Transistor 2SD2240, 2SD2240A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 1.6±0.15 0.4 0.5 1 3 0.5 ● High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 ● 1.0±0.1 ● 0.8±0.1 +0.1 ■ Features 0.2–0.05 0.4 Collector to base voltage 2SD2240A Collector to 2SD2240 Ratings 150 VCBO 185 150 VCEO emitter voltage 2SD2240A Emitter to base voltage VEBO Peak collector current 185 Unit V V ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 ˚C Storage temperature Tstg –55 ~ +125 ˚C Symbol ICBO Collector to emitter 2SD2240 voltage 2SD2240A Emitter to base voltage 1:Base 2:Emitter 3:Collector +0.1 EIAJ:SC–75 SS–Mini Type Package Marking symbol : P(2SD2240) L(2SD2240A) (Ta=25˚C) Parameter Collector cutoff current 0.2±0.1 V 5 ■ Electrical Characteristics 0.15–0.05 Symbol 2SD2240 0 to 0.1 Parameter (Ta=25˚C) 0.45±0.1 0.3 ■ Absolute Maximum Ratings 0.75±0.15 2 Conditions min typ VCB = 100V, IE = 0 VCEO IC = 100µA, IB = 0 VEBO IE = 10µA, IC = 0 max Unit 1 µA 150 V 185 5 V Forward current transfer ratio hFE * VCE = 5V, IC = 10mA Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 2.3 pF Noise voltage NV 150 mV *1h FE1 VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 130 330 1 V Rank classification Marking Symbol Rank R S hFE 130 ~ 220 185 ~ 330 2SD2240 PR PS 2SD2240A LR LS 1 2SD2240, 2SD2240A Transistor PC — Ta IC — VCE 120 100 100 75 50 25 80 60 0.4mA 40 0.2mA 20 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 10 3 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 4 3 2 1 0 3 10 6 8 10 12 0 0.4 30 100 Collector to base voltage VCB (V) 0.8 1.2 200 500 400 Ta=75˚C 25˚C –25˚C 200 100 0 0.1 0.3 1 3 2.0 VCB=10V Ta=25˚C VCE=10V 300 1.6 Base to emitter voltage VBE (V) fT — I E 10 30 Collector current IC (mA) 5 1 4 600 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 30 0.1 40 hFE — IC IC/IB=10 0.3 60 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 –25˚C 0 0 Transition frequency fT (MHz) 40 Ta=75˚C 80 20 0 20 25˚C 100 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA Collector current IC (mA) 125 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 0 2 IC — VBE 120 Collector current IC (mA) Collector power dissipation PC (mW) 150 100 160 120 80 40 0 –1 –3 –10 –30 Emitter current IE (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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