PROFET® BTS 442 D2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • CMOS diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection2) • Electrostatic discharge (ESD) protection Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 63 V 4.5 ... 42 V 18 mΩ 21 A 70 A TO-220AB/5 5 5 5 1 1 1 SMD Straight leads Standard Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. R bb Voltage Overvoltage Current Gate source protection limit protection + V bb 3 V Logic 2 Voltage Charge pump sensor Level shifter Limit for unclamped ind. loads Rectifier IN OUT 5 Temperature sensor Open load ESD 4 Logic Load detection ST Short circuit detection GND PROFET 1 Signal GND 1) 2) Load GND No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Infineon Technologies AG 1 22.03.99 PROFET® BTS 442 D2 Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT (Load, L) O Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, Tj=150 °C: single pulse Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Symbol Vbb VLoad dump3) Values IL Tj Tstg Ptot self-limited -40 ...+150 -55 ...+150 167 A °C 2.1 2.0 J kV -0.5 ... +6 ±5.0 ±5.0 V mA ≤ 0.75 ≤ 75 ≤ tbd K/W EAS VESD VIN IIN IST 63 80 Unit V V W see internal circuit diagrams page 6... Thermal resistance 3) 4) chip - case: junction - ambient (free air): SMD version, device on pcb 4): RthJC RthJA VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Infineon Technologies AG 2 22.03.99 PROFET® BTS 442 D2 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 5 A Tj=25 °C: RON Tj=150 °C: IL(ISO) Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150°C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C Operating Parameters Operating voltage 5) Tj =-40...+150°C: Undervoltage shutdown Tj =-40...+150°C: Undervoltage restart Tj =-40...+150°C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150°C: Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: 6 ) Overvoltage protection Tj =-40°C: Ibb=40 mA Tj =25...+150°C: Standby current (pin 3) Tj=-40...+25°C: VIN=0, IST=0, Tj=150°C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1) 7), VIN=5 V 5) 6) 7) -- 15 18 mΩ 17 28 21 35 -- A -- -- 1 mA ton toff 100 10 --- 350 130 µs dV /dton 0.2 -- 2 V/µs -dV/dtoff 0.4 -- 5 V/µs Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) 4.5 2.4 --- ---6.5 42 4.5 4.5 7.5 V V V V ∆Vbb(under) -- 0.2 -- V Vbb(over) Vbb(o rst) ∆Vbb(over) Vbb(AZ) --0.2 -67 12 18 6 52 ---- V V V V 25 60 -- µA IL(off) 42 42 -60 63 ---- IGND -- 1.1 -- mA IL(GNDhigh) Ibb(off) µA At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST, if IST > 0, add IIN, if VIN>5.5 V Infineon Technologies AG 3 22.03.99 PROFET® BTS 442 D2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Protection Functions Initial peak short circuit current limit (pin 3 to 5) 8), IL(SCp) ( max 400 µs if VON > VON(SC) ) Tj =-40°C: Tj =25°C: =+150°C: Tj Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150°C: td(SC) Values min typ max Unit --45 -95 -- 140 --- A 30 70 -- A 80 -- 400 µs VON(CL) -- 58 -- V VON(SC) Tjt ∆Tjt EAS ELoad12 ELoad24 -150 --- 8.3 -10 -- ---2.1 1.7 1.2 V °C K J --- -120 32 -- V Ω 2 2 --- 1900 1500 mA min value valid only, if input "low" time exceeds 30 µs Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation 9), Tj Start = 150 °C, single pulse Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 10) Integrated resistor in Vbb line Diagnostic Characteristics Open load detection current (on-condition) 8) -Vbb Rbb Tj=-40 °C: IL (OL) Tj=25..150°C: Short circuit current limit for max. duration of td(SC) max=400 µs, prior to shutdown While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx. VON(CL) 2 EAS= 1/2 * L * IL * ( ), see diagram page 8 VON(CL) - Vbb 10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 9) Infineon Technologies AG 4 22.03.99 PROFET® BTS 442 D2 Parameter and Conditions Symbol Values min typ max VIN(T+) 1.5 -- 2.4 V VIN(T-) 1.0 -- -- V -1 0.5 -- -30 V µA at Tj = 25 °C, Vbb = 12 V unless otherwise specified Input and Status Feedback11) Input turn-on threshold voltage Tj =-40..+150°C: Input turn-off threshold voltage Tj =-40..+150°C: Unit Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V ∆ VIN(T) IIN(off) On state input current (pin 2), VIN = 3.5 V IIN(on) 10 25 50 µA Status invalid after positive input slope (short circuit) Tj=-40 ... +150°C: Status invalid after positive input slope Tj=-40 ... +150°C: (open load) Status output (CMOS) Tj =-40...+150°C, IST= - 50 µA: Tj =-40...+150°C, IST = +1.6 mA: Max. status current for current source (out): valid status output, current sink (in) : Tj =-40...