Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm ● ■ Absolute Maximum Ratings * 0.5±0.08 1.5±0.1 Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 12 V Peak collector current ICP 1 A Collector current IC 0.5 A 1 W 150 ˚C –55 ~ +150 ˚C PC Junction temperature Tj Storage temperature Tstg +0.25 0.4±0.04 3.0±0.15 Parameter Collector power dissipation 0.4max. 0.4±0.08 (Ta=25˚C) * 45° 4.0–0.20 Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 ● 1.0–0.2 ● 2.6±0.1 ■ Features 2.5±0.1 1.5±0.1 4.5±0.1 1.6±0.2 3 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : IK Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ Unit 1 µA ICBO Collector to base voltage VCBO IC = 10µA, IE = 0 25 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 12 hFE1*1 VCE = 2V, IC = 0.5A*2 200 hFE2 VCE = 2V, IC = 1A*2 60 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 20mA Base to emitter saturation voltage VBE(sat) IC = 0.5A, IB = 50mA Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f= 1MHz ON resistanse Ron*3 Forward current transfer ratio VCB = 25V, IE = 0 max Collector cutoff current V 800 0.13 0.4 1.2 FE1 V 200 MHz 10 pF Ω 1.0 *2 *1h V *3R on Rank classification Pulse measurement Measurement circuit 1kΩ IB=1mA Rank R S T hFE1 200 ~ 350 300 ~ 500 400 ~ 800 Marking Symbol IKR IKS IKT VB VV VA f=1kHz V=0.3V VB Ron= ✕1000(Ω) VA–VB 1 2SD2210 Transistor PC — Ta IC — VCE IB=4.0mA 1.0 0.8 0.6 0.4 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 0.2 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 4 5 6 30 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.1 0.3 1 3 800 Ta=75˚C 600 25˚C –25˚C 400 200 0.1 0.3 1 3 10 Collector current IC (A) 1000 8 Ron measuring circuit IB=1mA 300 ON resistance Ron (Ω) 12 VB 100 V 30 VA f=1kHz V=0.3V 10 3 1 4 0.3 0 10 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 VCB=10V Ta=25˚C 350 300 250 200 150 100 0.1 0.01 0.03 0.1 0.3 1 3 Base current IB (mA) 0 –1 –3 –10 –30 Emitter current IE (mA) Ron — IB 16 3 Ta=75˚C 0.3 50 0 0.01 0.03 10 IE=0 Ta=25˚C f=1MHz 1 1 400 Cob — VCB 20 3 VCE=2V Collector current IC (A) 24 10 fT — I E 1000 10 0.01 0.01 0.03 30 Collector current IC (A) 1200 Forward current transfer ratio hFE IC/IB=10 1 IC/IB=25 hFE — IC 100 3 100 Collector to emitter voltage VCE (V) VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) 3 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Ta=25˚C 3.5mA 1.0 0 2 Collector to emitter saturation voltage VCE(sat) (V) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 VCE(sat) — IC 1.2 Collector current IC (A) Collector power dissipation PC (W) 1.4 10 –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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