BC182,A,B BC183 BC184 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC182 BC183 BC184 Unit Collector–Emitter Voltage VCEO 50 30 30 Vdc Collector–Base Voltage VCBO 60 45 45 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 8.0 Watts mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 357 °C/W Thermal Resistance, Junction to Case RJC 125 °C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 50 30 30 — — — — — — 60 45 45 — — — — — — 6.0 — — — — — 0.2 0.2 0.2 15 15 15 — — 15 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CEO BC182 BC183 BC184 V(BR)CBO BC182 BC183 BC184 Emitter–Base Breakdown Voltage (IE = 100 A, IC = 0) Collector Cutoff Current (VCB = 50 V, VBE = 0) (VCB = 30 V, VBE = 0) V(BR)EBO February, 2001 – Rev. 1 V ICBO BC182 BC183 BC184 Emitter–Base Leakage Current (VEB = 4.0 V, IC = 0) Semiconductor Components Industries, LLC, 2001 V IEBO 1 V nA nA Publication Order Number: BC182/D BC182,A,B BC183 BC184 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max BC182 BC183 BC184 40 40 100 — — — — — — (IC = 2.0 mA, VCE = 5.0 V) BC182 BC183 BC184 120 120 250 — — — 500 800 800 (IC = 100 mA, VCE = 5.0 V) BC182 BC183 BC184 80 80 130 — — — — — — — — 0.07 0.2 0.25 0.6 — — 1.2 — 0.55 — 0.5 0.62 0.83 — 0.7 — BC182 BC183 BC184 — — — 100 120 140 — — — BC182 BC183 BC184 150 150 150 200 240 280 — — — Unit ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) hFE Collector–Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA)(1) VCE(sat) Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)(1) VBE(sat) Base–Emitter On Voltage (IC = 100 µA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V)(1) VBE(on) — V V V DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT MHz Common Base Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Cob — — 5.0 pF Common Base Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cib — 8.0 — pF 125 125 240 125 240 — — — — — 500 900 900 260 500 Small–Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz) (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz) hfe BC182 BC183 BC184 BC182A BC182B — NF BC184 BC182 BC183 BC184 dB — — — — 1. Pulse Test: Tp 300 s, Duty Cycle 2.0%. http://onsemi.com 2 2.0 2.0 2.0 2.0 4.0 10 10 4.0 BC182,A,B BC183 BC184 1.0 VCE = 10 V TA = 25°C 1.5 0.9 0.8 1.0 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 0.7 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 Figure 2. “Saturation” and “On” Voltages 10 400 300 7.0 C, CAPACITANCE (pF) 200 VCE = 10 V TA = 25°C 100 80 60 40 TA = 25°C Cib 5.0 3.0 Cob 2.0 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 1.0 0.4 50 0.6 0.8 1.0 Figure 3. Current–Gain — Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TA = 25°C 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitances 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25°C 140 130 120 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) 5.0 Figure 5. Base Spreading Resistance http://onsemi.com 3 10 20 40 BC182,A,B BC183 BC184 PACKAGE DIMENSIONS CASE 029–04 (TO–226AA) ISSUE AD A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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