ETC 2SD1755Q

Power Transistors
2SD1755
Silicon NPN epitaxial planar type
Unit: mm
7.0±0.3
For power amplification with high forward current transfer ratio
■ Absolute Maximum Ratings
+0.3
1.0±0.2
10.0 –0.
High forward current transfer ratio hFE which has satisfactory
linearity
High emitter to base voltage VEBO
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
1
2
1:Base
2:Collector
3:Emitter
I Type Package
3
(TC=25˚C)
7.0±0.3
VCBO
100
V
VCEO
60
V
Emitter to base voltage
VEBO
15
V
Peak collector current
ICP
12
A
Collector current
IC
6
A
Base current
IB
3
A
Ta=25°C
dissipation
2.5
0.75±0.1
Tj
Storage temperature
Tstg
0.5 max.
1.1±0.1
15
PC
Junction temperature
0 to 0.15
3.0±0.2
1
Collector power TC=25°C
■ Electrical Characteristics
3
2.3±0.2
150
˚C
–55 to +150
˚C
0.9±0.1
0 to 0.15
2
W
1.3
Unit: mm
1.0
Collector to base voltage
Collector to emitter voltage
3.5±0.2
2.0±0.2
1.0
Unit
1.0 max.
Ratings
7.2±0.3
Symbol
10.2±0.3
Parameter
2.5±0.2
●
1.1±0.1
0.75±0.1
2.5±0.2
●
0.8±0.2
7.2±0.3
■ Features
●
3.5±0.2
3.0±0.2
4.6±0.4
1:Base
2:Collector
3:Emitter
I Type Package (Y)
(TC=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = 100V, IE = 0
100
µA
Emitter cutoff current
IEBO
VEB = 15V, IC = 0
100
µA
Collector to emitter voltage
VCEO
IC = 25mA, IB = 0
60
Forward current transfer ratio
hFE*
VCE = 4V, IC = 1A
300
Collector to emitter saturation voltage
VCE(sat)
IC = 5A, IB = 0.1A
Transition frequency
fT
VCE = 12V, IC = 0.5A, f = 10MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
*h
FE
IC = 5A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
V
2000
0.5
50
V
MHz
µs
0.3
1.5
µs
0.6
µs
Rank classification
Rank
hFE
Q
P
300 to 1200 800 to 2000
1
Power Transistors
2SD1755
PC — Ta
IC — VCE
5
15
(1)
10
5
IB=10mA
9mA
8mA
4
7mA
6mA
3
5mA
4mA
2
3mA
2mA
1
1mA
(2)
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
10
12
IC/IB=50
3
25˚C
0.1
0.03
0.01
0.1
0.3
1
3
3000
TC=100˚C
1000
25˚C
–25˚C
300
100
30
10
0.01 0.03
10
0.1
0.3
1
3
0.01
0.1
0.3
1
Switching time ton,tstg,tf (µs)
300
100
30
10
3
VCE=12V
f=10MHz
TC=25˚C
300
100
30
10
3
1
10
3
tstg
1
tf
0.3
Collector to base voltage VCB (V)
0.1
0.3
1
3
10
Area of safe operation (ASO)
Non repetitive pulse
TC=25˚C
30
ton
0.1
ICP
10 I
C
t=1ms
10ms
3
300ms
1
0.3
0.1
0.03
0.01
0.01
100
10
100
0.03
30
3
Collector current IC (A)
Pulsed tw=1ms
Duty cycle=1%
IC/IB=50(IB1=–IB2)
VCC=50V
TC=25˚C
30
1000
10
0.03
0.1
0.01 0.03
10
ton, tstg, tf — IC
IE=0
f=1MHz
TC=25˚C
3
–25˚C
0.1
Collector current IC (A)
100
1
25˚C
0.3
Cob — VCB
0.3
0.3
VCE=4V
10000
1
0.1
TC=100˚C
fT — IC
30000
Collector current IC (A)
3000
1
Collector current IC (A)
Collector current IC (A)
100˚C
0.3
3
1000
10000
TC=–25˚C
1
IC/IB=50
hFE — IC
100000
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
8
10
Collector to emitter voltage VCE (V)
VBE(sat) — IC
10
6
Transition frequency fT (MHz)
0
Collector output capacitance Cob (pF)
Collector to emitter saturation voltage VCE(sat) (V)
TC=25˚C
(1) TC=Ta
(2) Without heat sink
(PC=1.3W)
0
2
VCE(sat) — IC
6
Collector current IC (A)
Collector power dissipation PC (W)
20
0
1
2
3
4
5
6
7
Collector current IC (A)
8
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Power Transistors
2SD1755
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
103
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
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2001 MAR