ETC 8419002YA

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Change case outline X to case outline Q. Add case outline Y. Delete group C
programmability test and add margin test. Convert to military drawing format.
86-09-23
M. A. Frye
B
Add vendor CAGE 34335. Add device type 02. Change drawing CAGE number.
Editorial changes throughout.
88-05-26
M. A. Frye
C
Changes made in accordance with NOR 5962-R038-93
92-12-09
Monica L. Poelking
D
Incorporated Revision C. Updated drawing to Q level. Updated boilerplate
to MIL-PRF-38535 requirements. – LTG
01-12-03
Thomas M. Hess
THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED
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PMIC N/A
PREPARED BY
Greg A. Pitz
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
http://www.dscc.dla.mil
CHECKED BY
Ray Monnin
APPROVED BY
Michael A. Frye
DRAWING APPROVAL DATE
MICROCIRCUIT, DIGITAL, N-CHANNEL, MOS
8-BIT MICROCOMPUTER WITH 32 K-BIT
UVEPROM, MONOLITHIC SILICON
85-06-24
AMSC N/A
REVISION LEVEL
D
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
1 OF
84190
21
5962-E086-02
1. SCOPE
1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in
accordance with MIL-PRF-38535, appendix A.
1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example:
84190
Drawing number
01
Q
X
Device type
(see 1.2.1)
Case outline
(see 1.2.2)
Lead finish
(see 1.2.3)
1.2.1 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
Circuit function
Frequency
01
8751H-8
8-bit microcomputer with
32 K-bit UVEPROM
8.0 MHz max
02
8751H
8-bit microcomputer with
32 K-bit UVEPROM
12.0 MHz max
1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
Q
Y
Descriptive designator
Terminals
GDIP1-T40 or CDIP2-T40
CQCC1-N44
Package style 1/
40
44
Dual-in-line package
Square chip carrier package
1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A.
1.3 Absolute maximum ratings.
Voltage on any pin (except VPP) 2/ .........................................
Voltage (VPP) ...........................................................................
Power dissipation (PD).............................................................
Storage temperature range .....................................................
Junction temperature (TJ)........................................................
Lead temperature (soldering, 5 seconds) ...............................
Thermal resistance, junction-to-case (θJC):
Cases Q and Y ......................................................................
-0.5 V dc to +7.0 V dc
21.5 V dc
2.0 W
-65°C to +150°C
+165°C
+260°C
See MIL-STD-1835
1.4 Recommended operating conditions.
Supply voltage (VCC)................................................................ 4.5 V dc to 5.5 V dc
Program voltage (VPP) ............................................................. 21.0 V dc ±0.5 V dc
Case operating temperature range (TC) .................................. -55°C to +125°C
1/ Lid shall be transparent to permit ultraviolet light erasure.
2/ All voltages referenced to VSS.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
2
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed
in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in
the solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for
non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified
Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional
certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program
plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality
Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or
function of the device. These modifications shall not affect the PIN as described herein. A "Q" or "QML" certification mark in
accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. This drawing has been modified to
allow the manufacturer to use the alternate die/fabrication requirements of paragraph A.3.2.2 of MIL-PRF-38535 or other
alternative approved by the qualifying activity.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as
specified in MIL-PRF-38535, appendix A and herein.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.2 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Block diagram. The block diagram shall be as specified on figure 2.
3.2.4 Programmed EPROM device. The requirements for supplying programmed EPROM devices are not part of this
drawing.
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
as specified in table I and shall apply over the full case operating temperature range.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
3
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are described in table I.
3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN
listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked as listed in MIL-HDBK-103 (see 6.6 herein). For
packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the
option of not marking the "5962-" on the device.
3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance
to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a "Q" or "QML" certification mark in
accordance with MIL-PRF-38535 to identify when the QML flow option is used. For product built in accordance with A.3.2.2 of
MIL-PRF-38535, or as modified in the manufacturer’s QM plan, the “QD” certification mark shall be used in place of the "Q" or
"QML" certification mark.
3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an
approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DSCC-VA prior to
listing as an approved source of supply shall affirm that the manufacturer's product meets the requirements of
MIL-PRF-38535, appendix A and the requirements herein.
