Power Transistors 2SD1748, 2SD1748A Silicon NPN triple diffusion planar type Darlington Unit: mm For low-freauency power amplification Complementary to 2SB1178 and 2SB1178A 7.0±0.3 High foward current transfer ratio hFE High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. Collector to 2SD1748 base voltage 2SD1748A Collector to 2SD1748 Ratings 60 VCBO +0.3 4.6±0.4 1 Unit 2 1:Base 2:Collector 3:Emitter I Type Package 3 V 80 7.0±0.3 V 4 A Collector current IC 2 A Ta=25°C 15 PC 3.0±0.2 2.5 0.75±0.1 W 1.3 Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C 3 2.3±0.2 Electrical Characteristics (TC=25˚C) Parameter Symbol Collector cutoff 2SD1748 current 2SD1748A Collector cutoff 2SD1748 current 2SD1748A ICBO ICEO IEBO Emitter cutoff current Collector to emitter 2SD1748 voltage 2SD1748A Forward current transfer ratio Conditions min 1 1 VCE = 30V, IB = 0 2 VCE = 40V, IB = 0 2 VEB = 5V, IC = 0 2 60 hFE1 VCE = 4V, IC = 1A 1000 VCE = 4V, IC = 2A 2000 VBE VCE = 4V, IC = 2A Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 8mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf FE2 Internal Connection Rank classification Rank hFE2 Q 2.5 VCC = 50V P 2000 to 5000 4000 to 10000 mA mA mA 10000 2.8 IC = 2A, IB1 = 8mA, IB2 = –8mA, Unit V 80 Base to emitter voltage *h max VCB = 80V, IB = 0 IC = 30mA, IB = 0 hFE2 typ 1:Base 2:Collector 3:Emitter I Type Package (Y) VCB = 60V, IE = 0 VCEO * 0.9±0.1 0 to 0.15 2 4.6±0.4 ■ 0.5 max. 1.1±0.1 1 Junction temperature 1.0 5 ICP 1.0 VEBO Peak collector current dissipation 0 to 0.15 1.0 max. Emitter to base voltage Collector power TC=25°C Unit: mm V 80 7.2±0.3 VCEO 3.5±0.2 2.0±0.2 10.2±0.3 emitter voltage 2SD1748A 60 2.5±0.2 Symbol 0.4±0.1 2.3±0.2 Absolute Maximum Ratings (TC=25˚C) Parameter 0.85±0.1 0.75±0.1 2.5±0.2 ■ 1.0±0.2 ● 1.1±0.1 10.0 –0. ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 V V 20 MHz 0.5 µs 4 µs 1 µs C B E 1 Power Transistors 2SD1748, 2SD1748A PC — Ta IC — VCE 10 TC=25˚C 15 (1) 10 5 4 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 3 2 0.4mA 0.2mA 1 TC=100˚C 25˚C –25˚C 6 4 2 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 1 2 3 4 5 6 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC TC=–25˚C 1 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 104 1000 TC=100˚C 103 25˚C –25˚C 102 0.1 0.3 1 3 Area of safe operation (ASO) ICP t=10ms IC 1ms 3 1 300ms 0.3 0.03 0.01 1 3 10 30 2SD1748A 2SD1748 0.1 100 300 Collector to emitter voltage VCE 1000 (V) 30 10 3 0.3 1 3 10 30 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10 100 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 100 Collector to base voltage VCB (V) 103 Non repetitive pulse TC=25˚C 300 1 0.1 10 Collector current IC (A) 100 30 3.2 IE=0 f=1MHz TC=25˚C 3000 10 0.01 0.03 10 Collector output capacitance Cob (pF) Forward current transfer ratio hFE 25˚C 2.4 Cob — VCB VCE=4V 10 1.6 10000 IC/IB=250 30 3 0.8 Base to emitter voltage VBE (V) 105 100 Collector current IC (A) Collector current IC (A) 8 (2) 0 2 VCE=4V Collector current IC (A) (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 5 Collector current IC (A) Collector power dissipation PC (W) 20 1 Time t (s) 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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