Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1218A Unit: mm 2.1±0.1 ■ Features +0.1 0.3–0 0.65 1.3±0.1 0.65 3 Ratings Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 0.15–0.05 Symbol 0 to 0.1 Parameter 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : Z (Ta=25˚C) Parameter Symbol Collector cutoff current 1 2 (Ta=25˚C) Collector to base voltage ■ Electrical Characteristics 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 ● 0.9±0.1 ● 0.425 Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 0.1 µA 100 µA ICEO VCE = 10V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V hFE1 * VCE = 10V, IC = 2mA 160 hFE2 VCE = 2V, IC = 100mA 90 Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF Forward current transfer ratio *h FE1 460 0.3 V Rank classification Rank Q R S hFE1 160 ~ 260 210 ~ 340 290 ~ 460 Marking Symbol ZQ ZR ZS 1 2SD1819A Transistor PC — Ta IC — VCE 1200 Ta=25˚C 50 160 120 80 40 1000 140µA 40 120µA 100µA 30 80µA 60µA 20 40 60 80 100 120 140 160 2 4 6 8 10 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 200 Collector current IC (mA) 160 120 25˚C –25˚C 80 40 160 120 80 40 0 0 1.2 1.6 2.0 0 Base to emitter voltage VBE (V) 200 400 600 hFE — IC 1000 fT — I E Transition frequency fT (MHz) VCB=10V Ta=25˚C 500 400 Ta=75˚C 25˚C 300 –25˚C 200 100 0.3 1 3 10 30 Collector current IC (mA) 100 240 180 120 60 0 – 0.1 – 0.3 –1 –3 0.6 0.8 –10 –30 Emitter current IE (mA) 100 1.0 IC/IB=10 30 10 3 1 0.3 25˚C 0.1 Ta=75˚C –25˚C 0.03 0.01 0.1 0.3 1 3 10 30 Collector current IC (mA) 300 VCE=10V 0 0.1 800 Base current IB (µA) 600 0.4 VCE(sat) — IC 240 0.8 0.2 Base to emitter voltage VBE (V) IC — I B VCE=10V 0.4 0 Collector to emitter voltage VCE (V) 200 0 400 0 0 IC — VBE Ta=75˚C 600 200 20µA 0 20 800 40µA 10 Ambient temperature Ta (˚C) Collector current IC (mA) Base current IB (µA) 200 0 Forward current transfer ratio hFE VCE=10V Ta=25˚C IB=160µA 0 2 IB — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 240 –100 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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