2SK2330 L , 2SK2330 S Silicon N Channel MOS FET Application HDPAK 4 High speed power switching Features • • • • 4 1 2 Low on–resistance High speed switching No secondary breakdown Suitable for Switching regulator, DC – DC converter 3 2, 4 1 1 3 1. 2. 3. 4. 2 3 Gate Drain Source Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 500 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 15 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 60 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 15 A ——————————————————————————————————————————— Channel dissipation Pch** 100 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 2SK2330 L , 2SK2330 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 500 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.3 0.4 Ω ID = 8 A VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 8 13 — S ID = 8 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2050 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 600 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 75 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = 8 A ———————————————————————————————— Rise time tr — 110 — ns ———————————————————————————————— Turn–off delay time td(off) — 150 — ns VGS = 10 V RL = 3.75 Ω ———————————————————————————————— Fall time tf — 70 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — 1.0 — V IF = 15 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 500 — µs IF = 15 A, VGS = 0, diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1168. 2SK2334 L , 2SK2334 S Silicon N Channel MOS FET Application DPAK–2 4 High speed power switching 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings 12 2, 4 12 3 3 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 80 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 20 A ——————————————————————————————————————————— Avalanche current IAP*** 20 A ——————————————————————————————————————————— Avalanche energy EAR*** 34 mJ ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 2SK2334 L , 2SK2334 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 100 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.04 0.055 Ω ID = 10 A VGS = 10 V * ———————————————————————— — 0.055 0.07 Ω ID = 10 A VGS = 4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 9 15 — S ID = 10 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 980 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 440 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 135 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 14 — ns ID = 10 A ———————————————————————————————— Rise time tr — 90 — ns ———————————————————————————————— Turn–off delay time td(off) — 180 — ns VGS = 10 V RL = 3 Ω ———————————————————————————————— Fall time tf — 125 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — 1.0 — V IF = 20 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 90 — µs IF = 20 A, VGS = 0, diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2SK2334 L , 2SK2334 S Power vs. Temperature Derating 30 20 10 I D (A) 100 50 Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 200 40 10 10 20 DC Op this area is limited by R DS(on) 2 s 0m tio s 1m =1 era 0µ s( n( Tc 1s ho =2 t) 5° 1 C) 0.5 0 50 100 Case Temperature Ta = 25 °C 150 200 1 Tc (°C) Typical Output Characteristics 20 Pulse Test 4.5 V 4V 30 3.5 V 20 3V 10 2.5 V (A) 40 V DS = 10 V Pulse Test ID 5V Drain Current 10 V 6V 2 5 10 20 50 100 Drain to Source Voltage V DS (V) Typical Transfer Characteristics 50 I D (A) PW 5 Operation in 0.2 Drain Current µs 10 16 12 8 Tc = 75°C 25°C 4 –25°C VGS = 2 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 5 4 V GS (V) 2SK2334 L , 2SK2334 S Drain to Source On State Resistance R DS(on) ( Ω ) 0.6 Pulse Test 0.8 I D = 15 A 10 A 0.4 5A 0.2 Static Drain to Source on State Resistance R DS(on) ( Ω) 0 2 4 6 Gate to Source Voltage 8 0.06 2 A, 5 A V GS = 4 V 2 A, 5 A, 10 A 0.04 10 V 0.02 0 –40 0.2 0.1 VGS = 4 V 0.05 10 V 0.02 0.01 1 2 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.1 Pulse Test I D = 10 A 0.08 Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 10 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance |yfs| (S) V DS(on) (V) 1.0 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 5 10 20 50 Drain Current I D (A) 100 Forward Transfer Admittance vs. Drain Current 20 Tc = –25 °C 25 °C 10 75 °C 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 2SK2334 L , 2SK2334 S 1000 10000 Capacitance C (pF) 500 200 100 50 20 10 0.1 16 VGS VDS V DD = 10 V 25 V 50 V 40 12 8 I D = 20 A 20 0 V DD = 50 V 25 V 10 V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 V GS (V) 80 Coss 300 Crss 100 0 10 20 30 40 50 Drain to Source Voltage V DS (V) 1000 Gate to Source Voltage V DS (V) Drain to Source Voltage 20 Ciss 1000 10 Dynamic Input Characteristics 60 3000 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 100 VGS = 0 f = 1 MHz 30 di/dt = 50 A/µs V GS = 0, Ta = 25°C Switching Characteristics V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 500 Switching Time t (ns) Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage Body–Drain Diode Reverse Recovery Time 200 100 50 20 10 0.3 t d(off) tf tr t d(on) 1 3 Drain Current 10 I D (A) 30 2SK2334 L , 2SK2334 S Reverse Drain Current vs. Souece to Drain Voltage Repetive Avalanche Energy E AR (mJ) Reverse Drain Current I DR (A) 20 Maximun Avalanche Energy vs. Channel Temperature Derating Pulse Test 16 12 10 V 8 5V V GS = 0, –5 V 4 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 40 I AP = 20 A V DD = 25 V duty < 0.1 % Rg > 50 Ω 32 24 16 8 0 25 V SD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform V DS Monitor EAR = L 1 2 • L • I AP • 2 I AP Monitor VDSS VDSS – V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin –15 V 50Ω 0 VDD 2SK2334 L , 2SK2334 S Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 0.05 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 4.17 °C/W, Tc = 25 °C 0.02 e uls 1 0.0 0.03 PDM P ot D= h 1s PW T PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m 1 PW (S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 10 90% D.U.T. RL Vin Vin 10 V 50Ω V DD = 30 V Vout 10% 10% 90% td(on) tr 10% 90% td(off) tf