TC=25°C dissipation 25 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter W 1.3 1 150 ˚C –55 to +150 ˚C Symbol Conditions ICBO VCB = 200V, IE = 0 Emitter cutoff current IEBO VEB = 4V, IC = 0 2SD1771 voltage 2SD1771A Emitter to base voltage min IC = 5mA, IB = 0 VEBO IE = 0.5mA, IC = 0 6 * typ max Unit 50 µA 50 µA 150 VCEO hFE1 Forward current transfer ratio 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Collector cutoff current Collector to emitter 2 V 180 VCE = 10V, IC = 100mA 60 hFE2 VCE = 10V, IC = 300mA 50 V 240 Base to emitter voltage VBE VCE = 10V, IC = 300mA 1 V Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA 1 V Transition frequency fT VCE = 10V, IC = 100mA, f = 1MHz 20 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 27 pF *h FE1 Rank classification Rank Q P hFE1 60 to 140 100 to 240 1 Power Transistors 2SD1771, 2SD1771A PC — Ta IC — VCE IC — VBE 1.6 30 25 (1) 20 15 10 4 TC=25˚C VCE=10V 1.4 IB=20mA Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) 35 Collector current IC (A) Collector power dissipation PC (W) 40 1.2 1.0 10mA 8mA 0.8 6mA 0.6 4mA 0.4 3 25˚C TC=100˚C 2 –25˚C 1 2mA (2) 5 0.2 1mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 4 8 16 20 24 0.8 1.2 1.6 fT — IC 1000 TC=100˚C 1 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 TC=100˚C 300 25˚C 100 –25˚C 30 10 3 0.03 0.1 0.3 1 10 3 ICP t=0.5ms 300ms 0.3 1ms 0.1 2SD1771 2SD1771A 10ms 0.03 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE 10 3 1 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C IC 30 Collector current IC (A) 102 1 100 0.1 0.01 0.03 3 Area of safe operation (ASO) 30 300 0.3 1 0.01 3 Transition frequency fT (MHz) 3 VCE=10V f=1MHz TC=25˚C VCE=10V 1000 Forward current transfer ratio hFE IC/IB=10 10 100 Collector current IC (A) 0.4 Base to emitter voltage VBE (V) hFE — IC Collector current IC (A) 2 0 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 12 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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