Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1176 7.0±0.3 ■ Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 (TC=25˚C) Symbol Ratings Unit 3.5±0.2 7.0±0.3 Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 10 A Collector current IC 5 A 0 to 0.15 dissipation Ta=25°C Junction temperature –55 to +150 ■ Electrical Characteristics 1.0 1.0 max. 7.2±0.3 1 150 Tstg Storage temperature 0.5 max. 1.1±0.1 2 3 ˚C ˚C 0.9±0.1 0 to 0.15 W 1.3 Tj 2.5 0.75±0.1 15 PC 10.2±0.3 3.0±0.2 Collector power TC=25°C Unit: mm 1.0 2.0±0.2 2.5±0.2 ● 0.85±0.1 0.75±0.1 2.5±0.2 ● 1.1±0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0 –0. ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 2.3±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Parameter Symbol Conditions min typ Unit 10 µA 50 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 80 hFE1 VCE = 2V, IC = 0.1A 45 hFE2* VCE = 2V, IC = 2A 90 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.2A 0.5 V Base to emitter saturation voltage VBE(sat) IC = 2A, IB = 0.2A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio *h FE2 VCB = 100V, IE = 0 max Collector cutoff current IC = 2A, IB1 = 0.2A, IB2 = – 0.2A, VCC = 50V V 260 30 MHz 0.5 µs 1.5 µs 0.15 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD1746 IC — VCE 5 Collector current IC (A) 15 (1) 10 5 IB=100mA 70mA 50mA 4 40mA 3 30mA 2 20mA 10mA 1 (2) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 6 3 TC=–25˚C 100˚C 25˚C 0.1 0.03 0.1 0.3 1 3 300 T =100˚C C 25˚C –25˚C 100 30 10 3 0.01 0.01 0.03 0.1 0.1 0.3 1 3 Switching time ton,tstg,tf (µs) 100 30 10 3 100 30 10 10 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 Area of safe operation (ASO) 3 tstg ton 1 tf 0.3 Non repetitive pulse TC=25˚C 30 0.1 ICP 10 t=10ms IC 3 1ms 300ms 1 0.3 0.1 0.03 0.01 0.01 100 10 100 0.03 30 3 Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C 30 300 1 300 1 0.01 0.03 10 ton, tstg, tf — IC 1000 0.3 VCE=10V f=10MHz TC=25˚C Collector current IC (A) IE=0 f=1MHz TC=25˚C 10 0.03 3 100 3 –25˚C 1000 Cob — VCB 1 25˚C 0.1 3000 1 0.01 0.03 10 10000 0.3 TC=100˚C 0.3 VCE=2V 3000 Collector current IC (A) 3000 1 fT — IC 1000 0.01 0.01 0.03 3 Collector current IC (A) Transition frequency fT (MHz) 10 0.3 10 10000 IC/IB=20 1 IC/IB=20 30 hFE — IC 30 1 0.1 5 10000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 4 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 Collector output capacitance Cob (pF) 3 Collector current IC (A) Collector power dissipation PC (W) TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 2 VCE(sat) — IC 6 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 20 0 1 2 3 4 Collector current IC (A) 5 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD1746 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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