3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided
with each lot of microcircuits delivered to this drawing.
3.8 Notification of change. Notification of change to DSCC-VA shall be required in accordance with MIL-PRF-38535,
appendix A.
3.9 Verification and review. DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's
facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the
reviewer.
3.10 Processing EPROMS. All testing requirements and quality assurance provisions herein shall be satisfied by the
manufacturer prior to delivery.
3.10.1 Erasure of EPROMS. When specified, devices shall be erased in accordance with the procedures and
characteristics specified in 4.4.
3.10.2 Programmability of EPROMS. When specified, devices shall be programmed to the specified pattern using the
procedures and characteristics specified in 4.5 and table III.
3.10.3 Verification of erasure of programmability of EPROMS. When specified, devices shall be verified as either
programmed to the specified pattern or erased. As a minimum, verification shall consist of performing a functional test
(subgroup 7) to verify that al bits are in the proper state. Any bit that does not verify to be the proper state shall constitute
a device failure, and shall be removed from the lot.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
4
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions
-55°C ≤ TC ≤ +125°C
VCC = 5.0 V ±10%
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Unit
Max
Input low voltage
Input high voltage (except
XTAL2, RST)
VIL
1, 2, 3
All
0.7
VIH
1, 2, 3
All
2.2
V
Input high voltage to
XTAL2, RST
Output low voltage ports 1,
2, 3
Output low voltage port 0
ALE, PSEN
VIH1
XTAL1 = VSS
1, 2, 3
All
2.5
V
VOL
IOL = 1.2 mA
1, 2, 3
All
VOL1
IOL = 2.8 mA
1, 2, 3
All
Output high voltage ports
1, 2, 3
Output high voltage port 0
(in external bus mode),
ALE, PSEN
Logical 0 input current
P1, P2, P3
Logical 0 input current to
EA/VPP
Logical 0 input current to
XTAL2
Input leakage current to
port 0
Logical input current to
EA/VPP
Input current to RST/VPD to
activate reset
VOH
IOH = -60 µA
1, 2, 3l
All
2.4
V
VOH1
IOH = -300 µA
1, 2, 3
All
2.4
V
IIL
VIN = 0.45 V
1, 2, 3
All
-500
µA
IIL1
VIN = 0.45 V
1, 2, 3
All
-15
mA
IIL2
XTAL1 = VSS, VIN = 0.45 V
1, 2, 3
All
-4.5
mA
ILI
0.45 V < VIN < VCC
1, 2, 3
All
±125
µA
IIH
VIN = 2.4 V
1, 2, 3
All
500
µA
IIH1
VIN < (VCC –1.5 V)
1, 2, 3
All
500
µA
Power supply current
ICC
1, 2, 3
All
275
mA
Capacitance of I/O buffers
CI/O
All outputs disconnected,
EA = VCC
fc = 1 MHz, TC = +25°C
See 4.3.1c
4
All
30
pF
IOL = 2.4 mA
V
0.45
V
0.60
V
0.45
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
5
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Oscillator period
High time 1/ 3/
tCLCL
tCHCX
Low time 1/ 3/
tCLCX
Rise time 1/ 3/
tCLCH
Fall time 1/ 3/
tCHCL
ALE pulse width
tLHLL
Address valid to
ALE
Address hold
after ALE
ALE to valid instr
in
ALE to PSEN
Conditions
-55°C ≤ TC ≤ +125°C
VCC = 5.0 V ±10%
unless otherwise specified
tAVLL
tLLAX
tLLIV
tLLPL
PSEN to valid
instr in
Input instr hold
after PSEN
Input instr float
after PSEN 1/
PSEN to address
valid
