ETC BZX79-C33/A52R

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BZX79 series
Voltage regulator diodes
Product specification
Supersedes data of 1996 Apr 26
1999 May 25
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
FEATURES
DESCRIPTION
• Total power dissipation:
max. 500 mW
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages. The diodes are available in the normalized E24
±1% (BZX79-A), ±2% (BZX79-B), and approx. ±5% (BZX79-C) tolerance
range. The series consists of 37 types with nominal working voltages from
2.4 to 75 V.
• Three tolerance series: ±1%, ±2%,
and approx. ±5%
• Working voltage range:
nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power
dissipation: max. 40 W.
handbook, halfpage
k
a
MAM239
APPLICATIONS
• Low voltage stabilizers or voltage
references.
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
IF
continuous forward current
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
Ptot
total power dissipation
Tamb = 50 °C; note 1
−
400
mW
Tamb = 50 °C; note 2
−
500
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
Tj = 25 °C prior to surge; see Fig.3
−
40
W
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−65
+200
°C
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
1999 May 25
2
mA
see Tables
1, 2, 3 and 4
Notes
2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm.
250
UNIT
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
ELECTRICAL CHARACTERISTICS
Total BZX79-A, B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
MAX.
UNIT
IF = 10 mA; see Fig.4
0.9
V
BZX79-A/B/C2V4
VR = 1 V
50
µA
BZX79-A/B/C2V7
VR = 1 V
20
µA
BZX79-A/B/C3V0
VR = 1 V
10
µA
BZX79-A/B/C3V3
VR = 1 V
5
µA
BZX79-A/B/C3V6
VR = 1 V
5
µA
BZX79-A/B/C3V9
VR = 1 V
3
µA
BZX79-A/B/C4V3
VR = 1 V
3
µA
BZX79-A/B/C4V7
VR = 2 V
3
µA
BZX79-A/B/C5V1
VR = 2 V
2
µA
BZX79-A/B/C5V6
VR = 2 V
1
µA
BZX79-A/B/C6V2
VR = 4 V
3
µA
BZX79-A/B/C6V8
VR = 4 V
2
µA
BZX79-A/B/C7V5
VR = 5 V
1
µA
BZX79-A/B/C8V2
VR = 5 V
700
nA
BZX79-A/B/C9V1
VR = 6 V
500
nA
BZX79-A/B/C10
VR = 7 V
200
nA
BZX79-A/B/C11
VR = 8 V
100
nA
BZX79-A/B/C12
VR = 8 V
100
nA
BZX79-A/B/C13
VR = 8 V
100
nA
BZX79-A/B/C15 to 75
VR = 0.7VZnom
50
nA
VF
forward voltage
IR
reverse current
1999 May 25
CONDITIONS
3
DIFFERENTIAL RESISTANCE
rdif (Ω)
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 5 and 6)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 µs; Tamb = 25 °C
MAX.
MAX.
4
MIN.
MAX.
MIN.
MAX.
TYP.
MAX.
TYP.
MAX.
MIN.
TYP. MAX.
2V4
2.37
2.43
2.35
2.45
275
600
70
100
−3.5
−1.6
0
450
6.0
2V7
2.67
2.73
2.65
2.75
300
600
75
100
−3.5
−2.0
0
450
6.0
3V0
2.97
3.03
2.94
3.06
325
600
80
95
−3.5
−2.1
0
450
6.0
3V3
3.26
3.34
3.23
3.37
350
600
85
95
−3.5
−2.4
0
450
6.0
3V6
3.56
3.64
3.53
3.67
375
600
85
90
−3.5
−2.4
0
450
6.0
3V9
3.86
3.94
3.82
3.98
400
600
85
90
−3.5
−2.5
0
450
6.0
4V3
4.25
4.35
4.21
4.39
410
600
80
90
−3.5
−2.5
0
450
6.0
4V7
4.65
4.75
4.61
4.79
425
500
50
80
−3.5
−1.4
0.2
300
6.0
5V1
5.04
5.16
5.00
5.20
400
480
40
60
−2.7
−0.8
1.2
300
6.0
5V6
5.54
5.66
5.49
5.71
80
400
15
40
−2.0
1.2
2.5
300
6.0
6V2
6.13
6.27
6.08
6.32
40
150
6
10
0.4
2.3
3.7
200
6.0
6V8
6.73
6.87
6.66
6.94
30
80
6
15
1.2
3.0
4.5
200
6.0
7V5
7.42
7.58
7.35
7.65
30
80
6
15
2.5
4.0
5.3
150
4.0
8V2
8.11
8.29
8.04
8.36
40
80
6
15
3.2
4.6
6.2
150
4.0
9V1
9.00
9.20
8.92
9.28
40
100
6
15
3.8
5.5
7.0
150
3.0
10
9.90
10.10
9.80
10.20
50
150
8
20
4.5
6.4
8.0
90
3.0
11
10.89
11.11
10.80
11.20
50
150
10
20
5.4
7.4
9.0
85
2.5
12
11.88
12.12
11.80
12.20
50
150
10
25
6.0
8.4
10.0
85
2.5
13
12.87
13.13
12.70
13.30
50
170
10
30
7.0
9.4
11.0
80
2.5
15
14.85
15.15
14.70
15.30
50
200
10
30
9.2
11.4
13.0
75
2.0
16
15.84
16.16
15.70
16.30
50
200
10
40
10.4
12.4
14.0
75
1.5
18
17.82
18.18
17.60
18.40
50
225
10
45
12.4
14.4
16.0
70
1.5
20
19.80
20.20
19.60
20.40
60
225
15
55
14.4
16.4
18.0
60
1.5
22
21.78
22.22
21.60
22.40
60
250
20
55
16.4
18.4
20.0
60
1.25
24
23.76
24.24
23.50
24.50
60
250
25
70
18.4
20.4
22.0
55
1.25
at IZtest = 1 mA
at IZtest = 5 mA
Product specification
Tol. ±2% (B)
BZX79 series
Tol. ±1% (A)
Philips Semiconductors
BZX79A or B
XXX
WORKING VOLTAGE
VZ (V)
at IZtest = 5 mA
Voltage regulator diodes
1999 May 25
Table 1 Per type BZX79-A/B2V4 to A/B24
Tj = 25 °C unless otherwise specified.
