Power Transistors 2SD2222 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB1470 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO 160 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO 5 V Peak collector current ICP 15 A Collector current IC 8 A PC 150 W Collector to base voltage Collector power dissipation TC = 25°C Ta = 25°C (2.0) (1.5) (1.5) 2.0±0.3 20.0±0.5 (2.5) Solder Dip (1.5) • Optimum for 120 W Hi-Fi output • High forward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) φ 3.3±0.2 (3.0) 26.0±0.5 ■ Features 5.0±0.3 (3.0) (10.0) (6.0) (2.0) (4.0) 20.0±0.5 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 1 2 1: Base 2: Collector 3: Emitter TOP-3L Package 3 Internal Connection 3.5 C Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B E ■ Electrical Characteristics TC = 25°C Parameter Symbol Max Unit ICBO VCB = 160 V, IE = 0 100 µA ICEO VCE = 160 V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 5 V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 30 mA, IB = 0 160 Forward current transfer ratio hFE1 VCE = 5 V, IC = 1 A 10 000 hFE2 * VCE = 5 V, IC = 7 A 3 500 Collector to emitter saturation voltage VCE(sat) IC = 7 A, IB = 7 mA 3 V Base to emitter saturation voltage VBE(sat) IC = 7 A, IB = 7 mA 3 V Collector cutoff current Conditions Min Typ V 20 000 Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = 7 A, IB1 = 7 mA, IB2 = −7 mA, 2 µs Storage time tstg VCC = 50 V 6 µs Fall time tf 1.2 µs Note) *: Rank classification Rank hFE2 Q P 3 500 to 10 000 7 000 to 20 000 1 2SD2222 Power Transistors IC VCE (1) 9 IB=1.0mA Collector current IC (A) 140 120 100 80 60 8 0.9mA 7 0.8mA 6 0.7mA 5 0.6mA 4 3 40 2 20 (2) (3) 0 0 20 1 0.5mA 0.4mA 0.3mA 0 40 60 80 100 120 140 160 0 2 4 6 VBE(sat) IC 12 14 16 TC=–25˚C 25˚C 125˚C 0.3 0.1 0.03 0.3 1 3 10 30 104 TC=125˚C 25˚C 102 10 0.03 100 0.3 1 3 10 30 Area of safe operation (ASO) Non repetitive pulse TC=25˚C 30 Collector current IC (A) ICP tstg 3 ton 1 tf 0.3 0.1 0.03 IC 10 t=1ms 10ms 3 DC 1 0.3 0.1 0.03 0.01 0.01 0 2 4 6 8 1 TC=–25˚C 25˚C 125˚C 0.3 0.1 0.03 0.01 0.1 0.3 10 Collector current IC (A) 12 1 3 10 30 100 1 3 10 30 100 300 IE=0 f=1MHz TC=25˚C 103 102 10 1 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) 100 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (–IB1=IB2) VCC=50V TC=25˚C 10 0.1 Collector current IC (A) ton, tstg, tf IC 30 –25˚C 103 Collector current IC (A) 100 3 Cob VCB VCE=5V 10 0.01 0.1 10 104 IC/IB=1000 1 30 hFE IC 30 3 IC/IB=1000 Collector current IC (A) 105 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 10 100 Collector to emitter voltage VCE (V) 100 Switching time ton,tstg,tf (µs) 8 Collector output capacitance Cob (pF) Collector power dissipation PC (W) 160 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) 180 Ambient temperature Ta (˚C) 2 VCE(sat) IC 10 Collector to emitter saturation voltage VCE(sat) (V) PC T a 200 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD2222 Rth(t) t Thermal resistance Rth(t) (˚C/W) 104 (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 103 102 (1) 10 (2) 0 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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