tPLIV
Device
type
Limits
Max
Min
Max
01
125
286
tCLCL
tCLCL
02
83
286
tCLCL
tCLCL
9, 10, 11
All
20
9, 10, 11
All
20
9, 10, 11
All
All
9, 10, 11
01
195
02
112
01
70
02
28
01
75
02
33
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
20
335
02
168
01
85
02
43
01
300
02
175
210
02
85
All
tPXIZ
9, 10, 11
01
90
02
48
0
100
02
58
20
ns
ns
ns
ns
4tCLCL
-165
4tCLCL
-165
tCLCL
-40
tCLCL
-40
3tCLCL
-75
3tCLCL
-75
01
01
ns
2tCLCL
-55
2tCLCL
-55
tCLCL
-55
tCLCL
-55
tCLCL
-50
tCLCL
-50
9, 10, 11
9, 10, 11
ns
20
20
01
ns
3tCLCL
-165
3tCLCL
-165
0
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
tCLCL
-35
tCLCL
-35
DSCC FORM 2234
APR 97
84190
D
ns
ns
SIZE
REVISION LEVEL
ns
ns
tCLCL
-25
tCLCL
-25
A
ns
ns
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
ns
ns
20
9, 10, 11
9, 10, 11
20
tPXIX
tPXAV
Unit
Limits 2/
Min
9, 10, 11
CL (Port 0, ALE, PSEN) =
100 pF
CL (all others) = 80 pF
fMAX = 8 MHz device 01
fMAX = 12 MHz device 02
See figures 3 and 4 4/
tPLPH
PSEN pulse
width
Group A
subgroups
SHEET
6
TABLE I. Electrical performance characteristics - Continued
Test
Symbol
Conditions
-55°C ≤ TC ≤ +125°C
VCC = 5.0 V ±10%
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Address to valid
instr in
Address float to
PSEN 1/
RD pulse width
WR pulse width
Address hold
after ALE
tAVIV
tAZPL
tRLRH
9, 10, 11
CL (Port 0, ALE, PSEN) =
100 pF
CL (all others) = 80 pF
fMAX = 8 MHz device 01
fMAX = 12 MHz device 02
See figures 3 and 4 4/
tWLWH
tLLAX
RD to valid data
in
Data hold after
RD
Data float after
RD 1/
ALE to valid data
in
Address to valid
data in
tRLDV
Address to WR
or RD
Data valid to WR
transition
01
460
02
252
0
ns
9, 10, 11
01
650
ns
02
400
01
650
02
400
01
75
02
33
6tCLCL
-100
6tCLCL
-100
6tCLCL
-100
6tCLCL
-100
tCLCL
-50
tCLCL
-50
9, 10, 11
9, 10, 11
9, 10, 11
01
440
02
232
tRHDZ
9, 10, 11
01
165
02
82
01
830
02
496
01
940
02
565
tAVWL
tQVWX
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
0
ns
ns
5tCLCL
-185
5tCLCL
-185
0
01
310
440
02
185
315
01
355
02
188
01
40
02
0
3tCLCL
-65
3tCLCL
-65
4tCLCL
-145
4tCLCL
-145
tCLCL
-85
tCLCL
-85
2tCLCL
-85
2tCLCL
-85
8tCLCL
-170
8tCLCL
-170
9tCLCL
-185
9tCLCL
-185
3tCLCL
+65
3tCLCL
+65
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
D
ns
ns
ns
ns
84190
REVISION LEVEL
ns
ns
SIZE
A
ns
ns
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
ns
0
All
tAVDV
Max
5tCLCL
-165
5tCLCL
-165
All
9, 10, 11
tLLDV
Min
9, 10, 11
tRHDX
tLLWL
ALE to WR or
RD
Max
Unit
Limits 2/
SHEET
7
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions
-55°C ≤ TC ≤ +125°C
VCC = 5.0 V ±10%
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Data setup to
WR high
tQVWH
Data held after
WR
RD low to
address float 1/
RD or WR high
to ALE high
tWHQX
tRLAZ
9, 10, 11
CL (Port 0, ALE, PSEN) =
100 pF
CL (all others) = 80 pF
fMAX = 8 MHz device 01
fMAX = 12 MHz device 02
See figures 3 and 4 4/
tWHLH
Max
01
800
02
508
01
60
02
18
9, 10, 11
All
0
9, 10, 11
01
60
190
02
18
148
9, 10, 11
Unit
Limits 2/
Min
7tCLCL
-75
7tCLCL
-75
tCLCL
-65
tCLCL
-65
Max
ns
ns
0
tCLCL
-65
tCLCL
-65
ns
tCLCL
+65
tCLCL
+65
ns
1/ Tested only initially and after any design changes.