DIFFERENTIAL RESISTANCE
rdif (Ω)
5
Tol. ±1% (A)
Tol. ±2% (B)
MIN.
MAX.
MIN.
MAX.
TYP.
MAX.
TYP.
27
26.73
27.27
26.50
27.50
65
300
25
30
29.70
30.30
29.40
30.60
70
300
30
33
32.67
33.33
32.30
33.70
75
325
36
35.64
36.36
35.30
36.70
80
39
38.61
39.39
38.20
39.80
43
42.57
43.43
42.10
43.90
47
46.53
47.47
46.10
47.90
51
50.49
51.51
50.00
56
55.44
56.56
54.90
62
61.38
62.62
68
67.32
75
74.25
at IZtest = 0.5 mA
at IZtest = 2 mA
MAX.
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see Figs 5 and 6)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 µs; Tamb = 25 °C
MAX.
MAX.
MIN.
TYP. MAX.
80
21.4
23.4
25.3
50
1.0
80
24.4
26.6
29.4
50
1.0
35
80
27.4
29.7
33.4
45
0.9
350
35
90
30.4
33.0
37.4
45
0.8
80
350
40
130
33.4
36.4
41.2
45
0.7
85
375
45
150
37.6
41.2
46.6
40
0.6
85
375
50
170
42.0
46.1
51.8
40
0.5
52.00
90
400
60
180
46.6
51.0
57.2
40
0.4
57.10
100
425
70
200
52.2
57.0
63.8
40
0.3
60.80
63.20
120
450
80
215
58.8
64.4
71.6
35
0.3
68.68
66.60
69.40
150
475
90
240
65.6
71.7
79.8
35
0.25
75.75
73.50
76.50
170
500
95
255
73.4
80.2
88.6
35
0.2
Philips Semiconductors
BZX79A or B
XXX
WORKING VOLTAGE
VZ (V)
at IZtest = 2 mA
Voltage regulator diodes
1999 May 25
Table 2 Per type BZX79-A/B27 to A/B75
Tj = 25 °C unless otherwise specified.
Product specification
BZX79 series
Tol. approx. ±5% (C)
DIFFERENTIAL RESISTANCE
rdif (Ω)
at IZtest = 1 mA
at IZtest = 5 mA
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 5 and 6)
MAX.
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 µs; Tamb = 25 °C
MAX.
MAX.
6
TYP.
MAX.
TYP.
MAX.
MIN.
TYP.
2V4
2.2
2.6
275
600
70
100
−3.5
−1.6
0
450
6.0
2V7
2.5
2.9
300
600
75
100
−3.5
−2.0
0
450
6.0
3V0
2.8
3.2
325
600
80
95
−3.5
−2.1
0
450
6.0
3V3
3.1
3.5
350
600
85
95
−3.5
−2.4
0
450
6.0
3V6
3.4
3.8
375
600
85
90
−3.5
−2.4
0
450
6.0
3V9
3.7
4.1
400
600
85
90
−3.5
−2.5
0
450
6.0
4V3
4.0
4.6
410
600
80
90
−3.5
−2.5
0
450
6.0
4V7
4.4
5.0
425
500
50
80
−3.5
−1.4
0.2
300
6.0
5V1
4.8
5.4
400
480
40
60
−2.7
−0.8
1.2
300
6.0
5V6
5.2
6.0
80
400
15
40
−2.0
1.2
2.5
300
6.0
6V2
5.8
6.6
40
150
6
10
0.4
2.3
3.7
200
6.0
6V8
6.4
7.2
30
80
6
15
1.2
3.0
4.5
200
6.0
7V5
7.0
7.9
30
80
6
15
2.5
4.0
5.3
150
4.0
8V2
7.7
8.7
40
80
6
15
3.2
4.6
6.2
150
4.0
9V1
8.5
9.6
40
100
6
15
3.8
5.5
7.0
150
3.0
10
9.4
10.6
50
150
8
20
4.5
6.4
8.0
90
3.0
11
10.4
11.6
50
150
10
20
5.4
7.4
9.0
85
2.5
12
11.4
12.7
50
150
10
25
6.0
8.4
10.0
85
2.5
13
12.4
14.1
50
170
10
30
7.0
9.4
11.0
80
2.5
15
13.8
15.6
50
200
10
30
9.2
11.4
13.0
75
2.0
16
15.3
17.1
50
200
10
40
10.4
12.4
14.0
75
1.5
18
16.8
19.1
50
225
10
45
12.4
14.4
16.0
70
1.5
20
18.8
21.2
60
225
15
55
14.4
16.4
18.0
60
1.5
22
20.8
23.3
60
250
20
55
16.4
18.4
20.0
60
1.25
24
22.8
25.6
60
250
25
70
18.4
20.4
22.0
55
1.25
Product specification
MAX.
