Technische Information / Technical Information IGBT-Module IGBT-Module BSM 150 GXR 120 DN2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 1200 V T C = 80 °C IC,nom. 150 A T C = 25 °C IC 200 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, T C = 80°C ICRM 300 A Gesamt-Verlustleistung total power dissipation T C=25°C, Transistor Ptot 1050 W VGES +/- 20V V IF 150 A IFRM 300 A I2t 12 kA2s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, T Vj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. typ. - 2,5 3 V - 3,1 3,7 V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 150A, VGE = 15V, Tvj = 25°C VCE sat IC = 150A, VGE = 15V, Tvj = 125°C max. Gate-Schwellenspannung gate threshold voltage IC = 6mA, VCE = VGE, T vj = 25°C Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 10 - nF VCE = 1200V, VGE = 0V, Tvj = 25°C ICES - 0,01 1 mA - 8 - - Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 125°C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C prepared by: Mark Münzer date of publication: 2003-12-09 approved by: Robert Severin revision: 3.1 1(8) IGES mA 320 nA Datenblatt_BSM150GXR120DN2.xls Technische Information / Technical Information IGBT-Module IGBT-Module BSM 150 GXR 120 DN2 Charakteristische Werte / Characteristic values min. typ. max. - 0,07 - µs - 0,07 - µs - 0,05 - µs - 0,05 - µs - 0,45 - µs - 0,49 - µs - 0,034 - µs - 0,034 - µs Eon - 24,4 - mWs Eoff - 12,7 - mWs ISC - 1200 - A LsCE - 35 - nH min. typ. max. - 2,3 2,8 V - 1,8 - V - 160 - A - 210 - A - 13 - µAs - 30 - µAs - 3,1 - mWs - 7,7 - mWs Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 150A, VCE = 600V VGE = ±15V, RG = 5,6Ω, T vj = 25°C td,on VGE = ±15V, RG = 5,6Ω, T vj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 150A, VCE = 600V VGE = ±15V, RG = 5,6Ω, T vj = 25°C tr VGE = ±15V, RG = 5,6Ω, T vj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 150A, VCE = 600V VGE = ±15V, RG = 5,6Ω, T vj = 25°C td,off VGE = ±15V, RG = 5,6Ω, T vj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 150A, VCE = 600V VGE = ±15V, RG = 5,6Ω, T vj = 25°C tf VGE = ±15V, RG = 5,6Ω, T vj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 150A, VCE = 600V, VGE = 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 150A, VCE = 600V, VGE = 15V Kurzschlußverhalten SC Data RG = 5,6Ω, T vj = 125°C, LS = 80nH RG = 5,6Ω, T vj = 125°C, LS = 80nH tP ≤ 10µsec, V GE ≤ 15V, RG = 5,6Ω T Vj≤125°C, VCC=720V, VCEmax=VCES -LsCE ·dI/dt Modulinduktivität stray inductance module Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage IF = 150A, VGE = 0V, Tvj = 25°C Rückstromspitze peak reverse recovery current IF = 150A, - diF/dt = 2500A/µsec VF IF = 150A, VGE = 0V, Tvj = 125°C VR = 600V, VGE = -15V, Tvj = 25°C IRM VR = 600V, VGE = -15V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 150A, - diF/dt = 2500A/µsec VR = 600V, VGE = -15V, Tvj = 25°C Qr VR = 600V, VGE = -15V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 150A, - diF/dt = 2500A/µsec VR = 600V, VGE = -15V, Tvj = 25°C VR = 600V, VGE = -15V, Tvj = 125°C 2(8) Erec Datenblatt_BSM150GXR120DN2.xls Technische Information / Technical Information IGBT-Module IGBT-Module BSM 150 GXR 120 DN2 Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,12 K/W - - 0,28 K/W RthCK - - 0,012 K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature T vj - - 150 °C Betriebstemperatur operation temperature T op -40 - 125 °C Lagertemperatur storage temperature T stg -40 - 125 °C Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Zweig / per arm dPaste ≤ 50µm / d grease ≤ 50µm RthJC Diode/Diode, DC Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation AlN Kriechstrecke creepage distance 20 mm Luftstrecke clearance 11 mm CTI comperative tracking index 225 M1 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque terminals M4 3 6 M2 Nm terminals M8 Gewicht weight Nm Nm G 300 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) Datenblatt_BSM150GXR120DN2.xls Technische Information / Technical Information IGBT-Module IGBT-Module BSM 150 GXR 120 DN2 Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) VGE = 15V 300 270 Tj = 25°C 240 Tj = 125°C IC [A] 210 180 150 120 90 60 30 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 4,0 4,5 5,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) Tvj = 125°C 300 270 VGE = 17V 240 VGE = 15V VGE = 13V 210 VGE = 11V IC [A] VGE = 9V 180 VGE = 7V 150 120 90 60 30 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] 4(8) Datenblatt_BSM150GXR120DN2.xls Technische Information / Technical Information IGBT-Module IGBT-Mod BSM 150 GXR 120 DN2 Übertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 300 270 Tj = 25°C 240 Tj = 125°C IC [A] 210 180 150 120 90 60 30 0 0 1 2 3 4 5 6 7 8 9 10 11 12 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 300 270 Tj = 25°C 240 Tj = 125°C IF [A] 210 180 150 120 90 60 30 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VF [V] 5(8) Datenblatt_BSM150GXR120DN2.xls Technische Information / Technical Information IGBT-Module IGBT-Module BSM 150 GXR 120 DN2 Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) Rgon = Rgoff = 5,6 Ω, VCE = 600V, Tj = 125°C 70 Eoff 60 Eon Erec E [mJ] 50 40 30 20 10 0 0 30 60 90 120 150 180 210 240 270 300 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) IC = 150A , VCE = 600V , Tj = 125°C 60 Eoff 50 Eon Erec E [mJ] 40 30 20 10 0 0 4 8 12 16 20 24 RG [Ω] 6(8) Datenblatt_BSM150GXR120DN2.xls Technische Information / Technical Information IGBT-Module IGBT-Module BSM 150 GXR 120 DN2 Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) 1 ZthJC [K / W] 0,1 Zth:Diode Zth:IGBT 0,01 0,001 0,001 0,01 0,1 1 10 t [sec] i ri [K/kW] τi [sec] ri [K/kW] τi [sec] 3 4 5 6 : IGBT 0,00001 1 0,04631 2 0,05365 0,01216 0,00254 0,00528 : IGBT 277,948 0,07518 0,0411 0,01764 0,00262 0,00056 : Diode 0,00001 0,15399 0,10332 0,00912 0,02163 0 : Diode 277,948 0,06179 0,02053 0,01968 0,00176 0 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) Rg = 5,6 Ohm, T vj= 125°C 400 350 IC [A] 300 250 IC,Modul 200 IC,Chip 150 100 50 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7 (8) Datenblatt_BSM150GXR120DN2.xls Technische Information / technical information IGBT-Module IGBT-Modules BSM150GXR120DN2 Pin 16 and 18 are not connected. All gate pin's (1,3,5,7,9,11) and all auxiliary emitter pin's (2,4,6,8,10,12) must be connected ! 8 (8) Datenblatt_BSM150GXR120DN2.xls