3SK196 Silicon N Channel Dual Gate MOS FET VHF/UHF TV Tuner RF Amplifier Features MPAK-4 • Compact package. • Low noise amplifier for VHF to UHF band, capable of RF amplifier for CATV wide band tuner. 2 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————– Drain to source voltage VDS 12 V ——————————————————————– Gate 1 to source voltage VG1S ±10 V ——————————————————————– Gate 2 to source voltage VG2S ±10 V ——————————————————————– Drain current ID 35 mA ——————————————————————– Channel power dissipation Pch 150 mW ——————————————————————– Channel temperature Tch 125 °C ——————————————————————– Storage temperature Tstg –55 to +125 °C ——————————————————————– 3 1 4 1. 2. 3. 4. Source Gate 1 Gate 2 Drain 3SK196 3SK196 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ———————————————————————————————————————————————– Drain to source breakdown voltage V(BR)DSX 12 — — V VG1S = VG2S = –5 V, ID = 200 µA ———————————————————————————————————————————————– Gate 1 to source breakdown voltage V(BR)G1SS ±10 — — V IG1 = ±10 µA, VG2S = VDS = 0 ———————————————————————————————————————————————– Gate 2 to source breakdown voltage V(BR)G2SS ±10 — — V IG2 = ±10 µA, VG1S = VDS = 0 ———————————————————————————————————————————————– Gate 1 cutoff current IG1SS — — ±100 nA VG1S = ±8 V, VG2S = VDS = 0 ———————————————————————————————————————————————– Gate 2 cutoff current IG2SS — — ±100 nA VG2S = ±8 V, VG1S = VDS = 0 ———————————————————————————————————————————————– Gate 1 to source cutoff voltage VG1S(off) –0.5 — +1.5 V VDS = 10 V, VG2S = 3 V, ID = 100 µA ———————————————————————————————————————————————– Gate 2 to source cutoff voltage VG2S(off) +0.5 — +1.5 V VDS = 10 V, VG1S = 3 V, ID = 100 µA ———————————————————————————————————————————————– Drain current IDSS 0 0.16 1 mA VDS = 6 V, VG2S = 3 V, VG1S = 0 ———————————————————————————————————————————————– Forward transfer admittance |yfs| 14 21 — mS VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 1 kHz ———————————————————————————————————————————————– Input capacitance Ciss — 2.4 3.5 pF VDS = 6 V, VG2S = 3 V, ———————————————————————————————————– ID = 10 mA, f = 1 MHz Output capacitance Coss — 1.1 2.5 pF ———————————————————————————————————– Reverse transfer capacitance Crss — 0.02 — pF ———————————————————————————————————————————————– Power gain PG 12 14 — dB VDS = 6 V, VG2S = 3 V, ———————————————————————————————————– ID = 10 mA, f = 900 MHz Noise figure NF — 3.6 4.5 dB ———————————————————————————————————————————————– Noise figure NF — 3.3 4 dB VDD = 12 V, VAGC = 10.5 V, f = 60 MHz ———————————————————————————————————————————————– Power gain PG 25 32 — dB VDS = 6 V, VG2S = 3 V, ———————————————————————————————————– ID = 10 mA, f = 200 MHz Noise figure NF — 1.0 2 dB ———————————————————————————————————————————————– • Marking is “XI-”.