+150°C td(ST SC) 80 200 400 µs td(ST) 350 -- 1600 µs VST(high)12) VST(low) -IST +IST13) 4.4 ---- 5.1 ---- 6.5 0.4 0.25 1.6 V mA 11) If a ground resistor RGND is used, add the voltage drop across this resistor. VSt high ≈ Vbb during undervoltage shutdown 13) No current sink capability during undervoltage shutdown 12) Infineon Technologies AG 5 22.03.99 PROFET® BTS 442 D2 Truth Table Input- Output level level 442 D2 442 E2 L H L H L H L H L H L H L H L H H H H L H L H H (L15)) L L L16) L16) L L H H H L H L H H (L15)) L L H H H H Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage Status 14) H L L H H L L L L L L L = "Low" Level H = "High" Level Terms Status output Ibb I IN 2 IL V VST IN OUT PROFET 4 Logic Vbb IN I ST V V 3 ST VON 5 ST GND 1 bb R GND IGND VOUT ESDZD Zener diode: 6.1 V typ., max 5 mA, VLogic 5 V typ, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). GND Input circuit (ESD protection) Short Circuit detection Fault Condition: VON > 8.3 V typ.; IN high R IN I + V bb ESDZDI1 ZDI2 I I V ON GND OUT ZDI1 6.1 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). 14) 15) 16) Logic unit Short circuit detection Power Transistor off, high impedance Low resistance short Vbb to output may be detected by no-load-detection No current sink capability during undervoltage shutdown Infineon Technologies AG 6 22.03.99 PROFET® BTS 442 D2 Inductive and overvoltage output clamp GND disconnect + V bb V 3 Z V ON 2 IN Vbb PROFET OUT 5 OUT GND 4 V VON clamped to 58 V typ. V bb IN V ST GND 1 ST V GND Overvolt. and reverse batt. protection Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. + V bb V R IN Z GND disconnect with GND pull up R bb IN 3 Logic V R ST ST 2 OUT IN Vbb PROFET GND OUT PROFET 4 5 ST GND R GND 1 Signal GND Rbb = 120 Ω typ., VZ +Rbb*40 mA = 67 V typ., add RGND, RIN, RST for extended protection V V bb V IN ST V GND Any kind of load. If V GND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high Vbb disconnect with charged inductive load + V bb 3 high 2 VON ON 4 Open load detection OUT 5 ST GND 1 V Infineon Technologies AG Vbb PROFET OUT Logic unit IN 7 bb 22.03.99 PROFET® BTS 442 D2 Inductive Load switch-off energy dissipation 3 high 2 IN E AS PROFET 4 E bb Vbb OUT 5 ST IN GND 1 PROFET = V bb ELoad Vbb ST OUT EL GND ER Energy dissipated in PROFET EAS = Ebb + EL - ER. 2 ELoad < EL, EL = 1/2 * L * I L Infineon Technologies AG 8 22.03.99 PROFET® BTS 442 D2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version BTS 442D2 442E2 Overtemperature protection Tj >150 °C, latch function 17)18) Tj >150 °C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ.17) (when first turned on after approx. 200 µs) D E X X X X X X Undervoltage shutdown with auto restart X X Overvoltage shutdown with auto restart X X overtemperature X X short circuit to GND X X -19) -19) open load X X undervoltage X - overvoltage X - Open load detection in OFF-state with sensing current 30 µA typ. in ON-state with sensing voltage drop across power transistor Status feedback for short to Vbb Status output type CMOS X X Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) 17) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 18) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 19) Low resistance short V to output may be detected by no-load-detection bb Infineon Technologies AG 9 22.03.99 PROFET® BTS 442 D2 Timing diagrams Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: IN IN t d(bb IN) V bb td(ST) ST *) V OUT V OUT A ST CMOS I L IL(OL) t A t in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 µs *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp, Figure 3a: Turn on into short circuit, IN IN ST ST V OUT V OUT td(SC) I L I L t t td(SC) approx. 200µs if Vbb - VOUT > 8.3 V typ. Infineon Technologies AG 10 22.03.99 PROFET® BTS 442 D2 Figure 3b: Turn on into overload, Figure 4a: Overtemperature, Reset if (IN=low) and (Tj<Tjt) IN IN IL I L(SCp) I L(SCr) ST V ST OUT T J t t Heating up may require several milliseconds, Vbb - VOUT < 8.3 V typ. *) ST goes high , when VIN=low and Tj<Tjt , Vbb - VOUT < 8.3 V typ. Figure 5a: Open load: detection in ON-state, turn on/off to open load Figure 3c: Short circuit while on: IN IN ST t d(ST) ST V OUT V OUT I L IL open **) t t **) current peak approx. 20 µs Infineon Technologies AG 11 22.03.99 PROFET® BTS 442 D2 Figure 5b: Open load: detection in ON-state, open load occurs in on-state Figure 6b: Undervoltage restart of charge pump VON [V] VON(CL) V on IN off t d(ST OL1) t ST d(ST OL2) V V off OUT V V bb(u rst) normal I open V normal L V bb(over) bb(o rst) bb(u cp) bb(under) on V bb t Vbb [V] td(ST OL1) = tbd µs typ., t d(ST OL2) = tbd µs typ charge pump starts at Vbb(ucp) =6.5 V typ. Figure 7a: Overvoltage: Figure 6a: Undervoltage: IN IN Vbb Vbb V bb(under) VON(CL) Vbb(over) V bb(o rst) Vbb(u cp) Vbb(u rst) V OUT V OUT ST ST CMOS t t Infineon Technologies AG 12 22.03.99 PROFET® BTS 442 D2 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS 442 D2 Ordering code TO-220AB/5, Option E3043 Ordering code BTS 442 D2 E3043 Q67060-S6205-A2 Q67060-S6205-A3 SMD TO-220AB/5, Opt. E3062 Ordering code BTS442D2 E3062A T&R: Infineon Technologies AG 13 Q67060-S6205-A4 22.03.99 PROFET® BTS 442 D2 Edition 22.03.99 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2000. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Infineon Technologies AG 14 22.03.99