BZX79 series
MIN.
Philips Semiconductors
BZX79
-C
XXX
WORKING VOLTAGE
VZ (V)
at IZtest = 5 mA
Voltage regulator diodes
1999 May 25
Table 3 Per type BZX79-C2V4 to C24
Tj = 25 °C unless otherwise specified.
Tol.approx. ±5% (C)
DIFFERENTIAL RESISTANCE
rdif (Ω)
at IZtest = 0.5 mA
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see Figs 5 and 6)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 µs; Tamb = 25 °C
MAX.
at IZtest = 2 mA
7
MIN.
MAX.
TYP.
MAX.
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
27
25.1
28.9
65
300
25
80
21.4
23.4
25.3
50
1.0
30
28.0
32.0
70
300
30
80
24.4
26.6
29.4
50
1.0
33
31.0
35.0
75
325
35
80
27.4
29.7
33.4
45
0.9
36
34.0
38.0
80
350
35
90
30.4
33.0
37.4
45
0.8
39
37.0
41.0
80
350
40
130
33.4
36.4
41.2
45
0.7
43
40.0
46.0
85
375
45
150
37.6
41.2
46.6
40
0.6
47
44.0
50.0
85
375
50
170
42.0
46.1
51.8
40
0.5
51
48.0
54.0
90
400
60
180
46.6
51.0
57.2
40
0.4
56
52.0
60.0
100
425
70
200
52.2
57.0
63.8
40
0.3
62
58.0
66.0
120
450
80
215
58.8
64.4
71.6
35
0.3
68
64.0
72.0
150
475
90
240
65.6
71.7
79.8
35
0.25
75
70.0
79.0
170
500
95
255
73.4
80.2
88.6
35
0.2
Philips Semiconductors
BZX79
-C
XXX
WORKING
VOLTAGE
VZ (V)
at IZtest = 2 mA
Voltage regulator diodes
1999 May 25
Table 4 Per type BZX79-C27 to C75
Tj = 25 °C unless otherwise specified.
Product specification
BZX79 series
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point lead length 8 mm.
300
K/W
Rth j-a
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
380
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
GRAPHICAL DATA
MBG930
103
handbook, full pagewidth
δ=1
Rth j-a
0.75
0.50
0.33
0.20
(K/W)
102
0.10
0.05
0.02
0.01
≤0.001
10
tp
δ=
T
1
10−1
1
102
10
103
104
8
T
tp (ms)
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
1999 May 25
tp
105
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
MBG781
MBG801
103
handbook, halfpage
300
handbook, halfpage
PZSM
(W)
IF
(mA)
102
200
(1)
10
100
(2)
1
10−1
1
duration (ms)
0
0.6
10
0.8
VF (V)
1.0
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.3
Maximum permissible non-repetitive
peak reverse power dissipation
versus duration.
Fig.4
Forward current as a function of forward
voltage; typical values.
MBG783
MBG782
0
10
handbook, halfpage
handbook, halfpage
12
SZ
(mV/K)
SZ
(mV/K)
4V3
11
10
−1
9V1
5
3V9
8V2
7V5
6V8
3V6
−2
6V2
5V6
5V1
0
3V3
4V7
3V0
2V4
2V7
−3
0
20
40
IZ (mA)
−5
60
BZX79-A/B/C2V4 to A/B/C4V3.
Tj = 25 to 150 °C.
Fig.5
4
8
12
16
IZ (mA)
20
BZX79-A/B/C4V7 to A/B/C12.
Tj = 25 to 150 °C.
Temperature coefficient as a function of
working current; typical values.
1999 May 25
0
Fig.6
9
Temperature coefficient as a function of
working current; typical values.
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD27
(1)
b
D
G1
L
L
DIMENSIONS (mm are the original dimensions)
UNIT
b
max.
D
max.
G1
max.
L
min.
mm
0.56
1.85
4.25
25.4
0
1
2 mm
scale
Note
1. The marking band indicates the cathode.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
EIAJ
SOD27
A24
DO-35
SC-40
EUROPEAN
PROJECTION
ISSUE DATE
97-06-09
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 25
10
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
NOTES
1999 May 25
11
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Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA 65
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/02/pp12
Date of release: 1999 May 25
Document order number:
9397 750 05894