ETC 2SD2249Q

Transistor
2SD2249
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
1.05 2.5±0.1
±0.05
1.0 1.0
14.5±0.5
+0.1
0.45–0.05
■ Absolute Maximum Ratings
*
0.65 max.
(Ta=25˚C)
2.5±0.5
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
40
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
8
A
Collector current
IC
5
A
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
1cm2
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
1
2.5±0.5
2
3
2.5±0.1
●
Low collector to emitter saturation voltage VCE(sat).
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
Allowing supply with the radial taping.
+0.1
●
0.45–0.05
●
(1.45)
0.8
0.2
■ Features
4.0
0.5
4.5±0.1
0.15
6.9±0.1
0.7
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
or more, and the board
0.65
max.
0.45+–0.1
0.05
(HW type)
■ Electrical Characteristics
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = 10V, IE = 0
0.1
µA
Emitter cutoff current
IEBO
VEB = 7V, IC = 0
0.1
µA
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
20
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
7
V
hFE1
Forward current transfer ratio
*1
VCE = 2V, IC =
0.5A*2
230
600
hFE2
VCE = 2V, IC = 2A*2
Collector to emitter saturation voltage
VCE(sat)
IC = 3A, IB = 0.1A*2
0.3
Transition frequency
fT
VCB = 6V, IE = –50mA, f = 200MHz*2
150
Collector output capacitance
Cob
VCB = 20V, IE = 0, f = 1MHz
150
1
50
*2
*1h
FE1
V
MHz
pF
Pulse measurement
Rank classification
Rank
Q
R
hFE1
230 ~ 380
340 ~ 600
1
2SD2249
Transistor
PC — Ta
IC — VCE
1.0
0.8
0.6
0.4
6
IB=7mA
2.0
0.2
6mA
5mA
4mA
1.2
3mA
0.8
2mA
60
80 100 120 140 160
Ambient temperature Ta (˚C)
0.4
3
1
Ta=75˚C
25˚C
–25˚C
0.03
0.01
0.003
0.1
0.3
1
0.8
1.2
1.6
2.0
2.4
3
30
10
3
25˚C
Ta=–25˚C
1
100˚C
0.3
0.1
0.03
0.01
0.01 0.03
10
0.1
0.3
1
3
10
Collector current IC (A)
fT — IE
100
Collector output capacitance Cob (pF)
VCB=6V
Ta=25˚C
350
300
250
200
150
100
50
IE=0
f=1MHz
Ta=25˚C
80
60
40
20
0
–3
Emitter current IE (A)
–10
1
3
10
0.8
1.2
1.6
2.0
600
VCE=2V
30
500
400
Ta=75˚C
300
25˚C
–25˚C
200
100
0
0.01 0.03
0.1
0.3
1
3
Collector current IC (A)
Cob — VCB
400
–1
0.4
Base to emitter voltage VBE (V)
IC/IB=30
Collector current IC (A)
0
– 0.01 – 0.03 – 0.1 – 0.3
0
hFE — IC
100
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=30
0.001
0.01 0.03
2
VBE(sat) — IC
10
0.1
3
Collector to emitter voltage VCE (V)
VCE(sat) — IC
0.3
4
0
0
Forward current transfer ratio hFE
40
–25˚C
1
1mA
0
20
25˚C
Ta=75˚C
5
1.6
0.4
0
Transition frequency fT (MHz)
VCE=2V
Ta=25˚C
Collector current IC (A)
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
0
2
IC — VBE
2.4
Collector current IC (A)
Collector power dissipation PC (W)
1.2
100
Collector to base voltage VCB (V)
10
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2001 MAR