Power Transistors 2SD2133 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification driver Complementary to 2SB1413 ■ Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • Low collector to emitter saturation voltage VCE(sat) • Output of 15 W can be obtained by a complementary pair with 2SB1413 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings TC = 25°C Rating Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.8 C Collector to base voltage 0.4±0.1 0.5±0.1 Symbol 1 2 3 2.05±0.2 Parameter 0.8 C 1: Base 2: Collector 3: Emitter MT-3 (MT3 Type Package) 2.5±0.2 2.5±0.2 ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit 0.1 µA Collector cutoff current ICBO VCB = 20 V, IE = 0 Collector to base voltage VCBO IC = 10 µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2 mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 5 Forward current transfer ratio hFE1 * VCE = 10 V, IC = 500 mA 85 hFE2 VCE = 5 V, IC = 1 A 50 hFE3 VCE = 10 V, IC = 1 mA 35 V 340 100 Collector to emitter saturation voltage VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 V Base to emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.2 V VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 11 pF Transition frequency fT Collector output capacitance Cob Note) *: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 1 2SD2133 Power Transistors PC T a IC VCE Ta=25˚C IB=10mA 9mA 1.0 8mA 1.2 0.8 0.4 6mA 5mA 0.8 4mA 0.6 3mA 0.4 2mA 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 4 6 8 IC/IB=10 1 0.3 0.1 Ta=75˚C Ta=25˚C Ta=–25˚C 0.01 0.003 100 Base to emitter saturation voltage VBE(sat) (V) 10 12 0 0.001 10 Ta=–25˚C Ta=25˚C Ta=75˚C 3 10 30 100 300 0.1 1000 Collector current IC (mA) 100 80 60 40 20 100 –10 –20 –30 –50 –100 Emitter current IE (A) 200 Ta=75˚C Ta=25˚C 150 Ta=–25˚C 100 50 1000 10 1 20 15 10 5 1 10 1000 VCER RBE IE=0 f=1MHz Ta=25˚C 25 100 Collector current IC (mA) 0 –2 –3 –5 12 250 Cob VCB Collector output capacitance Cob (pF) 120 0 –1 10 30 140 10 VCE=10V Collector current IC (A) f T IE VCB=10V 180 f=200MHz TC=25˚C 160 8 0 1 200 6 hFE IC IC/IB=10 1 4 300 0.01 1 2 Base current IB (mA) 100 Collector to base voltage VCB (V) 100 Collector to emitter voltage VCER (V) Collector to emitter saturation voltage VCE(sat) (V) 2 VBE(sat) IC 3 0.03 0.4 Collector to emitter voltage VCE (V) VCE(sat) IC 10 0.6 0 0 Forward current transfer ratio hFE 20 0.8 0.2 1mA 0 0 Transition frequency fT (MHz) 1.0 7mA 0.2 0 VCE=10V Ta=25˚C Collector current IC (A) 1.6 Collector current IC (A) Collector power dissipation PC (W) Without heat sink 2 IC I B 1.2 1.2 2.0 IC=10mA TC=25˚C 80 60 40 20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) Power Transistors 2SD2133 ICBO Ta 104 Area of safe operation (ASO) 10 VCE=10V Single pulse TC=25˚C 3 Collector current IC (A) ICP ICBO (Ta) ICBO (Ta=25˚C) 103 102 10 1 IC t=10ms 0.3 DC 0.1 0.03 0.01 0.003 1 0 20 40 60 0.001 0.1 80 100 120 140 160 Ambient temperature Ta (˚C) 1 0.3 3 10 30 100 Collector to emitter voltage VCE (V) Rth(t) t Thermal resistance Rth(t) (˚C/W) 104 Without heat sink 103 102 10 1 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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