BCR523U NPN Silicon Digital Transistor Array 5 Switching circuit, inverter, interface circuit, 4 6 driver circuit Two ( galvanic) internal isolated Transistors with good matching in one package 3 2 Built in bias resistor (R1=1k, R2 =10k) 1 C1 B2 E2 6 5 4 VPW09197 R2 R1 TR2 TR1 R1 R2 1 2 3 E1 B1 C2 EHA07174 Type Marking BCR523U XGs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Input on Voltage Vi(on) 12 DC collector current IC 500 mA Total power dissipation, TS = 115 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 105 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Dec-19-2002 BCR523U Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - ICBO - - 100 nA IEBO - - 0.72 mA hFE 70 - - - - - 0.3 V Vi(off) 0.3 - 1 Vi(on) 0.4 - 1.4 Input resistor R1 0.7 1 1.3 k Resistor ratio R1 /R2 0.09 0.1 0.11 - fT - 100 - MHz Ccb - 3 - pF DC Characteristics Collector-emitter breakdown voltage V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 50 mA, VCE = 5 V VCEsat Collector-emitter saturation voltage1) IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 10 mA, VCE = 0.3 V AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% 2 Dec-19-2002 BCR523U DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (I C), hFE = 20 10 3 10 3 10 2 10 2 IC hFE mA 10 1 10 0 -1 10 10 1 10 0 10 1 10 2 A 10 10 0 0 3 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V IC 1 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 3 10 1 A mA 10 2 10 1 IC IC 10 0 10 0 10 -1 10 -1 10 -2 -1 10 10 0 V 10 10 -2 0 1 Vi(on) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1 Vi(off) 3 Dec-19-2002 BCR523U Total power dissipation Ptot = f (TS ) 400 mW P tot 300 250 200 150 100 50 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 10 3 2 RthJS 10 Ptotmax / PtotDC K/W D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 tp 4 Dec-19-2002 0