2SD2415 Silicon NPN Epitaxial Application TO-92 (1) Low frequency power amplifier Features 1. Emitter 2. Collector 3. Base • The transistor with a built–in zener diode of surge absorb. • The design is resist to electro magnetic interferance. • High resist design of unnecessary zener diode. 3 2 Table 1 Ordering Information Type No 2 1 hFE1 3 ———————————————————— 2SD2415B 60 to 120 ———————————————————— 2SD2415C 1 100 to 200 ———————————————————— 2SD2415D 160 to 320 ———————————————————— Table 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to base voltage VCBO 25 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 25 V ——————————————————————————————————————————— Emitter to base voltage VEBO 6 V ——————————————————————————————————————————— Collector current IC 0.5 A ——————————————————————————————————————————— Collector peak current iC(peak) 1 A ——————————————————————————————————————————— Collector power dissipation PC 0.5 W ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— 2SD2415 Table 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 25 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 25 — 35 V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Collector to emitter sustain voltage VCEO(sus) 26 — — V IC = 0.5 A, RBE = ∞, L = 20 mH ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO 6 — — V IE = 10 µA, IC = 0 ——————————————————————————————————————————— Collector cutoff current ICBO — — 0.2 µA VCB = 20 V, IE = 0 ——————————————————————————————————————————— Collector cutoff current ICEO — — 0.5 µA VCE = 20 V, RBE = ∞ ——————————————————————————————————————————— Collector cutoff current IEBO — — 0.2 µA VEB = 5 V, IC = 0 ——————————————————————————————————————————— DC current transfer ratio 2SD2415B VCE = 2 V, IC = 50 mA hFE1* ————— 60 — 120 —————————— 2SD2415C 100 ————— —————————— — 2SD2415D 160 — 200 320 ——————————————————————————————————————————— DC current transfer ratio hFE2* 10 — — VCE = 2 V, IC = 0.5 A ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat)* — — 0.5 V IC = 0.5 A, IB = 50 mA ——————————————————————————————————————————— Base to emitter saturation voltage VBE(sat)* — — 1.2 V IC = 0.5 A, IB = 50 mA ——————————————————————————————————————————— Note: Pulse test Maximum Collector Power Dissipation Curve 0.8 (A) IC C 0.1 n 0.03 0.01 DC Current Transfer Ratio vs. Collector Current h FE I C (mA) 1 mA 200 0.5 mA Pc = 0.5 W IB = 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio Collector Current 1.5 mA 300 0 Ta = 25°C 1 shot pulse 0.003 0.1 1 10 100 Cellector to Emitter Voltage V CE (V) 300 Ta = 25°C ra VCE = 3 V 2 mA 100 pe 1000 A 2.5 m 400 O tio Typical Output Characteristics 500 D s Collector Current 0.3 m 50 100 150 200 Ambient Temperature Ta (°C) 10 0.2 = 0.4 0 1 s 1m 0.6 Collector Power Dissipation Area of Safe Operation 3 Pw Pc (W) 2SD2415 Ta = 75°C 25°C 100 –25°C 30 10 1 3 10 30 100 300 1000 Collector Current I C (mA) 2SD2415 Base to Emitter Saturation Voltage vs. Collector Current 1 10 I C = 10 I B Base to Emitter Saturation Voltage V BE(sat) (V) Collector to Emitter Saturation Voltage V CE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current 0.3 0.1 75°C 3 Ta = –25°C 1 25°C 0.01 1 Ta = –25°C 0.1 1 3 10 30 100 300 1000 Collector Current I C (mA) 1000 Collector Current Ta = –25°C 25°C 75°C 10 3 0.4 0.8 1.2 Base to Emitter Voltage 1.6 2.0 V BE (V) Gain Bandwidth Product f T (MHz) I C (mA) 300 1 0 3 10 30 100 300 1000 Collector Current I C (mA) 1000 VCE = 2 V 30 I C = 10 I B Gain Bandwidth Product vs. Collector Current Collector Current vs. Base to Emitter Voltage 100 75°C 0.3 0.03 25°C VCE = 2 V Ta = 25°C 300 100 30 10 1 3 10 30 100 300 1000 Collector Current I C (mA) 2SD2415 Collector Output Capacitance vs. Collector to Base Voltage Emitter Input Capacitance vs. Emitter to Base Voltage Emitter Input Capacitance Cib (pF) 100 30 10 3 0.1 f = 1 MHz IC = 0 Ta = 25°C 0.3 1 Emitter to Base Voltage 10 3 V EB (V) Collector Output Capacitance Cob (pF) 100 300 30 10 3 1 1 f = 1 MHz IE = 0 Ta = 25°C 3 10 100 30 Collector to Base Voltage V CB (V)