Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type Unit: mm ■ Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2137 Collector to emitter voltage 2SD2137 Symbol Rating Unit VCBO 60 V 2SD2137A 60 2SD2137A 2.5±0.1 1.05±0.1 V Peak collector current ICP 5 A Collector current IC 3 A PC 15 W TC = 25°C Ta = 25°C 0.55±0.1 0.55±0.1 2.5±0.2 1 2 3 1: Emitter 2: Collector 3: Base MT-4 (MT4 Type Package) 80 6 Collector power dissipation 0.65±0.1 0.35±0.1 V VEBO C 1.0 2.25±0.2 0.65±0.1 2.5±0.2 Emitter to base voltage 1.2±0.1 1.48±0.2 80 VCEO 5.0±0.1 1.0±0.2 13.0±0.2 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 18.0±0.5 Solder Dip ■ Features 10.0±0.2 90˚ 4.2±0.2 For power amplification Complementary to 2SB1417 and 2SB1417A 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current 2SD2137 Collector cutoff current 2SD2137 Unit VCE = 60 V, VBE = 0 100 µA VCE = 80 V, VBE = 0 100 ICEO VCE = 30 V, IB = 0 100 VCE = 60 V, IB = 0 100 IEBO VEB = 6 V, IC = 0 100 VCEO IC = 30 mA, IB = 0 2SD2137A 2SD2137A Emitter cutoff current Collector to emitter voltage Max ICES 2SD2137 Conditions 2SD2137A Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Min Typ 60 µA µA V 80 hFE1 * VCE = 4 V, IC = 1 A 70 hFE2 VCE = 4 V, IC = 3 A 10 VBE VCE = 4 V, IC = 3 A 1.8 V IC = 3 A, IB = 0.375 A 1.2 V VCE(sat) 250 Transition frequency fT VCE = 5 V, IC = 0.2 A, f = 10 MHz 30 MHz Turn-on time ton IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A, 0.3 µs Storage time tstg VCC = 50 V 2.5 µs Fall time tf 0.2 µs Note) *: Rank classification Rank Q R hFE1 70 to 150 120 to 250 Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. 1 2SD2137, 2SD2137A Power Transistors IC VCE 5 15 (1) 10 5 IB=100mA 90mA 80mA 70mA 60mA 4 50mA 40mA 3 30mA 20mA 2 10mA 1 (2) 0 0 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 4 3 TC=100˚C 25˚C –25˚C 0 0.8 1.2 1.6 TC=100˚C 300 25˚C –25˚C 100 30 10 3 1 0.01 0.03 2.0 Cob VCB 0.3 1 3 IE=0 f=1MHz TC=25˚C 100 30 10 3 0.03 –25˚C 0.01 0.01 0.03 0.1 10 30 100 3 1 ton tf 0.1 Collector to base voltage VCB (V) 300 100 30 10 3 0.1 0.3 10 2 3 Collector current IC (A) 3 10 ICP 3 IC t=1ms 10ms 1 DC 0.3 0.1 0.01 1 1 Non repetitive pulse TC=25˚C 0.03 0 10 VCE=5V f=10MHz TC=25˚C 30 0.01 1 3 Area of safe operation (ASO) tstg 0.3 1 100 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C 30 0.3 Collector current IC (A) 0.03 10 25˚C 0.1 1 0.01 0.03 10 ton, tstg, tf IC Switching time ton,tstg,tf (µs) Collector output capacitance Cob (pF) 0.1 100 3 TC=100˚C 0.3 Collector current IC (A) 1000 1 1 1000 VCE=4V Base to emitter voltage VBE (V) 300 3 Collector current IC (A) Transition frequency fT (MHz) Forward current transfer ratio hFE Collector current IC (A) 5 0.4 10 fT I C VCE=4V 0 30 hFE IC 1000 1 IC/IB=8 Collector to emitter voltage VCE (V) IC VBE 6 2 12 100 2SD2137 20 Collector current IC (A) 0 2 Collector to emitter saturation voltage VCE(sat) (V) TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2.0W) Collector current IC (A) Collector power dissipation PC (W) VCE(sat) IC 6 4 1 3 10 30 2SD2137A PC T a 20 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD2137, 2SD2137A Rth(t) t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR