2SD2533 Silicon NPN Epitaxial Application Low frequency power amplifier UPAK Features • Low saturation voltage VCE(sat) ≤ 0.2 V • Large current capacitance. IC = 2 A 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to base voltage VCBO 80 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 80 V ——————————————————————————————————————————— Emitter to base voltage VEBO 6 V ——————————————————————————————————————————— Collector current IC 2 A ——————————————————————————————————————————— Collector peak current ic(peak)* 3 A ——————————————————————————————————————————— Collector power dissipation PC** 1 W ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 ms, duty cycle ≤ 20 % ** When using the alumina ceramic board (12.5 x 20 x 0.7 mm) Note: Marking is "KS" Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. 2SD2533 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 80 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 80 — — V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO 6 — — V IE = 10 µA IC = 0 ——————————————————————————————————————————— Collector to base cutoff current ICBO — — 1 µA VCB = 65 V, IE = 0 ——————————————————————————————————————————— Collector to emitter cutoff current ICEO — — 5 µA VCE = 65 V, RBE = ∞ ——————————————————————————————————————————— Emitter to base cutoff current IEBO — — 1 µA VEB = 5 V, IC = 0 ——————————————————————————————————————————— DC current transfer ratio hFE1* 120 — 300 VCE = 2 V, IC = 0.5 A ——————————————————————————————————————————— DC current transfer ratio hFE2* 40 — — VCE = 2 V, IC = 1.5 A ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat)* — 0.11 0.2 V IC =1 A IB = 50 mA ——————————————————————————————————————————— Base to emitter saturation voltage VBE(sat)* — 0.85 1.2 V IC =1 A IB = 50 mA ——————————————————————————————————————————— Gain bandwidth product fT — 160 — MHz VCE = 2 V, IC = 50 mA ——————————————————————————————————————————— Collector output capacitance Cob — 20 — pF VCB = 10 V IE = 0 f = 1 MHz ——————————————————————————————————————————— * Pulse Test 2SD2533 5 I C (A) Collector Current 1.0 0.5 1 0.5 0.2 0.1 0.05 0.02 0.01 0 50 100 150 Ambient Temperature Ta (°C) 200 s 1m s 0m =1 PW n tio ra pe O 1.5 Area of Safe Operation ic (peak) I 2 C (max) C D Collector Power Dissipation Pc (W) Maximum Power Dissipation Curve 2.0 Ta = 25 °C 1 shot pulse 0.005 0.1 0.3 1 3 10 Collector to Emitter Voltage 30 100 V CE (V) ** When using the alumina ceramic board (12.5 x 20 x 0.7 mm) Typical Output Characteristics 6 mA 4 mA 0.8 2 mA 0.4 Ta = 25 °C 0 I C (A) 1.2 Typical Transfer Characteristics 2.0 mA 20 8 mA 1 6 mA 1 A 14 m mA 12 A 10 m m 8 A 1.6 Collector Current I C (A) 1.6 Collector Current 2.0 1.2 V CE = 2 V Ta = 25 °C Ta = 75 °C 25 °C 0.8 –25 °C 0.4 IB=0 0.4 0.8 1.2 1.6 2.0 Collector to Emitter Voltage V CE (V) 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage V BE (V) 2SD2533 Collector to Emitter Saturation Voltage vs. Base Current DC Current Transfer Ratio vs. Collector Current 10 500 75 °C Collector to Emitter Saturation Voltage VCE(sat) (V) DC Current Transfer Ratio hFE 1000 25 °C 200 Ta = 25 °C Pulse test 5 2 1 0.5 100 Ta = –25 °C IC=2A 0.2 50 1A 0.1 0.5 A 0.05 20 VCE = 2 V Pulse test 10 0.02 0.01 0.005 0.01 0.03 0.1 0.3 Collector Current 1 1 3 5 Gain Bandwidth Product f T (MHz) Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) 1 50 100 200 500 1000 1000 Pulse test I C = 20 I B –25 °C 10 20 Gain Bandwidth Product vs. Collector Current 10 2 5 Base Current I B (mA) I C (A) Saturation Voltage vs. Collector Current 5 2 VBE(sat) 25 °C 0.5 Ta = 75 °C 0.2 0.1 V CE(sat) 25 °C 0.05 75 °C 0.02 Ta = –25 °C 0.01 0.01 0.02 0.05 0.1 0.2 500 200 100 50 20 Pulse Test V CE = 6 V 10 0.5 1 2 Collector Current I C (A) 5 10 0.01 0.02 0.05 0.1 0.2 0.5 Collector Current I C (A) 1 2SD2533 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 500 IE =0 f = 1 MHz 200 100 50 20 10 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) Package Dimensions Unit : mm 4.5 ± 0.1 φ 1.0 0.53 max 0.48 max 1 2 1.5 1.5 3.0 3 0.8 min 4 1.5 ± 0.1 0.44 max 2.5 ± 0.1 4.25 max 0.4 1.8 max 0.44 max Hitachi Code EIAJ JEDEC UPAK SC–62 UPAK 2SD2533 Package Dimensions Unit : mm 4.5 ± 0.1 φ 1.0 0.53 max 0.48 max 1 2 1.5 1.5 3.0 3 0.8 min 4 1.5 ± 0.1 0.44 max 2.5 ± 0.1 4.25 max 0.4 1.8 max 0.44 max Hitachi Code EIAJ JEDEC UPAK SC–62 UPAK