Power Transistors 2SD2136 Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1416 90˚ 10.8±0.2 ■ Features 4.5±0.2 3.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.4±0.1 Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 5 A Collector current IC 3 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.8 C 1 2 3 2.05±0.2 0.5±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter 0.8 C 1: Base 2: Collector 3: Emitter MT-3 (MT3 Type Package) 2.5±0.2 2.5±0.2 ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit ICES VCE = 60 V, VBE = 0 200 µA ICEO VCE = 60 V, IB = 0 300 µA IEBO VEB = 6 V, IC = 0 1 mA Collector to emitter voltage VCEO IC = 30 mA, IB = 0 60 Forward current transfer ratio hFE1 * VCE = 4 V, IC = 1 A 40 hFE2 VCE = 4 V, IC = 3 A 10 VBE VCE = 4 V, IC = 3 A 1.8 V IC = 3 A, IB = 0.375 A 1.2 V Collector cutoff current Emitter cutoff current Base to emitter voltage Collector to emitter saturation voltage VCE(sat) V 250 fT VCE = 5 V, IE = − 0.1 A, f = 200 MHz Turn-on time ton IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A Storage time tstg Fall time tf 0.4 µs Transition frequency 220 MHz 0.5 µs 2.5 µs Note) *: Rank classification Rank P Q R hFE1 40 to 90 70 to 150 120 to 250 1 2SD2136 Power Transistors PC T a IC VCE TC=25˚C 1.2 0.8 0.4 4 IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 3 30mA 2 20mA 1 6 –25˚C TC=100˚C 5 4 3 2 10mA 1 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 8 10 IC/IB=8 0 25˚C 1 –25˚C 0.3 0.1 0.03 0.1 0.3 1 3 300 VCE=4V 100 TC=100˚C 25˚C –25˚C 30 10 Collector current IC (A) 0.1 0.3 1 3 ICP t=100ms IC t=1s 1 0.3 t=10ms 0.1 0.03 0.01 0.1 0.3 1 3 10 30 150 100 50 0 –0.01 –0.03 –0.1 –0.3 10 100 Collector to emitter voltage VCE (V) –1 –3 Collector current IC (A) Rth(t) t Thermal resistance Rth(t) (˚C/W) 10 2.4 200 104 Single pulse TC=25˚C 30 2.0 VCB=10V f=200MHz TC=25˚C 250 Collector current IC (A) Area of safe operation (ASO) 100 1.6 3 1 0.01 0.03 10 1.2 fT I C Transition frequency fT (MHz) TC=100˚C 0.01 0.01 0.03 0.8 300 1000 10 3 0.4 Base to emitter voltage VBE (V) 3000 30 3 12 hFE IC 10000 Forward current transfer ratio hFE 100 6 Collector to emitter voltage VCE (V) VCE(sat) IC Collector current IC (A) 25˚C Collector current IC (A) 1.6 0 2 VCE=4V 7 Collector current IC (A) Collector power dissipation PC (W) Without heat sink Collector to emitter saturation voltage VCE(sat) (V) IC VBE 8 5 2.0 Without heat sink 103 102 10 1 10–1 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 –10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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