2/ Variable oscillator equations provided for design purposes.
3/ Required external clock drive characteristics (XTAL2).
4/ AC testing: Inputs are driven at 2.4 V for a logic “1” and 0.45 V for a logic “0”. Timing measurements are made at 2.0 V
for a logic “1” and 0.8 V for a logic “0”.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
8
Device types
Case outline
Terminal numbers
1
Terminal symbols
P1.0
All
Q
Terminal numbers
21
Terminal symbols
P2.0
2
P1.1
22
P2.1
3
P1.2
23
P2.2
4
P1.3
24
P2.3
5
P1.4
25
P2.4
6
P1.5
26
P2.5
7
P1.6
27
P2.6
8
P1.7
28
P2.7
9
RST
29
PSEN
10
P3.0/RXD
30
ALE/PROG
11
P3.1/TXD
31
EA/VPP
12
P3.2/INT0
32
P0.7
13
P3.3/INT1
33
P0.6
14
P3.4/T0
34
P0.5
15
P3.5/T1
35
P0.4
16
P3.6/WR
36
P0.3
17
P3.7/RD
37
P0.2
18
XTAL2
38
P0.1
19
XTAL1
39
P0.0
20
VSS
40
VCC
FIGURE 1. Terminal connections.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
9
Device types
Case outline
Terminal numbers
1
Terminal symbols
NC
All
Y
Terminal numbers
23
Terminal symbols
NC
2
P1.0
24
P2.0
3
P1.1
25
P2.1
4
P1.2
26
P2.2
5
P1.3
27
P2.3
6
P1.4
28
P2.4
7
P1.5
29
P2.5
8
P1.6
30
P2.6
9
P1.7
31
P2.7
10
RST
32
PSEN
11
P3.0/RXD
33
ALE/PROG
12
NC
34
NC
13
P3.1/TXD
35
EA/VPP
14
P3.2/INT0
36
P0.7
15
P3.3/INT1
37
P0.6
16
P3.4/T0
38
P0.5
17
P3.5/T1
39
P0.4
18
P3.6/WR
40
P0.3
19
P3.7/RD
41
P0.2
20
XTAL2
42
P0.1
21
XTAL1
43
P0.0
22
VSS
44
VCC
NC = No connection
FIGURE 1. Terminal connections – Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
10
FIGURE 2. Block diagram.
STANDARD
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COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
11
FIGURE 3. AC timing circuits.
STANDARD
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DSCC FORM 2234
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SIZE
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A
REVISION LEVEL
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12
FIGURE 4. Clock waveforms.
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REVISION LEVEL
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PROGRAMMING
FIGURE 5. Programming logic.
STANDARD
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A
REVISION LEVEL
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PROGRAM VERIFICATION
FIGURE 5. Programming logic – Continued.
STANDARD
MICROCIRCUIT DRAWING
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DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
15
SECURITY BIT PROGRAMMING
FIGURE 5. Programming logic – Continued.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
16
FIGURE 6. Programming waveforms.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
17
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535,
appendix A.
4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices
prior to quality conformance inspection. The following additional criteria shall apply:
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition D. The test circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method
1015 of MIL-STD-883.
(2) TA = +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter
tests prior to burn-in are optional at the discretion of the manufacturer.
c.
A data retention stress test shall be included as part of the screening procedure and shall consist of the following
steps.
(1) Program greater than 95 percent of the bit locations, including the slowest programming cell (see 3.10.2).
The remaining cells shall provide a worst case speed pattern.
(2) Bake, unbiased, for 72 hours at +140°C to screen for data retention lifetime.
(3) Perform a margin test using Vm = +5.9 V at +25°C using loose timing (i.e., TACC = 1 µs).
(4) Perform dynamic burn-in (see 4.2a).
(5) Margin at Vm = 5.9 V.
(6) Perform electrical tests (see 4.2).
(7) Erase (see 3.10.1), except devices submitted for groups A, B, C, and D testing.
(8) Verify erasure (see 3.10.3).
