PHEMT GaAs IC High Power SP4T Switch 0.1–2.5 GHz AS192-000 Outline Drawing ■ Handles GSM Power Levels ■ Available in 100% RF Tested Chip Form V4 0.0209 (0.53 mm) ANT 0.0156 (0.40 mm) V1 0.0030 (0.08 mm) 0.0000 (0.00 mm) J1 Description The AS192-000 is a reflective SP4T switch. It is an ideal switch for higher power applications. It can be used for GSM dual-band handset applications where both low loss, low current and small size are critical parameters. V3 V2 J2 0.0382 (0.97 mm) ■ Excellent Harmonic Performance 0.0261 (0.66 mm) J3 0.0351 (0.89 mm) ■ High IP3 J4 0.0337 (0.86 mm) ■ Positive Voltage Control 0.0417 (1.06 mm) 0.0387 (0.98 mm) 0.0045 (0.11 mm) ■ 4 Symmetric RF Paths 0.0000 (0.00 mm) 0.0031 (0.08 mm) Features Chip thickness 0.008 ± 0.001 (0.203 ± 0.025). Electrical Specifications at 25°C (0, +4.5 V) Parameter Frequency Insertion Loss Ant-J1, J2, J3, J4 0.1–0.5 0.5–1.0 1.0–2.0 2.0–2.5 GHz GHz GHz GHz Isolation Ant-J1, J2, J3, J4 0.1–0.5 0.5–1.0 1.0–2.0 2.0–2.5 GHz GHz GHz GHz VSWR Min. 30 25 19 18 0.1–1.0 GHz 1.0–2.5 GHz Typ. Max. Unit 0.90 0.95 1.00 1.10 1.1 1.1 1.2 1.3 dB dB dB dB 34 29 23 21 dB dB dB dB 1.3:1 1.4:1 Operating Characteristics at 25°C (0, +4.5 V) Parameter Condition Frequency Switching Characteristics Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru IP3 2nd and 3rd Harmonics Control Voltages VLow = 0 VHigh = +4.5 V @ 200 µA Max. for RF power > 30 dBm VHigh = +3.0 V @ 200 µA Max. for RF power 20–30 dBm VHigh = +2.7 V @ 200 µA Max. for RF power < 20 dBm Min. Typ. Max. Unit 50 100 50 ns ns mV 13 dBm/Tone +55 dBm 34 dBm Input 900 MHz +65 dBc Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email [email protected] • www.skyworksinc.com Specifications subject to change without notice. 10/02A 1 PHEMT GaAs IC High Power SP4T Switch 0.1–2.5 GHz AS192-000 Typical Performance Data 0 0 -5 -0.4 -10 Isolation (dB) -0.2 Loss (dB) -0.6 -0.8 -1.0 -1.2 -15 -20 -25 -30 -1.4 -35 -1.6 -40 -1.8 -45 -50 -2.0 0 0.5 1.0 1.5 2.0 2.5 0.5 1.0 1.5 2.0 Typical Insertion Loss vs. Frequency Typical Isolation vs. Frequency Absolute Maximum Ratings Characteristic 2.0 1.5 1.0 Value RF Input Power 4 W > 0.5 GHz 0/+6 V Control Control Voltage +6 V Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 0.5 Pin Out 0 0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) V1 ANT V4 J1 J4 J2 J3 Typical VSWR Truth Table V1 V2 Ant-J2 Ant-J3 Ant-J4 VHigh VLow VLow VLow Ins. Loss Isolation Isolation Isolation VLow VHigh VLow VLow Isolation Ins. Loss Isolation Isolation VLow VLow VHigh VLow Isolation Isolation Ins. Loss Isolation V3 V4 Ant-J1 Isolation Ins. Loss VLow VLow VLow VHigh Isolation VLow = 0. VHigh = 4.5 to 5.0 V for RF power > 30 dBm. VHigh = 3.0 to 5.0 V for RF power 20–30 dBm. VHigh = 2.7 to 5.0 V for RF power < 20 dBm. 2 2.5 Frequency (GHz) 2.5 VSWR 0 Frequency (GHz) Isolation V2 V3 Notes: DC blocking caps required on RF lines for positive voltage operation bond pad metalization: gold backside metalization: none bond pad dimensions: 0.003 (0.075 mm) x 0.003 (0.075 mm) See application note, Handling GaAs MMIC Die. Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email [email protected] • www.skyworksinc.com Specifications subject to change without notice. 10/02A