ETC BC182/D

BC182,A,B
BC183
BC184
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BC182
BC183
BC184
Unit
Collector–Emitter Voltage
VCEO
50
30
30
Vdc
Collector–Base Voltage
VCBO
60
45
45
Vdc
Emitter–Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
TJ, Tstg
–55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
357
°C/W
Thermal Resistance, Junction to Case
RJC
125
°C/W
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR
1
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
50
30
30
—
—
—
—
—
—
60
45
45
—
—
—
—
—
—
6.0
—
—
—
—
—
0.2
0.2
0.2
15
15
15
—
—
15
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 A, IE = 0)
V(BR)CEO
BC182
BC183
BC184
V(BR)CBO
BC182
BC183
BC184
Emitter–Base Breakdown Voltage
(IE = 100 A, IC = 0)
Collector Cutoff Current
(VCB = 50 V, VBE = 0)
(VCB = 30 V, VBE = 0)
V(BR)EBO
February, 2001 – Rev. 1
V
ICBO
BC182
BC183
BC184
Emitter–Base Leakage Current
(VEB = 4.0 V, IC = 0)
 Semiconductor Components Industries, LLC, 2001
V
IEBO
1
V
nA
nA
Publication Order Number:
BC182/D
BC182,A,B BC183 BC184
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
BC182
BC183
BC184
40
40
100
—
—
—
—
—
—
(IC = 2.0 mA, VCE = 5.0 V)
BC182
BC183
BC184
120
120
250
—
—
—
500
800
800
(IC = 100 mA, VCE = 5.0 V)
BC182
BC183
BC184
80
80
130
—
—
—
—
—
—
—
—
0.07
0.2
0.25
0.6
—
—
1.2
—
0.55
—
0.5
0.62
0.83
—
0.7
—
BC182
BC183
BC184
—
—
—
100
120
140
—
—
—
BC182
BC183
BC184
150
150
150
200
240
280
—
—
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
hFE
Collector–Emitter On Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)(1)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)(1)
VBE(sat)
Base–Emitter On Voltage
(IC = 100 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)(1)
VBE(on)
—
V
V
V
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
MHz
Common Base Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cob
—
—
5.0
pF
Common Base Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cib
—
8.0
—
pF
125
125
240
125
240
—
—
—
—
—
500
900
900
260
500
Small–Signal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,
f = 1.0 kHz)
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,
f = 1.0 kHz, f = 200 Hz)
hfe
BC182
BC183
BC184
BC182A
BC182B
—
NF
BC184
BC182
BC183
BC184
dB
—
—
—
—
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
http://onsemi.com
2
2.0
2.0
2.0
2.0
4.0
10
10
4.0
BC182,A,B BC183 BC184
1.0
VCE = 10 V
TA = 25°C
1.5
0.9
0.8
1.0
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
2.0
0.8
0.6
0.4
0.7
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat) @ IC/IB = 10
0.1
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT (mAdc)
100
0
0.1
200
Figure 1. Normalized DC Current Gain
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mAdc)
50 70 100
Figure 2. “Saturation” and “On” Voltages
10
400
300
7.0
C, CAPACITANCE (pF)
200
VCE = 10 V
TA = 25°C
100
80
60
40
TA = 25°C
Cib
5.0
3.0
Cob
2.0
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
1.0
0.4
50
0.6 0.8 1.0
Figure 3. Current–Gain — Bandwidth Product
r b, BASE SPREADING RESISTANCE (OHMS)
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
TA = 25°C
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
170
160
150
VCE = 10 V
f = 1.0 kHz
TA = 25°C
140
130
120
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mAdc)
5.0
Figure 5. Base Spreading Resistance
http://onsemi.com
3
10
20
40
BC182,A,B BC183 BC184
PACKAGE DIMENSIONS
CASE 029–04
(TO–226AA)
ISSUE AD
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
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4
BC182/D