Transistor 2SD2459 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 ■ Absolute Maximum Ratings * (Ta=25˚C) 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 2E or more, and the board (Ta=25˚C) Parameter Symbol Conditions min typ Unit 0.1 µA ICBO Collector to base voltage VCBO IC = 10µA, IE = 0 150 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 150 V Emitter to base voltage VEBO IE = 10µA, IC = 0 hFE1*1 VCE = 2V, IC = 100mA 120 hFE2 VCE = 2V, IC = 500mA 40 VCE(sat) IC = 500mA, IB = 25mA*2 0.11 0.3 Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 25mA*2 0.8 1.2 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 90 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 12 Forward current transfer ratio Collector to emitter saturation voltage VCB = 75V, IE = 0 max Collector cutoff current 5 V 340 FE1 V MHz 20 *2 *1h V pF Pulse measurement Rank classification Rank R S hFE1 120 ~ 240 170 ~ 340 Marking Symbol 2ER 2ES 1 2SD2459 Transistor Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 1.0 0.8 0.6 0.4 1000 IB=8mA 800 7mA 6mA 5mA 600 4mA 3mA 400 2mA 200 0.2 1mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 10 3 25˚C Ta=–25˚C 100˚C 0.3 0.1 0.03 1 3 10 Collector current IC (A) Collector output capacitance Cob (pF) Ta=25˚C f=1MHz IE=0 50 40 30 20 10 0 1 3 10 1 0.3 Ta=100˚C 25˚C 0.1 –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 Collector current IC (A) fT — I E 200 400 300 Ta=100˚C 200 25˚C –25˚C 100 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Cob — VCB 60 3 VCE=2V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.3 12 500 IC/IB=20 0.1 10 IC/IB=20 hFE — IC 100 0.01 0.01 0.03 8 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 1 6 Transition frequency fT (MHz) 0 2 VCE(sat) — IC Ta=25˚C Collector current IC (mA) Collector power dissipation PC (W) IC — VCE 1200 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.4 10 Ta=25˚C VCB=10V 160 120 80 40 0 –1 –3 –10 –30 Emitter current IE (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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