Power Transistors 2SD2220 Silicon NPN triple diffusion planar type Darlington For low-frequency amplification Unit: mm ● ● Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward current transfer ratio hFE A shunt resistor is omitted from the driver Allowing supply with the radial taping ■ Absolute Maximum Ratings Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation (TC=25°C) PC 1.5 W Tj Tstg ■ Electrical Characteristics Parameter 3.8±0.2 0.85±0.1 1.0±0.1 150 ˚C –55 to +150 ˚C 0.8C 0.8C 0.7±0.1 0.7±0.1 0.5±0.1 Symbol Storage temperature 0.65±0.1 (TC=25˚C) Parameter Junction temperature 90° 2.5±0.1 ● 4.5±0.2 16.0±1.0 ■ Features 10.8±0.2 7.5±0.2 2.5±0.2 2.5±0.2 0.4±0.1 2.05±0.2 0.8C 1 2 1:Emitter 2:Collector 3:Base MT3 Type Package 3 Internal Connection C B E (TC=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 25V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 4V, IC = 0 100 nA Collector to base voltage VCBO IC = 100µA, IE = 0 100 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 80 V Emitter to base voltage VEBO IE = 100µA, IC = 0 5 Forward current transfer ratio hFE* VCE = 10V, IC = 1A 4000 Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = 1mA 1.8 V Base to emitter saturation voltage VBE(sat) IC = 1A, IB = 1mA 2.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz *h FE V 20000 150 MHz Rank classification Rank hFE Q R 4000 to 10000 8000 to 20000 1 Power Transistors 2SD2220 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Collector power dissipation PC (W) Without heat sink 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 120 140 160 IC/IB=1000 10 3 TC=–25˚C 1 100˚C 0.3 25˚C 0.1 0.03 0.01 0.01 Ambient temperature Ta (˚C) 0.03 0.1 0.3 Forward current transfer ratio hFE Collector output capacitance Cob (pF) VCE=10V 30000 25˚C TC=100˚C 3000 –25˚C 1000 300 100 0.01 IE=0 f=1MHz TC=25˚C 20 0.1 0.3 1 3 16 12 8 4 1 3 10 30 IC/IB=1000 10 3 TC=–25˚C 1 25˚C 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 Collector current IC (A) 0 0.03 Collector current IC (A) 2 3 Cob — VCB 24 10000 1 Collector current IC (A) hFE — IC 100000 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) PC — Ta 2.0 100 Collector to base voltage VCB (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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