4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 5005 of MIL-STD883 including groups A, B, C, and D inspections. The following additional criteria shall apply.
4.3.1 Group A inspection.
a.
Tests shall be as specified in table II herein.
b.
Subgroups 5 and 6 in table I, method 5005 of MIL-STD-883 shall be omitted.
c.
Subgroup 4 shall be measured only for the initial test and after process or design changes which may affect input
capacitance. A minimum sample size of 5 devices with zero failures shall be required.
d.
All devices selected for testing shall have the EPROM programmed with a checkerboard pattern or equivalent.
After completion of all testing, the devices shall be erased and verified (except devices submitted for groups C
and D testing).
e.
Subgroups 7 and 8 shall consist of verifying the EPROM pattern specified and the instruction set. The instruction
set forms a part of the vendors test tape and shall be maintained and available from the approved source of supply.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
18
TABLE II. Electrical test requirements.
MIL-STD-883 test requirements
Interim electrical parameters
(method 5004)
Final electrical test parameters
(method 5004)
Group A test requirements
(method 5005)
Groups C and D end-point
electrical parameters
(method 5005)
Subgroups
(in accordance with
MIL-STD-883, method 5005,
table I) 1/ 2/ 3/ 4/
--1*, 2, 3, 7, 9
1, 2, 3, 7, 8, 9, 10, 11
2, 8A, 10 or 1, 2, 3
1/ * PDA applies to subgroup 1.
2/ Any or all subgroups may be combined when using a high speed tester.
3/ Subgroups 7 and 8 shall consist of verifying the EPROM pattern specified and the
instruction set.
4/ For all electrical tests, the device shall be programmed to the pattern specified (see 4.3.1d).
4.3.2 Groups C and D inspections.
a.
End-point electrical parameters shall be as specified in table II herein.
b.
Steady-state life test conditions, method 1005 of MIL-STD-883.
(1)
Test condition D. The test circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1005 of MIL-STD-883.
(2)
TA = +125°C, minimum.
(3)
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
(4)
All devices selected for testing shall be programmed with a checkerboard pattern or equivalent. After
completion of all testing, the devices shall be erased and verified.
4.4 Erasing procedure. The device is erased by exposure to high intensity short wave ultraviolet light at a wavelength
2
of 253.7 mm. The recommended integrated dose (i.e., UV intensity X exposure time) is 15 W-s/cm . An example of an
ultraviolet source which can erase the device in 30 minutes is the Model S52 short wave ultraviolet lamp. The lamp should be
used without short wave filters and the EPROM should be placed about 1 inch from the lamp tubes. After erasures, all bits are
in the high state.
4.5 Programming procedures for method A. The programming characteristics in table III and the following procedures
shall be used for programming the device.
a. Connect the device in the electrical configuration (see figure 5) for programming the waveforms of figure 6 and
programming characteristics of table III shall apply.
b. Initially and after each erasure, all bits are in the high “H” state. Information is introduced by selectively programming
“L” into the desired bit locations. A programmed “L” can be changed to an “H” by ultraviolet light erasure (see 4.4).
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
19
TABLE III. Programming characteristics.
Parameter
Programming supply voltage
Programming current
Oscillator frequency
Symbol
VPP
IPP
1/tCLCL
tAVGL
Conditions
VCC = 5.0 V ±10%
TC = +25°C
Min
20.5
Max
21.5
30.0
6.0
4.0
48tCLCL
Units
V
mA
MHz
ns
Address setup to PROG
tGHAX
48tCLCL
ns
tDVGL
48tCLCL
ns
tGHDX
48tCLCL
ns
tEHSH
48tCLCL
ns
tSHGL
10.0
µs
tGHSL
10.0
µs
tGLGH
45.0
Address hold after PROG
Data setup to PROG
Data hold after PROG
ENABLE high to VPP
VPP setup to PROG
VPP hold after PROG
PROG width
Address to data valid
tAVQV
tELQV
55.0
ms
48tCLCL
48tCLCL
ns
ns
48tCLCL
ns
ENABLE to data valid
0
tEHQZ
Data float after ENABLE
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535, appendix A.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.2 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing.
