Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed: EAS > 90mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 30ns ● No secondary breakdown 16.7±0.3 4.2±0.2 2.7±0.2 φ3.1±0.1 4.0 14.0±0.5 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply 5.5±0.2 1.4±0.1 Solder Dip ■ Applications 0.8±0.1 Symbol Ratings Unit V VDSS 500 Gate to Source voltage VGSS ±30 V DC ID ±2.5 A Pulse IDP ±5 A 15.6 mJ Avalanche energy capacity Allowable power TC = 25°C dissipation Ta = 25°C Channel temperature Storage temperature * 2.54±0.25 Drain to Source breakdown voltage Drain current EAS* 40 PD 1.3±0.2 0.5 +0.2 –0.1 ■ Absolute Maximum Ratings (TC = 25°C) Parameter 4.2±0.2 10.0±0.2 7.5±0.2 0.7±0.1 unit: mm 5.08±0.5 1 1: Gate 2: Drain 3: Source EIAJ: SC-67 TOP-220 Full Pack Package (a) 2 3 W 2 Tch 150 °C Tstg −55 to +150 °C L = 5mH, IL = 2.5A, VDD = 50V, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 400V, VGS = 0 0.1 mA Gate to Source leakage current IGSS VGS = ±30V, VDS = 0 ±1 µA Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 Gate threshold voltage Vth VDS = 25V, ID = 1mA Drain to Source ON-resistance RDS(on) VGS = 10V, ID = 1.5A Forward transfer admittance | Yfs | VDS = 25V, ID = 1.5A Diode forward voltage VDSF IDR = 2.5A, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 20V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss Turn-on time ton Fall time tf Turn-off time (delay time) td(off) Thermal resistance between channel and case Rth(ch-c) VGS = 10V, ID = 1.5A VDD = 150V, RL = 100Ω 500 V 2 3.2 1 5 V 4 Ω 1.5 S −1.5 V 330 pF 55 pF 20 pF 40 ns 30 ns 55 ns 3.125 °C/W 1 Power F-MOS FETs 2SK1833 ID VDS | Yfs | ID 3.0 7V 6.5V 2.5 2.0 6V 1.5 1.0 5.5V 0.5 VDS=25V TC=25˚C 2.5 2.0 1.5 1.0 0.5 5V 0 0 0 10 20 30 40 50 0 1 Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 3 2 1 0 4 6 8 10 Ciss 100 30 Coss 10 Crss 50 100 150 200 Non repetitive pulse TC=25˚C 30 Drain current ID (A) 6 60 ton td(off) 40 tf 20 0 1 2 3 4 5 Drain current ID (A) EAS Tj 24 10 IDP t=100µs 3 ID DC 1 0.3 1ms 10ms 0.1 (2) 0.01 Ambient temperature Ta (˚C) 5 80 Area of safe operation (ASO) 100ms 80 100 120 140 160 100 250 0.03 60 4 VDD=150V VGS=10V TC=25˚C Drain to source voltage VDS (V) 10 0 3 0 1 40 20 2 3 0 (1) TC=Ta (2) Without heat sink (PD=2W) (1) 1 ton, tf, td(off) ID 100 40 0 120 300 12 PD Ta 20 2 Drain current ID (A) 3000 50 0 4 VDS=20V f=1MHz Gate to source voltage VGS (V) 30 6 0 Switching time ton,tf,td(off) (ns) 4 2 8 5 1000 0 VGS=10V TC=25˚C 10 Ciss, Coss, Crss VDS 5 Drain current ID (A) 4 10000 VDS=25V TC=25˚C Allowable power dissipation PD (W) 3 12 Drain current ID (A) ID VGS 6 2 2 1 3 10 30 100 300 1000 Drain to source voltage VDS (V) Avalanche energy capacity EAS (mJ) Drain current ID (A) Forward transfer admittance |Yfs| (S) TC=25˚C VGS=10V Drain to source ON-resistance RDS(on) (Ω) 3.0 RDS(on) ID ID=2.5A VDD=50V 20 16 12 8 4 0 25 50 75 100 125 150 Junction temperature Tj (˚C) Power F-MOS FETs 2SK1833 IDR VDSF Rth(t) t VGS=0 TC=25˚C Drain reverse current IDR (A) 30 10 3 1 0.3 0.1 0.03 0.01 0 0.5 1.0 1.5 Thermal resistance Rth(t) (˚C/W) 1000 100 2.0 100 Notes: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A(2W) and without heat sink (2) PT=10V × 1.0A(10W) and with a 100 × 100 × 2mm Al heat sink (1) (2) 10 1 0.1 10–4 Diode forward voltage VDSF (V) 10–3 10–2 10–1 1 Switching measurement circuit PG RG 102 103 104 Avalanche energy capacity test circuit RL D.U.T 10 Time t (s) L D.U.T VDD PG VDD RG 3