BC817 BC818 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 june 1996 PARTMARKING DETAILS BC817 6DZ BC817-16 6AZ BC817-25 6BZ BC817-40 6CZ ✪ BC818 6HZ BC818-16 6EZ BC818-25 6FZ BC818-40 6GZ E C B COMPLEMENTARY TYPES BC817 BC807 BC818 BC808 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BC817 BC818 UNIT V Collector-Base Voltage VCBO 50 30 Collector-Emitter Voltage VCEO 45 25 Emitter-Base Voltage VEBO V 5 V Peak Pulse Current ICM 1 A Continuous Collector Current IC 500 mA Base Current IB 100 mA Peak Base Current IBM 200 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Collector Cut-Off Current ICBO MIN. TYP. MAX. UNIT CONDITIONS. 0.1 5 µA µA VCB=20V, IE=0 VCB=20V, IE=0, Tamb=150°C Emitter Cut-Off Current IEBO 10 µA VEB=5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 700 mV IC=500mA, IB=50mA* Base-Emitter Turn-on Voltage VBE(on) 1.2 V IC=500mA, VCE=1V* Static Forward Current Transfer Ratio hFE 100 40 600 IC=100mA, VCE=1V* IC=500mA, VCE=1V* -16 100 250 IC=100mA, VCE=1V* -25 160 400 IC=100mA, VCE=1V* -40 250 600 IC=100mA, VCE=1V* Transition Frequency fT 200 MHz IC=10mA, VCE=5V f=35MHz Collector-base Capacitance Cobo 5.0 pF IE=Ie=0, VCB=10V f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 10