ETC 2SD1753P

Power Transistors
2SD1753
Silicon NPN triple diffusion planar type
Unit: mm
7.0±0.3
For power amplification with high forward current transfer ratio
+0.3
1.0±0.2
10.0 –0.
High foward current transfer ratio hFE
Satisfactory linearity of foward current transfer ratio hFE
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
2.3±0.2
4.6±0.4
Unit
VCBO
200
V
Collector to emitter voltage
VCEO
150
V
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
2.5
A
Collector current
IC
1
A
Base current
IB
0.1
A
dissipation
Ta=25°C
15
PC
Junction temperature
Tj
Storage temperature
Tstg
W
1.3
150
˚C
–55 to +150
˚C
3.5±0.2
2.0±0.2
Parameter
2.5
0.75±0.1
1
0.9±0.1
0 to 0.15
2
3
2.3±0.2
1:Base
2:Collector
3:Emitter
I Type Package (Y)
(TC=25˚C)
Symbol
Conditions
min
ICBO
Emitter cutoff current
IEBO
VEB = 6V, IC = 0
Collector to emitter voltage
VCEO
IC = 25mA, IB = 0
150
Forward current transfer ratio
hFE*
VCE = 4V, IC = 0.2A
500
Collector to emitter saturation voltage
VCE(sat)
IC = 0.5A, IB = 0.02A
Transition frequency
fT
VCE = 4V, IC = 0.1A, f = 10MHz
FE
0.5 max.
1.1±0.1
Collector cutoff current
*h
0 to 0.15
3.0±0.2
4.6±0.4
■ Electrical Characteristics
Unit: mm
1.0
Collector to base voltage
7.0±0.3
1.0 max.
Ratings
7.2±0.3
Symbol
Collector power TC=25°C
1:Base
2:Collector
3:Emitter
I Type Package
3
(TC=25˚C)
10.2±0.3
Parameter
2
2.5±0.2
1
■ Absolute Maximum Ratings
0.85±0.1
0.4±0.1
1.0
●
1.1±0.1
0.75±0.1
2.5±0.2
●
0.8±0.2
7.2±0.3
■ Features
●
3.5±0.2
3.0±0.2
typ
VCB = 200V, IE = 0
max
Unit
100
µA
100
µA
V
2000
1
25
V
MHz
Rank classification
Rank
hFE
Q
P
500 to 1200 800 to 2000
1
Power Transistors
2SD1753
PC — Ta
IC — VCE
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
0.5
TC=25˚C
(1) TC=Ta
(2) Without heat sink
(PC=1.3W)
Collector current IC (A)
Collector power dissipation PC (W)
20
15
(1)
10
5
IB=400µA
0.4
350µA
300µA
0.3
250µA
200µA
0.2
150µA
100µA
0.1
50µA
(2)
0
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
6
8
10
12
–25˚C
0.3
0.1
0.03
0.3
1
25˚C
300
100
30
10
3
3 ICP
t=1ms
300ms
0.1
0.03
0.01
3
10
30
100
300
Collector to emitter voltage VCE
2
1
1000
100
30
10
0.1
0.3
1
3
1
0.01 0.03
10
(V)
0.1
0.3
1
3
Collector current IC (A)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–4
3
VCE=4V
f=10MHz
TC=25˚C
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
Collector current IC (A)
10
1
0.3
300
Collector current IC (A)
Non repetitive pulse
TC=25˚C
0.3
0.1
3
103
1
0.03
1000
Area of safe operation (ASO)
10ms
0.01
0.01
3000
TC=100˚C
1
0.01 0.03
3
100
IC
0.03
fT — IC
–25˚C
Collector current IC (A)
30
0.1
10000
Transition frequency fT (MHz)
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
1
0.1
3000
1000
25˚C
0.03
–25˚C
VCE=4V
TC=100˚C
0.01
0.01
25˚C
0.3
hFE — IC
IC/IB=25
3
1
Collector current IC (A)
10000
10
TC=100˚C
3
Collector to emitter voltage VCE (V)
VBE(sat) — IC
IC/IB=25
10
10–3
10–2
10–1
1
Time t (s)
10
102
103
104
10
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2001 MAR