6.3 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.4 Record of users. Military and industrial users shall inform Defense Supply Center Columbus when a system application
requires configuration control and the applicable SMD. DSCC will maintain a record of users and this list will be used for
coordination and distribution of changes to the drawings. Users of drawings covering microelectronics devices (FSC 5962)
should contact DSCC-VA, telephone (614) 692-0544.
6.5 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43216-5000, or telephone
(614) 692-0547.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
20
6.6 Symbols, definitions, and functional descriptions. The symbol, definitions, and functional description for this device
shall be as follows:
Port 0
Port 0 is an 8-bit open drain bidirectional I/O port. It is also the multiplexed low-order address and data
bus during accesses to external memory. It also receives the instruction bytes during EPROM
programming, and outputs instruction bytes during program verification. (External pull-ups are required
during program verification). Port 0 can sink (and in bus operations can source) eight LS TTL inputs.
Port 1
Port 1 is an 8-bit bidirectional I/O port with internal pullups. It receives the low-order address byte during
EPROM programming and program verification. Port 1 can sink/source four LS TTL inputs.
Port 2
Port 2 is an 8-bit bidirectional I/O port with internal pullups. It emits the high-order address byte during
accesses to external memory. It also receives the high-order address bits during EPROM programming
and program verification. Port 2 can sink/source four LS TTL inputs.
Port 3
Port 3 is an 8-bit bidirectional I/O port with internal pullups. It also serves the functions of various special
features as listed below:
Port pin
P3.0
P3.1
P3.2
P3.3
P3.4
P3.5
P3.6
P3.7
Alternate function
RXD (serial input port)
TXD (serial output port)
INT0 (external interrupt)
INT1 (external interrupt)
T0 (timer/counter 0 external input)
T1 (timer/counter 1 external input)
WR (external data memory write strobe)
RD (external data memory read strobe)
Port 3 can sink/source four LS TTL inputs
RST
A high on this pin for two machine cycles while the oscillator is running resets the device. A small external
pulldown resistor (8.2 kΩ) from RST to VSS permits power-on reset when a capacitor (10 µF) is also
connected from this pin to VCC.
ALE/PROG Address latch enable output for latching the low byte of the address during accesses to external memory.
ALE is activated at a constant rate of 1/6 the oscillator frequency except during external data memory
access at which time one ALE pulse is skipped. ALE can sink/source 8 LS TTL inputs. This pin is also
the program pulse input (PROG) during EPROM programming.
PSEN
Program store enable output is the read strobe to external program memory. PSEN is activated twice
each machine cycle during fetches from external program memory. (However, even when executing out
of external program memory two activations of PSEN are skipped during each access to external data
memory). PSEN is not activated during fetches from internal program memory. PSEN can sink/source
8 LS TTL inputs.
EA/VPP
When EA is held high, the device executes out of internal program memory (unless the program counter
exceeds 0FFFH). When EA is held low, the device executes only out of external program memory. This
pin also receives the 21 V programming supply voltage (VPP) during EPROM programming. This pin
should not be floated during normal operation.
XTAL1
Input to the inverting amplifier that forms the oscillator, XTAL1 should be grounded when an external
oscillator is used.
XTAL2
Output of the inverting amplifier that forms the oscillator, and input to the internal clock generator. Receives
the external oscillator signal when an external oscillator is used.
6.7 Approved sources of supply. Approved sources of supply are listed in MIL-HDBK-103. The vendors listed in
MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and
accepted by DSCC-VA.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
84190
A
REVISION LEVEL
D
SHEET
21
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 01-12-03
Approved sources of supply for SMD 84190 are listed below for immediate acquisition information only and shall be
added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to
include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of
compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated
revision of MIL-HDBK-103 and QML-38535.
Standard
microcircuit drawing
PIN 1/
8419001QA
8419001YX
8419002QX
Vendor
CAGE
number
3V146
3/
3/
Vendor
similar
PIN 2/
MD8751H-8/BQA
MR8751H-8B
8751H/BQA
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ No approved source of supply.
Vendor CAGE
number
3V146
Vendor name
and address
Rochester Electronics Inc.
10 Malcolm Hoyt Drive
Newburyport, MA 01950
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.