2SD2485 Silicon NPN Epitaxial Application TO-92MOD. Low frequency power amplifier Features • Low saturation voltage VCE(sat) = 0.1 V typ. (at IC = 1 A, IB = 50 mA) • Large current capacitance IC = 2 A 3 2 1 1. Emitter 2. Collector 3. Base Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to base voltage VCBO 80 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 80 V ——————————————————————————————————————————— Emitter to base voltage VEBO 6 V ——————————————————————————————————————————— Collector current IC 2 A ——————————————————————————————————————————— Collector peak current ic(peak)* 3 A ——————————————————————————————————————————— Collector power dissipation PC 0.9 W ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— Note: * PW ≤ 10 ms, duty cycle ≤20 % 2SD2485 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 80 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 80 — — V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO 6 — — V IE = 10 µA IC = 0 ——————————————————————————————————————————— Collector to base cutoff current ICBO — — 1.0 µA VCB = 65 V, IE = 0 ——————————————————————————————————————————— Collector to emitter cutoff current ICEO — — 5.0 µA VCE = 65 V, RBE = ∞ ——————————————————————————————————————————— Emitter to base cutoff current IEBO — — 1.0 µA VEB = 5 V, IC = 0 ——————————————————————————————————————————— DC current transfer ratio hFE1 120 — 300 VCE = 2 V, IC = 0.5 A ——————————————————————————————————————————— DC current transfer ratio hFE2 40 — — VCE = 2 V, IC = 1.5 A ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) — 0.1 0.2 V IC =1 A IB = 50 mA ——————————————————————————————————————————— Base to emitter saturation voltage VBE(sat) — — 1.2 V IC =1 A IB = 50 mA ——————————————————————————————————————————— 2SD2485 Area of Safe Operation 10 3 I C (A) 1.2 Collector Current Collector Power Dissipation Pc (W) Maximum Collector Power Dissipation Curve 1.6 0.8 0.4 DC 0.3 9 0. W 0.8 2 mA 0.4 Tc = 25 °C 0 4 mA IB=0 0.4 0.8 1.2 1.6 2.0 Collector to Emitter Voltage V CE (V) m at ion Ta = 25 °C 1 shot pulse 0.1 0.3 1 3 10 30 100 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current h FE 1000 75 °C 300 DC Current Transfer Ratio I C (A) 6 mA = 1.2 10 0.01 200 mA mA 18 mA 16 A 14 m A 12 m A 10 m 8 mA Pc 1.6 Collector Current 20 s = 0.03 Typical Output Characteristics 2.0 1m s Op er 0.1 0.001 50 100 150 Ambient Temperature Ta (°C) PW 1 I C(max) 0.003 0 ic(peak) 100 25 °C Ta = –25 °C 30 10 0.003 Pulse test VCE = 2 V 0.01 0.03 0.1 Collector Current 0.3 I C (A) 1 3 2SD2485 Collector to Emitter Saturation Voltage vs. Base Current 10 3 1 Ta=–25°C VBE(sat) 25°C 0.3 Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Saturation Voltage vs. Collector Current 75°C 25°C 75°C 0.1 V CE(sat) Ta=–25°C I C= 2 A 1A 0.1 Pulse test I C = 20 I B 0.003 0.003 1 0.3 0.03 0.01 Pulse test Ta = 25 °C 3 0.5 A 0.03 0.01 0.01 0.03 0.1 0.3 1 1 3 Collector Current I C (A) Collector Output Capacitancet Cob (pF) Gain Bandwidth Product f T (MHz) 100 30 Pulse test VCE = 2 V Ta = 25 °C 0.01 0.3 0.1 Collector Current 0.3 I C (A) 1 100 300 1000 100 300 1 0.03 30 Collector Output Capacitance vs. Collector to Base Voltage 1000 3 10 Base Current I B (mA) Gain Bandwidth Product vs. Collector Current 10 3 3 30 10 3 IE =0 f = 1 MHz Ta = 25 °C 1 1 3 10 30 100 Collector to Base Voltage VCB (V) 2SD2485 Typical Transfer Characteristics I C (A) 1.6 Collector Current 2.0 1.2 0.8 0.4 0 Pulse test VCE = 2 V Ta = 25 °C 0.2 0.4 0.6 0.8 Base to Emitter Voltage V BE (V) 1.0