Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown 16.7±0.3 4.2±0.2 2.7±0.2 φ3.1±0.1 4.0 14.0±0.5 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply 5.5±0.2 1.4±0.1 Solder Dip ■ Applications 0.8±0.1 Symbol Ratings Unit V VDSS 800 Gate to Source voltage VGSS ±30 V DC ID ±2 A Pulse IDP ±4 A EAS* 15 mJ Avalanche energy capacity Allowable power TC = 25°C dissipation Ta = 25°C Channel temperature Storage temperature * 2.54±0.25 Drain to Source breakdown voltage Drain current 40 PD 1.3±0.2 0.5 +0.2 –0.1 ■ Absolute Maximum Ratings (TC = 25°C) Parameter 4.2±0.2 10.0±0.2 7.5±0.2 0.7±0.1 unit: mm 5.08±0.5 1 1: Gate 2: Drain 3: Source EIAJ: SC-67 TOP-220 Full Pack Package (a) 2 3 W 2 Tch 150 °C Tstg −55 to +150 °C L = 7.5mH, IL = 2A, VDD = 50V, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 640V, VGS = 0 0.1 mA Gate to Source leakage current IGSS VGS = ±30V, VDS = 0 ±1 µA Drain to Source breakdown voltage VDSS ID = 1mA, VDS = 0 Gate threshold voltage Vth VDS = 25V, ID = 1mA Drain to Source ON-resistance RDS(on) VGS = 10V, ID = 1A Forward transfer admittance | Yfs | VDS = 25V, ID = 1A Diode forward voltage VDSF IDR = 2A, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 20V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss Turn-on time ton Fall time tf Turn-off time (delay time) td(off) Thermal resistance between channel and case Rth(ch-c) VGS = 10V, ID = 1A VDD = 200V, RL = 200Ω 800 V 2 4.8 0.7 5 V 7 Ω 1.1 S −1.3 V 350 pF 60 pF 25 pF 35 ns 25 ns 60 ns 3.125 °C/W 1 Power F-MOS FETs 2SK1834 ID VDS | Yfs | ID VGS=15V 10V 2.5 7.0V 2.0 6.5V 1.5 6.0V 1.0 5.5V 40W 0.5 5.0V 2.0 1.5 1.0 0.5 0 0 0 10 20 30 40 50 60 0 0.5 Drain to source voltage VDS (V) 2.0 2.0 1.5 1.0 0.5 0 2 4 6 8 10 Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 2.5 0 4 2 0 Coss Crss 10 3 50 100 150 Non repetitive pulse TC=25˚C 30 10 IDP t=100µs 3 ID 1 0.3 1ms 10ms 0.1 100ms DC (2) 0.01 Ambient temperature Ta (˚C) 100 5 80 60 td(off) 40 ton tf 20 200 0.03 80 100 120 140 160 4 0 0.5 1.0 1.5 2.0 2.5 Drain current ID (A) EAS Tj 30 10 0 3 VDD=200V VGS=10V TC=25˚C Area of safe operation (ASO) Drain current ID (A) 20 2 0 1 40 (1) 1 120 Drain to source voltage VDS (V) (1) TC=Ta (2) Without heat sink (PD=2W) 60 15V 0 100 40 VGS=10V 6 ton, tf, td(off) ID 30 0 PD Ta 20 8 Drain current ID (A) 100 12 50 0 10 2.5 f=1MHz TC=25˚C Ciss 300 Gate to source voltage VGS (V) 30 TC=25˚C Ciss, Coss, Crss VDS 1000 VDS=25V TC=25˚C Drain current ID (A) 1.5 12 Drain current ID (A) ID VGS 3.0 Allowable power dissipation PD (W) 1.0 Switching time ton,tf,td(off) (ns) 3.0 VDS=25V TC=25˚C 1 3 10 30 100 300 1000 Drain to source voltage VDS (V) Avalanche energy capacity EAS (mJ) Drain current ID (A) 3.5 Forward transfer admittance |Yfs| (S) TC=25˚C Drain to source ON-resistance RDS(on) (Ω) 2.5 4.0 2 RDS(on) ID ID=2A 25 20 15 10 5 0 25 50 75 100 125 150 Junction temperature Tj (˚C) Power F-MOS FETs 2SK1834 700 14 600 12 500 10 VDS 400 VGS 8 300 6 200 4 100 2 0 0 5 10 15 20 Gate to source voltage VGS (V) Drain to source voltage VDS (V) VDS, VGS Qg 0 25 Gate charge amount Qg (nC) Switching measurement circuit Avalanche energy capacity test circuit RL D.U.T PG RG L D.U.T VDD PG VDD RG 3