ETC 544L3

GaAlAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
MIE-544L3
Package Dimensions
φ5.05
(.200)
The MIE-544L3 is an infrared emitting diode in GaAlAs
Unit : mm (inches )
on GaAlAs technology molded in water clear plastic package.
5.47
(.215)
7.62
(.300)
5.90
(.230)
1.00
(.040)
FLAT DENOTES CATHODE
23.40 MIN.
(.920)
Features
0.50 TYP.
(.020)
l
High radiant power and high radiant intesity
l
Suitable for DC and high pulse current operation
l
Standard T-1 3/4 (φ 5mm) package
l
Peak wavelength λP =880 nm
l
Good spectral matching to Si-Photodetecto
l
Radiant angle : 40°
1.00MIN
(.040)
2.54
(.100)
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
'@ TA=25oC
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Maximum Rating
Unit
120
mW
1
A
100
mA
5
V
o
o
o
o
Operating Temperature Range
-55 C to +100 C
Storage Temperature Range
-55 C to +100 C
Lead Soldering Temperature
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
11/17/2000
MIE-544L3
Optical-Electrical Characteristics
@ TA=25oC
Parameter
Test Conditions
Symbol
Min.
Typ .
Max.
Unit
Radiant Intensity
IF=20mA
Ie
1.8
Forward Voltage
IF=50mA
VF
1.4
Reverse Current
VR=5V
IR
Peak Wavelength
IF=20mA
λ
880
nm
Spectral Bandwidth
IF=20mA
∆λ
80
nm
View Angle
IF=20mA
2 θ1/2
40
deg .
mW/sr
1.7
V
100
µA
Typical Optical-Electrical Characteristic Curves
Forward Current I F (mA)
Relative Radiant Intensity
1
0.5
0
780
880
100
90
80
70
60
50
0
-55
980
80
60
40
20
0
0
1.2
1.6
2.0
2.4
2.8
Output Power To Value IF=20mA
Forward Current (mA)
100
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
0
25
50
75
3
2.5
2
1.5
1
0.5
0
-40
-20
0
20
4
3
2
1
0
0
20
40
60
80
100
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
40
60
o
0° 10°
5
100 125
Ambient Temperature TA ( C)
FIG.4 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
Relative Radiant Intensity
Output Power Relative To
Value at I F=20mA
-25
Ambient Temperature TA (oC)
FIG.2 FORWARD CURRENT VS.
AMBIENT TEMPERATURE
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
20°
30°
40°
50°
60°
70°
80°
90°
1.0
0.9
0.8
0.5 0.3 0.1 0.2 0.4 0.6
FIG.6 RADIATION DIAGRAM
Unity Opto Technology Co., Ltd.
11/17/2000